Issued Patents All Time
Showing 26–50 of 94 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 9647119 | Structure and method for tensile and compressive strained silicon germanium with same germanium concentration by single epitaxy step | Qiqing C. Ouyang, Alexander Reznicek, Dominic J. Schepis | 2017-05-09 |
| 9640552 | Multi-height fin field effect transistors | Carl Radens, Sudesh Saroop | 2017-05-02 |
| 9634028 | Metallized junction FinFET structures | Bruce B. Doris, Alexander Reznicek, Joshua M. Rubin | 2017-04-25 |
| 9627410 | Metallized junction FinFET structures | Bruce B. Doris, Alexander Reznicek, Joshua M. Rubin | 2017-04-18 |
| 9627482 | Reduced current leakage semiconductor device | Cheng-Wei Cheng, Young-Hee Kim, Effendi Leobandung, Yanning Sun | 2017-04-18 |
| 9595598 | Semiconductor device including epitaxially formed buried channel region | Jie Deng, Qiqing C. Ouyang, Alexander Reznicek | 2017-03-14 |
| 9590106 | Semiconductor device including epitaxially formed buried channel region | Jie Deng, Qiqing C. Ouyang, Alexander Reznicek | 2017-03-07 |
| 9576806 | FinFET device with vertical silicide on recessed source/drain epitaxy regions | Keith E. Fogel, Qiqing C. Ouyang, Alexander Reznicek | 2017-02-21 |
| 9576085 | Selective importance sampling | Rajiv V. Joshi, Rouwaida N. Kanj | 2017-02-21 |
| 9553166 | Asymmetric III-V MOSFET on silicon substrate | Cheng-Wei Cheng, Effendi Leobandung, Amlan Majumdar, Renee T. Mo, Yanning Sun | 2017-01-24 |
| 9548356 | Shallow trench isolation structures | Bruce B. Doris, Kangguo Cheng, Balasubramanian S. Haran, Ali Khakifirooz, Arvind Kumar +1 more | 2017-01-17 |
| 9530699 | Semiconductor device including gate channel having adjusted threshold voltage | Qiqing C. Ouyang, Alexander Reznicek | 2016-12-27 |
| 9530860 | III-V MOSFETs with halo-doped bottom barrier layer | Chung-Hsun Lin, Amlan Majumdar, Jeffrey W. Sleight | 2016-12-27 |
| 9515165 | III-V field effect transistor (FET) with reduced short channel leakage, integrated circuit (IC) chip and method of manufacture | Cheng-Wei Cheng, Effendi Leobandung, Amlan Majumdar | 2016-12-06 |
| 9502420 | Structure and method for highly strained germanium channel fins for high mobility pFINFETs | Stephen W. Bedell, Lisa F. Edge, Qiqing C. Ouyang, Alexander Reznicek | 2016-11-22 |
| 9502408 | FinFET device including fins having a smaller thickness in a channel region, and a method of manufacturing same | Qiqing C. Ouyang, Alexander Reznicek | 2016-11-22 |
| 9484412 | Strained silicon—germanium integrated circuit with inversion capacitance enhancement and method to fabricate same | Takashi Ando, Pouya Hashemi, Alexander Reznicek | 2016-11-01 |
| 9484359 | MOSFET with work function adjusted metal backgate | Kangguo Cheng, Bruce B. Doris, Ali Khakifirooz | 2016-11-01 |
| 9472553 | High-K gate dielectric and metal gate conductor stack for planar field effect transistors formed on type III-V semiconductor material and silicon germanium semiconductor material | Takashi Ando, Martin M. Frank, Vijay Narayanan | 2016-10-18 |
| 9460243 | Selective importance sampling | Rajiv V. Joshi, Rouwaida N. Kanj | 2016-10-04 |
| 9443963 | SiGe FinFET with improved junction doping control | Qiqing C. Ouyang, Alexander Reznicek | 2016-09-13 |
| 9443940 | Defect reduction with rotated double aspect ratio trapping | Keith E. Fogel, Judson R. Holt, Alexander Reznicek | 2016-09-13 |
| 9443873 | Structure and method for tensile and compressive strained silicon germanium with same germanium concentration by single epitaxy step | Qiqing C. Ouyang, Alexander Reznicek, Dominic J. Schepis | 2016-09-13 |
| 9412865 | Reduced resistance short-channel InGaAs planar MOSFET | Qiqing C. Ouyang, Alexander Reznicek | 2016-08-09 |
| 9397161 | Reduced current leakage semiconductor device | Cheng-Wei Cheng, Young-Hee Kim, Effendi Leobandung, Yanning Sun | 2016-07-19 |