Issued Patents All Time
Showing 51–75 of 80 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 8546920 | Semiconductor-on-insulator (SOI) structures including gradient nitrided buried oxide (BOX) | Toshiharu Furukawa, Wilfried Haensch, Zhibin Ren, Dinkar Singh, Jeffrey W. Sleight | 2013-10-01 |
| 8343781 | Electrical mask inspection | Arvind Kumar, Shreesh Narasimha | 2013-01-01 |
| 8299519 | Read transistor for single poly non-volatile memory using body contacted SOI device | Arvind Kumar | 2012-10-30 |
| 8288826 | Semiconductor-on-insulator (SOI) structures including gradient nitrided buried oxide (BOX) | Toshiharu Furukawa, Wilfried Haensch, Zhibin Ren, Dinkar Singh, Jeffrey W. Sleight | 2012-10-16 |
| 8232603 | Gated diode structure and method including relaxed liner | Gregory G. Freeman, Kevin McStay, Shreesh Narasimha | 2012-07-31 |
| 8232599 | Bulk substrate FET integrated on CMOS SOI | Arvind Kumar, Shreesh Narasimha, Ning Su, Huiling Shang | 2012-07-31 |
| 8173524 | Process for epitaxially growing epitaxial material regions | Ashima B. Chakravarti, Abhishek Dube, Dominic J. Schepis | 2012-05-08 |
| 8053373 | Semiconductor-on-insulator(SOI) structures including gradient nitrided buried oxide (BOX) | Toshiharu Furukawa, Wilfried Haensch, Zhibin Ren, Dinkar Singh, Jeffrey W. Sleight | 2011-11-08 |
| 8053325 | Body contact structures and methods of manufacturing the same | Arvind Kumar, Shreesh Narasimha | 2011-11-08 |
| 7956415 | SOI transistor having a carrier recombination structure in a body | Andres Bryant, Arvind Kumar, Shreesh Narasimha | 2011-06-07 |
| 7893494 | Method and structure for SOI body contact FET with reduced parasitic capacitance | Leland Chang, Shreesh Narasimha, Jeffrey W. Sleight | 2011-02-22 |
| 7888241 | Selective deposition of germanium spacers on nitride | Ashima B. Chakravarti, Toshiharu Furukawa, Steven J. Holmes, Wesley C. Nazle | 2011-02-15 |
| 7814454 | Selectable device options for characterizing semiconductor devices | James S. Dunn, Brian M. Dufrene, Christopher H. Lumbra, Shreesh Narasimha, Christopher S. Putnam +2 more | 2010-10-12 |
| 7804140 | Field effect transistor with reduced shallow trench isolation induced leakage current | Leland Chang, Shreesh Narasimha, Jeffrey W. Sleight | 2010-09-28 |
| 7705385 | Selective deposition of germanium spacers on nitride | Ashima B. Chakravarti, Toshiharu Furukawa, Steven J. Holmes, Wesley C. Natzle | 2010-04-27 |
| 7518145 | Integrated multiple gate dielectric composition and thickness semiconductor chip and method of manufacturing the same | Renee T. Mo, Shreesh Narasimha | 2009-04-14 |
| 7491563 | Nitridation of STI fill oxide to prevent the loss of STI fill oxide during manufacturing process | Fred Buehrer, Toshiharu Furukawa, Renee T. Mo | 2009-02-17 |
| 7491964 | Nitridation of STI fill oxide to prevent the loss of STI fill oxide during manufacturing process | Fred Buehrer, Toshiharu Furukawa, Renee T. Mo | 2009-02-17 |
| 7456115 | Method for forming semiconductor devices having reduced gate edge leakage current | Shreesh Narasimha | 2008-11-25 |
| 7396776 | Semiconductor-on-insulator (SOI) structures including gradient nitrided buried oxide (BOX) | Toshiharu Furukawa, Wilfried Haensch, Zhibin Ren, Dinkar Singh, Jeffrey W. Sleight | 2008-07-08 |
| 7288814 | Selective post-doping of gate structures by means of selective oxide growth | Toshiharu Furukawa, Steven J. Holmes | 2007-10-30 |
| 7235440 | Formation of ultra-thin oxide layers by self-limiting interfacial oxidation | David L. O'Meara, Cory Wajda, Anthony Dip, Michael Toeller, Toshihara Furukawa +6 more | 2007-06-26 |
| 7202186 | Method of forming uniform ultra-thin oxynitride layers | David L. O'Meara, Cory Wajda, Anthony Dip, Michael Toeller, Toshihara Furukawa +6 more | 2007-04-10 |
| 7160771 | Forming gate oxides having multiple thicknesses | Michael P. Chudzik, Toshiharu Furukawa, Oleg Gluschenkov, Paul Kirsch, Byoung Hun Lee +4 more | 2007-01-09 |
| 7022626 | Dielectrics with improved leakage characteristics | Robert Benjamin Laibowitz | 2006-04-04 |