Issued Patents All Time
Showing 276–300 of 605 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 10658582 | Vertical resistive processing unit with air gap | Pouya Hashemi, Choonghyun Lee | 2020-05-19 |
| 10658462 | Vertically stacked dual channel nanosheet devices | Choonghyun Lee, Jingyun Zhang, Pouya Hashemi, Alexander Reznicek | 2020-05-19 |
| 10658429 | High-density field-enhanced ReRAM integrated with vertical transistors | Pouya Hashemi, Alexander Reznicek | 2020-05-19 |
| 10651123 | High density antifuse co-integrated with vertical FET | Alexander Reznicek, Pouya Hashemi, Miaomiao Wang | 2020-05-12 |
| 10643899 | Gate stack optimization for wide and narrow nanosheet transistor devices | Jingyun Zhang, Choonghyun Lee | 2020-05-05 |
| 10637069 | Carbon sheet, gas diffusion electrode substrate, wound body, and fuel cell | Katsuya Sode, Toru Sugahara | 2020-04-28 |
| 10622466 | Multiple work function nanosheet field-effect transistors with differential interfacial layer thickness | Choonghyun Lee, Jingyun Zhang, Pouya Hashemi | 2020-04-14 |
| 10622355 | Reduction of negative bias temperature instability | Barry P. Linder | 2020-04-14 |
| 10615043 | Formation of pure silicon oxide interfacial layer on silicon-germanium channel field effect transistor device | Pouya Hashemi, Hemanth Jagannathan, Choonghyun Lee, Vijay Narayanan | 2020-04-07 |
| 10608179 | Resistive random access memory with metal fin electrode | Pouya Hashemi, Alexander Reznicek | 2020-03-31 |
| 10607990 | Fabrication of field effect transistors with different threshold voltages through modified channel interfaces | Ruqiang Bao, Hemanth Jagannathan, Choonghyun Lee | 2020-03-31 |
| 10600892 | Integrated ferroelectric capacitor/ field effect transistor structure | Pouya Hashemi, Alexander Reznicek | 2020-03-24 |
| 10600883 | Vertical transport FETs having a gradient threshold voltage | Choonghyun Lee, Jingyun Zhang, Pouya Hashemi, Alexander Reznicek | 2020-03-24 |
| 10593956 | Carbon sheet, gas diffusion electrode substrate and fuel cell | Katsuya Sode, Takashi Chida, Masamichi Utsunomiya, Toru Sugahara | 2020-03-17 |
| 10593729 | Vertical array of resistive switching devices having restricted filament regions and tunable top electrode volume | Robert L. Bruce, Hiroyuki Miyazoe, John Rozen | 2020-03-17 |
| 10593600 | Distinct gate stacks for III-V-based CMOS circuits comprising a channel cap | Martin M. Frank, Renee T. Mo, Vijay Narayanan | 2020-03-17 |
| 10586872 | Formation of wrap-around-contact to reduce contact resistivity | Adra Carr, Jingyun Zhang, Choonghyun Lee, Pouya Hashemi | 2020-03-10 |
| 10580977 | Tightly integrated 1T1R ReRAM for planar technology | Alexander Reznicek, Pouya Hashemi | 2020-03-03 |
| 10580829 | Fabricating a vertical ReRAM array structure having reduced metal resistance | Pouya Hashemi, Choonghyun Lee | 2020-03-03 |
| 10580703 | Multivalent oxide cap for multiple work function gate stacks on high mobility channel materials | Choonghyun Lee, Jingyun Zhang, Pouya Hashemi | 2020-03-03 |
| 10573723 | Vertical transport FETs with asymmetric channel profiles using dipole layers | Choonghyun Lee, Sanghoon Shin, Jingyun Zhang, Pouya Hashemi, Alexander Reznicek | 2020-02-25 |
| 10566435 | Gate stack quality for gate-all-around field-effect transistors | Jingyun Zhang, Choonghyun Lee | 2020-02-18 |
| 10559676 | Vertical FET with differential top spacer | Choonghyun Lee, Jingyun Zhang, Pouya Hashemi | 2020-02-11 |
| 10559625 | RRAM cells in crossbar array architecture | Dexin Kong, Kangguo Cheng, Juntao Li | 2020-02-11 |
| 10553696 | Full air-gap spacers for gate-all-around nanosheet field effect transistors | Pouya Hashemi, Choonghyun Lee, Alexander Reznicek, Jingyun Zhang | 2020-02-04 |