Issued Patents All Time
Showing 76–80 of 80 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 6995065 | Selective post-doping of gate structures by means of selective oxide growth | Toshiharu Furukawa, Steven J. Holmes | 2006-02-07 |
| 6930060 | Method for forming a uniform distribution of nitrogen in silicon oxynitride gate dielectric | Michael P. Chudzik, Toshiharu Furukawa, Oleg Gluschenkov, Paul Kirsch, Kristen Scheer +1 more | 2005-08-16 |
| 6821833 | Method for separately optimizing thin gate dielectric of PMOS and NMOS transistors within the same semiconductor chip and device manufactured thereby | Toshiharu Furukawa, Patrick R. Varekamp, Jeffrey W. Sleight, Akihisa Sekiguchi | 2004-11-23 |
| 6780720 | Method for fabricating a nitrided silicon-oxide gate dielectric | Jay Burnham, Toshiharu Furukawa, Margaret L. Gibson, James S. Nakos, Steven M. Shank | 2004-08-24 |
| 6426305 | Patterned plasma nitridation for selective epi and silicide formation | Toshiharu Furukawa, Akihisa Sekiguchi | 2002-07-30 |