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Method of area compaction for integrated circuit layout design |
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Reflective mask useful for transferring a pattern using extreme ultra violet (EUV) radiation and method of making the same |
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Reflective mask useful for transferring a pattern using extreme ultraviolet (EUV) radiation and method of making the same |
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Attenuated phase shift mask for extreme ultraviolet lithography and method therefore |
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Compensation of flare-induced CD changes EUVL |
John E. Bjorkholm, Daniel G. Stearns, Eric M. Gullikson, Daniel A. Tichenor |
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Removable pellicle for lithographic mask protection and handling |
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Method for forming a lithographic mask used for patterning semiconductor die |
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1999-12-14 |
