| 8546920 |
Semiconductor-on-insulator (SOI) structures including gradient nitrided buried oxide (BOX) |
Anthony I. Chou, Toshiharu Furukawa, Wilfried Haensch, Zhibin Ren, Jeffrey W. Sleight |
2013-10-01 |
$5,042,000 |
| 8288826 |
Semiconductor-on-insulator (SOI) structures including gradient nitrided buried oxide (BOX) |
Anthony I. Chou, Toshiharu Furukawa, Wilfried Haensch, Zhibin Ren, Jeffrey W. Sleight |
2012-10-16 |
$3,795,000 |
| 8101150 |
Control of carbon nanotube diameter using CVD or PECVD growth |
Alfred Grill, Deborah A. Neumayer |
2012-01-24 |
$7,514,000 |
| 8053373 |
Semiconductor-on-insulator(SOI) structures including gradient nitrided buried oxide (BOX) |
Anthony I. Chou, Toshiharu Furukawa, Wilfried Haensch, Zhibin Ren, Jeffrey W. Sleight |
2011-11-08 |
$3,097,000 |
| 8021956 |
Ultrathin SOI CMOS devices employing differential STI liners |
Zhibin Ren, Ghavam G. Shahidi, Jeffrey W. Sleight, Xinhui Wang |
2011-09-20 |
$5,575,000 |
| 8012820 |
Ultra-thin SOI CMOS with raised epitaxial source and drain and embedded SiGe PFET extension |
Amlan Majumdar, Gen Pei, Zhibin Ren, Jeffrey W. Sleight |
2011-09-06 |
|
| 7776624 |
Method for improving semiconductor surfaces |
Ashima B. Chakravarti, Judson R. Holt, Jeremy J. Kempisty, Suk Hoon Ku, Woo-Hyeong Lee +4 more |
2010-08-17 |
$4,695,000 |
| 7713837 |
Low temperature fusion bonding with high surface energy using a wet chemical treatment |
Kevin K. Chan, Kathryn Guarini, Erin C. Jones, Antonio F. Saavedra, Jr., Leathen Shi |
2010-05-11 |
$5,650,000 |
| 7687863 |
Selective incorporation of charge for transistor channels |
John Michael Hergenrother, Zhibin Ren, Jeffrey W. Sleight |
2010-03-30 |
$5,470,000 |
| 7659583 |
Ultrathin SOI CMOS devices employing differential STI liners |
Zhibin Ren, Ghavam G. Shahidi, Jeffrey W. Sleight, Xinhui Wang |
2010-02-09 |
$5,437,000 |
| 7628974 |
Control of carbon nanotube diameter using CVD or PECVD growth |
Alfred Grill, Deborah A. Neumayer |
2009-12-08 |
$16,023,000 |
| 7566631 |
Low temperature fusion bonding with high surface energy using a wet chemical treatment |
Kevin K. Chan, Kathryn Guarini, Erin C. Jones, Antonio F. Saavedra, Jr., Leathen Shi |
2009-07-28 |
$11,761,000 |
| 7396776 |
Semiconductor-on-insulator (SOI) structures including gradient nitrided buried oxide (BOX) |
Anthony I. Chou, Toshiharu Furukawa, Wilfried Haensch, Zhibin Ren, Jeffrey W. Sleight |
2008-07-08 |
$9,414,000 |
| 7374998 |
Selective incorporation of charge for transistor channels |
John Michael Hergenrother, Zhibin Ren, Jeffrey W. Sleight |
2008-05-20 |
$8,483,000 |
| 6972440 |
Enhanced T-gate structure for modulation doped field effect transistors |
Katherine L. Saenger, Vishnubhai V. Patel, Alfred Grill, Steven J. Koester |
2005-12-06 |
$7,444,000 |
| 6911375 |
Method of fabricating silicon devices on sapphire with wafer bonding at low temperature |
Kathryn Guarini, Louis L. Hsu, Leathen Shi, Li-Kong Wang |
2005-06-28 |
$7,000,000 |
| 6740535 |
Enhanced T-gate structure for modulation doped field effect transistors |
Katherine L. Saenger, Vishnubhai V. Patel, Alfred Grill, Steven J. Koester |
2004-05-25 |
$11,301,000 |
