Issued Patents All Time
Showing 76–100 of 134 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 7160769 | Channel orientation to enhance transistor performance | Ted R. White, Alexander L. Barr, Dejan Jovanovic, Mariam Sadaka, Voon-Yew Thean | 2007-01-09 |
| 7141857 | Semiconductor structures and methods of fabricating semiconductor structures comprising hafnium oxide modified with lanthanum, a lanthanide-series metal, or a combination thereof | Zhiyi Yu, Jay A. Curless, Yong Liang, Alexandra Navrotsky, Sergey Ushakov +1 more | 2006-11-28 |
| 7091071 | Semiconductor fabrication process including recessed source/drain regions in an SOI wafer | Voon-Yew Thean, Brian J. Goolsby, Thien T. Nguyen, Tab A. Stephens | 2006-08-15 |
| 7067868 | Double gate device having a heterojunction source/drain and strained channel | Voon-Yew Thean, Mariam Sadaka, Ted R. White, Alexander L. Barr, Venkat R. Kolagunta +2 more | 2006-06-27 |
| 7056778 | Semiconductor layer formation | Chun-Li Liu, Mariam Sadaka, Alexander L. Barr, Voon-Yew Thean, Shawn George Thomas +2 more | 2006-06-06 |
| 7037795 | Low RC product transistors in SOI semiconductor process | Alexander L. Barr, Olubunmi O. Adetutu, Marius Orlowski, Mariam Sadaka, Voon-Yew Thean +1 more | 2006-05-02 |
| 7029980 | Method of manufacturing SOI template layer | Chun-Li Liu, Marius Orlowski, Matthew W. Stoker, Philip J. Tobin, Mariam Sadaka +4 more | 2006-04-18 |
| 7018901 | Method for forming a semiconductor device having a strained channel and a heterojunction source/drain | Voon-Yew Thean, Mariam Sadaka, Ted R. White, Alexander L. Barr, Venkat R. Kolagunta +2 more | 2006-03-28 |
| 6979622 | Semiconductor transistor having structural elements of differing materials and method of formation | Voon-Yew Thean, Dina H. Triyoso | 2005-12-27 |
| 6951783 | Confined spacers for double gate transistor semiconductor fabrication process | Leo Mathew, Rode R. Mora, Tab A. Stephens, Anne Vandooren | 2005-10-04 |
| 6949455 | Method for forming a semiconductor device structure a semiconductor layer | Daniel T. Pham, James K. Schaeffer, Melissa O. Zavala, Sherry G. Straub, Kimberly Gay Reid +2 more | 2005-09-27 |
| 6891229 | Inverted isolation formed with spacers | Andrea Franke, Jonathan Cobb, John M. Grant, Al T. Koh, Yeong-Jyh T. Lii +1 more | 2005-05-10 |
| 6838322 | Method for forming a double-gated semiconductor device | Daniel T. Pham, Alexander L. Barr, Leo Mathew, Anne Vandooren, Ted R. White | 2005-01-04 |
| 6835671 | Method of making an integrated circuit using an EUV mask formed by atomic layer deposition | Scott D. Hector, Dina H. Triyoso | 2004-12-28 |
| 6831350 | Semiconductor structure with different lattice constant materials and method for forming the same | Chun-Li Liu, Alexander L. Barr, John M. Grant, Marius Orlowski, Tab A. Stephens +2 more | 2004-12-14 |
| 6794281 | Dual metal gate transistors for CMOS process | Sucharita Madhukar | 2004-09-21 |
| 6770923 | High K dielectric film | Hong Zhou, Xiao-Ping Wang | 2004-08-03 |
| 6753216 | Multiple gate transistor employing monocrystalline silicon walls | Leo Mathew, Daniel T. Pham, Anne Vandooren | 2004-06-22 |
| 6743668 | Process for forming a metal oxy-nitride dielectric layer by varying the flow rate of nitrogen into the chamber | James K. Schaeffer, Mark V. Raymond | 2004-06-01 |
| 6576967 | Semiconductor structure and process for forming a metal oxy-nitride dielectric layer | James K. Schaeffer, Mark V. Raymond | 2003-06-10 |
| 6545324 | Dual metal gate transistors for CMOS process | Sucharita Madhukar | 2003-04-08 |
| 6541280 | High K dielectric film | Vidya Kaushik, Srinivas V. Pietambaram, James K. Schaeffer | 2003-04-01 |
| 6518634 | Strontium nitride or strontium oxynitride gate dielectric | Vidya Kaushik | 2003-02-11 |
| 6518106 | Semiconductor device and a method therefor | Tat Ngai, Vidya Kaushik, Jamie Schaeffer | 2003-02-11 |
| 6509609 | Grooved channel schottky MOSFET | Yaohui Zhang, Kuntal Joardar, Daniel T. Pham | 2003-01-21 |