Issued Patents All Time
Showing 51–75 of 94 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 9391091 | MOSFET with work function adjusted metal backgate | Kangguo Cheng, Bruce B. Doris, Ali Khakifirooz | 2016-07-12 |
| 9391173 | FinFET device with vertical silicide on recessed source/drain epitaxy regions | Keith E. Fogel, Qiqing C. Ouyang, Alexander Reznicek | 2016-07-12 |
| 9391198 | Strained semiconductor trampoline | Qiqing C. Ouyang, Alexander Reznicek, Dominic J. Schepis | 2016-07-12 |
| 9385237 | Source and drain doping profile control employing carbon-doped semiconductor material | Viorel Ontalus, Donald R. Wall, Zhengmao Zhu | 2016-07-05 |
| 9379219 | SiGe finFET with improved junction doping control | Qiqing C. Ouyang, Alexander Reznicek | 2016-06-28 |
| 9362282 | High-K gate dielectric and metal gate conductor stack for planar field effect transistors formed on type III-V semiconductor material and silicon germanium semiconductor material | Takashi Ando, Martin M. Frank, Vijay Narayanan | 2016-06-07 |
| 9356119 | MOSFETs with reduced contact resistance | Bruce B. Doris, Kangguo Cheng, Ali Khakifirooz | 2016-05-31 |
| 9356019 | Integrated circuit with on chip planar diode and CMOS devices | Kangguo Cheng, Ali Khakifirooz, Ghavam G. Shahidi | 2016-05-31 |
| 9337259 | Structure and method to improve ETSOI MOSFETS with back gate | Kangguo Cheng, Bruce B. Doris, Ali Khakifirooz, Balasubramanian Pranatharthiharan | 2016-05-10 |
| 9293464 | Structure to enhance gate induced strain effect in multigate devices | Veeraraghavan S. Basker, Junli Wang, Tenko Yamashita, Chun-Chen Yeh | 2016-03-22 |
| 9276118 | FinFET device having a merge source drain region under contact areas and unmerged fins between contact areas, and a method of manufacturing same | Qiqing C. Ouyang, Alexander Reznicek | 2016-03-01 |
| 9275908 | Semiconductor device including gate channel having adjusted threshold voltage | Qiqing C. Ouyang, Alexander Reznicek | 2016-03-01 |
| 9240497 | Junction field effect transistor with an epitaxially grown gate structure | Tak H. Ning, Kangguo Cheng, Ali Khakifirooz | 2016-01-19 |
| 9231108 | Source and drain doping profile control employing carbon-doped semiconductor material | Viorel Ontalus, Donald R. Wall, Zhengmao Zhu | 2016-01-05 |
| 9230992 | Semiconductor device including gate channel having adjusted threshold voltage | Qiqing C. Ouyang, Alexander Reznicek | 2016-01-05 |
| 9214397 | Structure and method to modulate threshold voltage for high-K metal gate field effect transistors (FETs) | Bruce B. Doris, Kangguo Cheng, Steven J. Holmes, Ali Khakifirooz, Shom Ponoth +2 more | 2015-12-15 |
| 9202864 | Integrated circuit having back gating, improved isolation and reduced well resistance and method to fabricate same | Jin Cai, Kangguo Cheng, Ali Khakifirooz | 2015-12-01 |
| 9190313 | Shallow trench isolation structures | Bruce B. Doris, Kangguo Cheng, Balasubramanian S. Haran, Ali Khakifirooz, Arvind Kumar +1 more | 2015-11-17 |
| 9105662 | Method and structure to enhance gate induced strain effect in multigate device | Veeraraghavan S. Basker, Junli Wang, Tanko Yamashita, Chun-Chen Yeh | 2015-08-11 |
| 9059014 | Integrated circuit diode | Kangguo Cheng, Ali Khakifirooz, Ghavam G. Shahidi | 2015-06-16 |
| 9059005 | MOSFET with recessed channel film and abrupt junctions | Kangguo Cheng, Bruce B. Doris, Ali Khakifirooz | 2015-06-16 |
| 9053946 | MOSFET with recessed channel film and abrupt junctions | Kangguo Cheng, Bruce B. Doris, Ali Khakifirooz | 2015-06-09 |
| 9041009 | Method and structure for forming high-K/metal gate extremely thin semiconductor on insulator device | Bruce B. Doris, Kangguo Cheng, Ali Khakifirooz | 2015-05-26 |
| 9041108 | MOSFET with recessed channel film and abrupt junctions | Kangguo Cheng, Bruce B. Doris, Ali Khakifirooz | 2015-05-26 |
| 9029988 | Through silicon via in n+ epitaxy wafers with reduced parasitic capacitance | Kangguo Cheng, Subramanian S. Iyer, Ali Khakifirooz | 2015-05-12 |