Issued Patents All Time
Showing 251–275 of 605 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 10734579 | Protuberant contacts for resistive switching devices | Chih-Chao Yang, Lawrence A. Clevenger | 2020-08-04 |
| 10734479 | FinFET CMOS with asymmetric gate threshold voltage | Alexander Reznicek, Choonghyun Lee, Jingyun Zhang, Pouya Hashemi | 2020-08-04 |
| 10734475 | Stacked MIM capacitors with self-aligned contact to reduce via enclosure | Robert A. Groves, Hemanth Jagannathan, Lawrence A. Clevenger, Griselda Bonilla | 2020-08-04 |
| 10734447 | Field-effect transistor unit cells for neural networks with differential weights | Pouya Hashemi, Alexander Reznicek, Choonghyun Lee, Jingyun Zhang | 2020-08-04 |
| 10734286 | Multiple dielectrics for gate-all-around transistors | Jingyun Zhang, Alexander Reznicek, Choonghyun Lee, Pouya Hashemi | 2020-08-04 |
| 10727407 | Resistive switching memory with replacement metal electrode | Hiroyuki Miyazoe, Seyoung Kim, Vijay Narayanan | 2020-07-28 |
| 10720502 | Vertical transistors having a layer of charge carriers in the extension region for reduced extension region resistance | Pouya Hashemi, Choonghyun Lee, Alexander Reznicek, Jingyun Zhang | 2020-07-21 |
| 10707304 | Vertically stacked nFET and pFET with dual work function | Alexander Reznicek, Jingyun Zhang, Choonghyun Lee, Pouya Hashemi | 2020-07-07 |
| 10700064 | Multi-threshold voltage gate-all-around field-effect transistor devices with common gates | Jingyun Zhang, Choonghyun Lee | 2020-06-30 |
| 10699967 | Co-integration of high carrier mobility PFET and NFET devices on the same substrate using low temperature condensation | Pouya Hashemi, Choonghyun Lee | 2020-06-30 |
| 10700129 | Vertical array of resistive switching devices having a tunable oxygen vacancy concentration | Choonghyun Lee | 2020-06-30 |
| 10692873 | Gate formation scheme for nanosheet transistors having different work function metals and different nanosheet width dimensions | Ruqiang Bao, Pouya Hashemi, Choonghyun Lee | 2020-06-23 |
| 10692866 | Co-integrated channel and gate formation scheme for nanosheet transistors having separately tuned threshold voltages | Jingyun Zhang, Choonghyun Lee, Pouya Hashemi, Alexander Reznicek | 2020-06-23 |
| 10686076 | Germanium condensation for replacement metal gate devices with silicon germanium channel | Pouya Hashemi, Choonghyun Lee | 2020-06-16 |
| 10686040 | Artificial synapse with hafnium oxide-based ferroelectric layer in CMOS front-end | Martin M. Frank, Xiao Sun, Jin-Ping Han, Vijay Narayanan | 2020-06-16 |
| 10686039 | Artificial synapse with hafnium oxide-based ferroelectric layer in CMOS front-end | Martin M. Frank, Xiao Sun, Jin-Ping Han, Vijay Narayanan | 2020-06-16 |
| 10686014 | Semiconductor memory device having a vertical active region | Juntao Li, Kangguo Cheng, Dexin Kong | 2020-06-16 |
| 10672881 | Ferroelectric gate dielectric with scaled interfacial layer for steep sub-threshold slope field-effect transistor | Martin M. Frank, Vijay Narayanan | 2020-06-02 |
| 10672671 | Distinct gate stacks for III-V-based CMOS circuits comprising a channel cap | Martin M. Frank, Renee T. Mo, Vijay Narayanan | 2020-06-02 |
| 10672984 | Resistive memory crossbar array compatible with Cu metallization | Michael Rizzolo, Lawrence A. Clevenger, Shyng-Tsong Chen | 2020-06-02 |
| 10672980 | Resistive memory crossbar array with top electrode inner spacers | Hiroyuki Miyazoe, Iqbal Rashid Saraf, Shyng-Tsong Chen | 2020-06-02 |
| 10672891 | Stacked gate all around MOSFET with symmetric inner spacer formed via sacrificial pure Si anchors | Pouya Hashemi, Choonghyun Lee, Jingyun Zhang | 2020-06-02 |
| 10658590 | Techniques for forming RRAM cells | Kangguo Cheng, Juntao Li, Dexin Kong | 2020-05-19 |
| 10658585 | Dedicated contacts for controlled electroforming of memory cells in resistive random-access memory array | Lawrence A. Clevenger, Chih-Chao Yang, Benjamin D. Briggs | 2020-05-19 |
| 10658583 | Forming RRAM cell structure with filament confinement | Juntao Li, Dexin Kong, Kangguo Cheng | 2020-05-19 |