Issued Patents All Time
Showing 1,376–1,400 of 2,819 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 10002926 | Method and structure for forming dielectric isolated FinFET with improved source/drain epitaxy | Pouya Hashemi, Alexander Reznicek | 2018-06-19 |
| 10002925 | Strained semiconductor device | Peng Xu | 2018-06-19 |
| 10002924 | Devices including high percentage SiGe fins formed at a tight pitch and methods of manufacturing same | Karthik Balakrishnan, Pouya Hashemi, Alexander Reznicek | 2018-06-19 |
| 10002923 | Techniques for forming finFET transistors with same fin pitch and different source/drain epitaxy configurations | Peng Xu | 2018-06-19 |
| 10002868 | Vertical fin resistor devices | Zhenxing Bi, Peng Xu | 2018-06-19 |
| 10002809 | Top contact resistance measurement in vertical FETs | Zuoguang Liu, Xin Miao, Wenyu Xu, Chen Zhang | 2018-06-19 |
| 10002803 | Flipped vertical field-effect-transistor | Xin Miao, Wenyu Xu, Chen Zhang | 2018-06-19 |
| 10002795 | Method and structure for forming vertical transistors with shared gates and separate gates | Zhenxing Bi, Juntao Li, Peng Xu | 2018-06-19 |
| 10002794 | Multiple gate length vertical field-effect-transistors | Karthik Balakrishnan, Pouya Hashemi, Alexander Reznicek | 2018-06-19 |
| 9997618 | Integrated strained stacked nanosheet FET | Ramachandra Divakaruni, Juntao Li, Xin Miao | 2018-06-12 |
| 9997606 | Fully depleted SOI device for reducing parasitic back gate capacitance | Ramachandra Divakaruni | 2018-06-12 |
| 9997597 | Vertical single electron transistor formed by condensation | Xin Miao, Wenyu Xu, Chen Zhang | 2018-06-12 |
| 9997540 | Structure and method for compressively strained silicon germanium fins for pFET devices and tensily strained silicon fins for nFET devices | Bruce B. Doris, Ali Khakifirooz, Darsen D. Lu, Alexander Reznicek, Kern Rim | 2018-06-12 |
| 9997421 | Top contact resistance measurement in vertical FETS | Zuoguang Liu, Xin Miao, Wenyu Xu, Chen Zhang | 2018-06-12 |
| 9991365 | Forming vertical transport field effect transistors with uniform bottom spacer thickness | Xuefeng Liu, Peng Xu, Yongan Xu | 2018-06-05 |
| 9991334 | Nanosheet capacitor | Zhenxing Bi, Dongbing Shao, Zheng Xu | 2018-06-05 |
| 9991328 | Tunable on-chip nanosheet resistor | Zhenxing Bi, Wei Wang, Zheng Xu | 2018-06-05 |
| 9991254 | Forming horizontal bipolar junction transistor compatible with nanosheets | Juntao Li, Geng Wang, Qintao Zhang | 2018-06-05 |
| 9991168 | Germanium dual-fin field effect transistor | Karthik Balakrishnan, Pouya Hashemi, Alexander Reznicek | 2018-06-05 |
| 9991166 | Wimpy device by selective laser annealing | Nicolas Loubet, Xin Miao, Alexander Reznicek | 2018-06-05 |
| 9991117 | Fin patterns with varying spacing without fin cut | Marc A. Bergendahl, John R. Sporre, Sean Teehan | 2018-06-05 |
| 9985138 | Vertically aligned nanowire channels with source/drain interconnects for nanosheet transistors | Marc A. Bergendahl, Eric R. Miller, John R. Sporre, Sean Teehan | 2018-05-29 |
| 9985135 | Replacement low-k spacer | Xiuyu Cai, Ali Khakifirooz, Ruilong Xie | 2018-05-29 |
| 9985117 | Method and structure for forming dielectric isolated finFET with improved source/drain epitaxy | Juntao Li | 2018-05-29 |
| 9985107 | Method and structure for forming MOSFET with reduced parasitic capacitance | Peng Xu, Chen Zhang | 2018-05-29 |