Issued Patents All Time
Showing 351–375 of 552 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 9613958 | Spacer chamfering gate stack scheme | Hyun-Jin Cho, Hui Zang | 2017-04-04 |
| 9607900 | Method and structure to fabricate closely packed hybrid nanowires at scaled pitch | Veeraraghavan S. Basker, Zuoguang Liu, Chun-Chen Yeh | 2017-03-28 |
| 9608099 | Nanowire semiconductor device | Wilfried Haensch, Effendi Leobandung | 2017-03-28 |
| 9608069 | Self aligned epitaxial based punch through control | Veeraraghavan S. Basker, Zuoguang Liu, Chun-Chen Yeh | 2017-03-28 |
| 9607903 | Method for forming field effect transistors | Rama Kambhampati, Junli Wang, Ruilong Xie | 2017-03-28 |
| 9601621 | Semiconductor device including dual spacer and uniform epitaxial buffer interface of embedded SiGe source/drain | Veeraraghavan S. Basker, Zuoguang Liu, Chun-Chen Yeh | 2017-03-21 |
| 9595597 | Semiconductor device including dual spacer and uniform epitaxial buffer interface of embedded SiGe source/drain | Veeraraghavan S. Basker, Zuoguang Liu, Chun-Chen Yeh | 2017-03-14 |
| 9595599 | Dielectric isolated SiGe fin on bulk substrate | Huiming Bu, Shogo Mochizuki | 2017-03-14 |
| 9595578 | Undercut insulating regions for silicon-on-insulator device | Kangguo Cheng, Bruce B. Doris, Balasubramanian Pranatharthiharan, Shom Ponoth, Theodorus E. Standaert | 2017-03-14 |
| 9589833 | Preventing leakage inside air-gap spacer during contact formation | Kangguo Cheng, Ruilong Xie | 2017-03-07 |
| 9589851 | Dipole-based contact structure to reduce metal-semiconductor contact resistance in MOSFETs | Huiming Bu, Hui-feng Li, Vijay Narayanan, Hiroaki Niimi | 2017-03-07 |
| 9583563 | Conformal doping for punch through stopper in fin field effect transistor devices | Huiming Bu, Sivananda K. Kanakasabapathy, Fee Li Lie | 2017-02-28 |
| 9577096 | Salicide formation on replacement metal gate finFet devices | Effendi Leobandung, Soon-Cheon Seo, Chun-Chen Yeh | 2017-02-21 |
| 9576956 | Method and structure of forming controllable unmerged epitaxial material | Xiuyu Cai, Kangguo Cheng, Ali Khakifirooz, Ruilong Xie | 2017-02-21 |
| 9570590 | Selective oxidation of buried silicon-germanium to form tensile strained silicon FinFETs | Bruce B. Doris, Alexander Reznicek, Joshua M. Rubin | 2017-02-14 |
| 9570554 | Robust gate spacer for semiconductor devices | Effendi Leobandung | 2017-02-14 |
| 9564440 | Spacer chamfering gate stack scheme | Hyun-Jin Cho, Hui Zang | 2017-02-07 |
| 9564358 | Forming reliable contacts on tight semiconductor pitch | Xiuyu Cai, Kangguo Cheng, Ali Khakifirooz, Ruilong Xie | 2017-02-07 |
| 9558991 | Formation of isolation surrounding well implantation | Kangguo Cheng, Shom Ponoth, Theodorus E. Standaert | 2017-01-31 |
| 9559191 | Punch through stopper in bulk finFET device | Veeraraghavan S. Basker, Zuoguang Liu, Chun-Chen Yeh | 2017-01-31 |
| 9552988 | Tone inverted directed self-assembly (DSA) fin patterning | Hong He, Chi-Chun Liu, Alexander Reznicek, Chiahsun Tseng | 2017-01-24 |
| 9548388 | Forming field effect transistor device spacers | Rama Kambhampati, Junli Wang, Ruilong Xie | 2017-01-17 |
| 9548379 | Asymmetric multi-gate FinFET | Veeraraghavan S. Basker, Andres Bryant, Huiming Bu, Sivananda K. Kanakasabapathy | 2017-01-17 |
| 9548306 | Method of forming a complementary metal oxide semiconductor structure with N-type and P-type field effect transistors having symmetric source/drain junctions and optional dual silicides | Veeraraghavan S. Basker, Andres Bryant | 2017-01-17 |
| 9548250 | Semiconductor device including self-aligned gate structure and improved gate spacer topography | Veeraraghavan S. Basker | 2017-01-17 |