Issued Patents All Time
Showing 76–100 of 127 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 6319767 | Method to eliminate top metal corner shaping during bottom metal patterning for MIM capacitors via plasma ashing and hard masking technique | Randall Cher Liang Cha, Tae Jong Lee, Alex See, Yeow Kheng Lim | 2001-11-20 |
| 6313008 | Method to form a balloon shaped STI using a micro machining technique to remove heavily doped silicon | Ying-Keung Leung, Yelehanka Ramachandramurthy Pradeep, Jia Zhen Zheng, Elgin Quek, Ravi Sundaresan +2 more | 2001-11-06 |
| 6306714 | Method to form an elevated S/D CMOS device by contacting S/D through the contact of oxide | Yang Pan, James Yongmeng Lee, Ying-Keung Leung, Yelehanka Ramachandramurthy Pradeep, Jia Zhen Zheng +2 more | 2001-10-23 |
| 6306715 | Method to form smaller channel with CMOS device by isotropic etching of the gate materials | Elgin Quek, Ravi Sundaresan, Yang Pan, James Yong Meng Lee, Ying-Keung Leung +2 more | 2001-10-23 |
| 6303418 | Method of fabricating CMOS devices featuring dual gate structures and a high dielectric constant gate insulator layer | Cher Liang Cha, Alex See | 2001-10-16 |
| 6303449 | Method to form self-aligned elevated source/drain by selective removal of gate dielectric in the source/drain region followed by poly deposition and CMP | Yang Pan, James Yong Meng Lee, Ying-Keung Leung, Yelehanka Ramachandramurthy Pradeep, Jia Zhen Zheng +2 more | 2001-10-16 |
| 6300177 | Method to form transistors with multiple threshold voltages (VT) using a combination of different work function gate materials | Ravi Sundaresan, Yang Pan, James Yong Meng Lee, Ying-Keung Leung, Yelehanka Ramachandramurthy Pradeep +2 more | 2001-10-09 |
| 6300172 | Method of field isolation in silicon-on-insulator technology | Ting Cheong Ang, Shyue Pong Quek, Sang Yee Loong | 2001-10-09 |
| 6297109 | Method to form shallow junction transistors while eliminating shorts due to junction spiking | Cher Liang Cha, Ravishankar Sundaresan | 2001-10-02 |
| 6284610 | Method to reduce compressive stress in the silicon substrate during silicidation | Randall Cher Liang Cha, Chee Tee Chua, Kin Leong Pey | 2001-09-04 |
| 6281117 | Method to form uniform silicide features | Chaw Sing Ho, Fong Yau Sam Li, Hou T. Ng | 2001-08-28 |
| 6274485 | Method to reduce dishing in metal chemical-mechanical polishing | Feng Chen, Rick Teo | 2001-08-14 |
| 6275089 | Low voltage controllable transient trigger network for ESD protection | Jun Song, Ting Cheong Ang, Shyue Fong Quek | 2001-08-14 |
| 6268276 | Area array air gap structure for intermetal dielectric application | Kheng Chok Tee, Kok Keng Ong, Chin Hwee Seah | 2001-07-31 |
| 6261935 | Method of forming contact to polysilicon gate for MOS devices | Alex See, Ravi Sundaresan | 2001-07-17 |
| 6251798 | Formation of air gap structures for inter-metal dielectric application | Choi Pheng Soo, Kheng Chok Tee, Kok Keng Ong | 2001-06-26 |
| 6251781 | Method to deposit a platinum seed layer for use in selective copper plating | Mei Sheng Zhou, Guo Qin Xu | 2001-06-26 |
| 6252277 | Embedded polysilicon gate MOSFET | Cher Liang Cha, Eng Fong Chor, Gong Hao, Teck Koon Lee | 2001-06-26 |
| 6252290 | Method to form, and structure of, a dual damascene interconnect device | Shyue Fong Quek, Ting Cheong Ang, Sang Yee Loong | 2001-06-26 |
| 6248659 | Method for forming an interconnect structure | Randall Liang | 2001-06-19 |
| 6225225 | Method to form shallow trench isolation structures for borderless contacts in an integrated circuit | Kenny Hua Kooi Goh, Kok Siong Yap | 2001-05-01 |
| 6221560 | Method to enhance global planarization of silicon oxide surface for IC device fabrication | Choi Pheng Soo | 2001-04-24 |
| 6221727 | Method to trap air at the silicon substrate for improving the quality factor of RF inductors in CMOS technology | Johnny Kok Wai Chew, Cher Liang Cha, Chee Tee Chua | 2001-04-24 |
| 6214728 | Method to encapsulate copper plug for interconnect metallization | Sam Fong Yau Li, Hou T. Ng | 2001-04-10 |
| 6207534 | Method to form narrow and wide shallow trench isolations with different trench depths to eliminate isolation oxide dishing | Cher Liang Cha, Teck Koon Lee | 2001-03-27 |