Issued Patents All Time
Showing 76–94 of 94 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 9018714 | Integrated circuit having raised source drains devices with reduced silicide contact resistance and methods to fabricate same | Kangguo Cheng, Bruce B. Doris, Ali Khakifirooz, Christian Lavoie | 2015-04-28 |
| 9018052 | Integrated circuit including DRAM and SRAM/logic | Veeraraghavan S. Basker, Kangguo Cheng, Bruce B. Doris, Terence B. Hook, Ali Khakifirooz +2 more | 2015-04-28 |
| 8994072 | Reduced resistance SiGe FinFET devices and method of forming same | Qiping C. Ouyang, Alexander Reznicek | 2015-03-31 |
| 8993406 | FinFET device having a merged source drain region under contact areas and unmerged fins between contact areas, and a method of manufacturing same | Qiqing C. Ouyang, Alexander Reznicek | 2015-03-31 |
| 8963248 | Semiconductor device having SSOI substrate with relaxed tensile stress | Veeraraghavan S. Basker, Ali Khakifirooz, Alexander Reznicek | 2015-02-24 |
| 8962412 | Integrated circuit having raised source drains devices with reduced silicide contact resistance and methods to fabricate same | Kangguo Cheng, Bruce B. Doris, Ali Khakifirooz, Christian Lavoie | 2015-02-24 |
| 8946010 | Three dimensional FET devices having different device widths | Kangguo Cheng, Bruce B. Doris, Ali Khakifirooz | 2015-02-03 |
| 8946063 | Semiconductor device having SSOI substrate with relaxed tensile stress | Veeraraghavan S. Basker, Ali Khakifirooz, Alexander Reznicek | 2015-02-03 |
| 8895395 | Reduced resistance SiGe FinFET devices and method of forming same | Qiqing C. Ouyang, Alexander Reznicek | 2014-11-25 |
| 8878311 | Integrated circuit having raised source drains devices with reduced silicide contact resistance and methods to fabricate same | Kangguo Cheng, Bruce B. Doris, Ali Khakifirooz, Christian Lavoie | 2014-11-04 |
| 8853040 | Strained thin body CMOS device having vertically raised source/drain stressors with single spacer | Kangguo Cheng, Bruce B. Doris, Ali Khakifirooz, Ghavam G. Shahidi | 2014-10-07 |
| 8815694 | Inducing channel stress in semiconductor-on-insulator devices by base substrate oxidation | Kangguo Cheng, Bruce B. Doris, Balasubramanian S. Haran, Ali Khakifirooz | 2014-08-26 |
| 8759168 | MOSFET with thin semiconductor channel and embedded stressor with enhanced junction isolation and method of fabrication | Kangguo Cheng, Bruce B. Doris, Ali Khakifirooz | 2014-06-24 |
| 8742504 | Fully-depleted son | Kangguo Cheng, Bruce B. Doris, Ghavam G. Shahidi | 2014-06-03 |
| 8652888 | SOI device with DTI and STI | Kangguo Cheng, Bruce B. Doris, Ali Khakifirooz | 2014-02-18 |
| 8647936 | Junction field effect transistor with an epitaxially grown gate structure | Tak H. Ning, Kangguo Cheng, Ali Khakifirooz | 2014-02-11 |
| 8647939 | Non-relaxed embedded stressors with solid source extension regions in CMOS devices | Kangguo Cheng, Bruce B. Doris, Ali Khakifirooz, Douglas C. La Tulipe, Jr. | 2014-02-11 |
| 8564064 | Controlled fin-merging for fin type FET devices | Kangguo Cheng, Bruce B. Doris, Ali Khakifirooz | 2013-10-22 |
| 8551848 | Field effect transistor with asymmetric abrupt junction implant | Kangguo Cheng, Bruce B. Doris, Ali Khakifirooz | 2013-10-08 |