Issued Patents All Time
Showing 151–175 of 767 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 9997540 | Structure and method for compressively strained silicon germanium fins for pFET devices and tensily strained silicon fins for nFET devices | Kangguo Cheng, Ali Khakifirooz, Darsen D. Lu, Alexander Reznicek, Kern Rim | 2018-06-12 |
| 9985115 | Vertical transistor fabrication and devices | Brent A. Anderson, Seong-Dong Kim, Rajasekhar Venigalla | 2018-05-29 |
| 9966387 | Strain release in pFET regions | Kangguo Cheng, Ali Khakifirooz, Darsen D. Lu, Alexander Reznicek, Kern Rim | 2018-05-08 |
| 9954116 | Electrostatically enhanced fins field effect transistors | Kangguo Cheng, Pouya Hashemi, Ali Khakifirooz, Alexander Reznicek | 2018-04-24 |
| 9954083 | Semiconductor structures having increased channel strain using fin release in gate regions | Kangguo Cheng, Ali Khakifirooz, Darsen D. Lu, Alexander Reznicek, Kern Rim | 2018-04-24 |
| 9947743 | Structures and methods for long-channel devices in nanosheet technology | Terence B. Hook | 2018-04-17 |
| 9947593 | Extra gate device for nanosheet | Terence B. Hook, Junli Wang | 2018-04-17 |
| 9941411 | Vertical transistor fabrication and devices | Brent A. Anderson, Seong-Dong Kim, Rajasekhar Venigalla | 2018-04-10 |
| 9917188 | Dielectric isolated fin with improved fin profile | Kangguo Cheng, Darsen D. Lu, Ali Khakifirooz, Kern Rim | 2018-03-13 |
| 9917105 | Replacement fin process in SSOI wafer | Hong He, Ali Khakifirooz, Junli Wang | 2018-03-13 |
| 9917019 | Strained FinFET device fabrication | Hong He, Sivananda K. Kanakasabapathy, Gauri Karve, Fee Li Lie, Stuart A. Sieg | 2018-03-13 |
| 9917015 | Dual channel material for finFET for high performance CMOS | Kangguo Cheng, Pouya Hashemi, Ali Khakifirooz, Alexander Reznicek | 2018-03-13 |
| 9911741 | Dual channel material for finFET for high performance CMOS | Kangguo Cheng, Pouya Hashemi, Ali Khakifirooz, Alexander Reznicek | 2018-03-06 |
| 9911592 | Method for making nanosheet CMOS device integrating atomic layer deposition process and replacement gate structure | Michael A. Guillorn, Isaac Lauer, Xin Miao | 2018-03-06 |
| 9899384 | Self aligned structure and method for high-K metal gate work function tuning | Kangguo Cheng, Ali Khakifirooz, Alexander Reznicek | 2018-02-20 |
| 9899253 | Fabrication of silicon germanium-on-insulator finFET | Hong He, Qing Liu | 2018-02-20 |
| 9892975 | Adjacent strained <100> NFET fins and <110> PFET fins | Kangguo Cheng, Pouya Hashemi, Alexander Reznicek | 2018-02-13 |
| 9881937 | Preventing strained fin relaxation | Kangguo Cheng, Hong He, Sivananda K. Kanakasabapathy, Gauri Karve, Juntao Li +3 more | 2018-01-30 |
| 9876074 | Structure and process to tuck fin tips self-aligned to gates | Hong He, Sivananda K. Kanakasabapathy, Gauri Karve, Fee Li Lie, Derrick Liu +2 more | 2018-01-23 |
| 9859357 | Magnetic inductor stacks with multilayer isolation layers | Hariklia Deligianni, Eugene J. O'Sullivan, Naigang Wang | 2018-01-02 |
| 9853132 | Nanosheet MOSFET with full-height air-gap spacer | Kangguo Cheng, Michael A. Guillorn, Xin Miao | 2017-12-26 |
| 9818650 | Extra gate device for nanosheet | Terence B. Hook, Junli Wang | 2017-11-14 |
| 9812357 | Self-limiting silicide in highly scaled fin technology | Kangguo Cheng, Pouya Hashemi, Ali Khakifirooz, Alexander Reznicek | 2017-11-07 |
| 9812571 | Tensile strained high percentage silicon germanium alloy FinFETs | Pouya Hashemi, Alexander Reznicek, Joshua M. Rubin, Robin M. Schulz | 2017-11-07 |
| 9812321 | Method for making nanosheet CMOS device integrating atomic layer deposition process and replacement gate structure | Michael A. Guillorn, Isaac Lauer, Xin Miao | 2017-11-07 |