Issued Patents All Time
Showing 26–44 of 44 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 6194325 | Oxide etch process with high selectivity to nitride suitable for use on surfaces of uneven topography | Chan-Lon Yang, Jeffrey Marks, Nicolas Bright, Kenneth S. Collins, Peter Keswick | 2001-02-27 |
| 6171974 | High selectivity oxide etch process for integrated circuit structures | Jeffrey Marks, Jerry Wong, Peter Keswick, Chan-Lon Yang | 2001-01-09 |
| 6083412 | Plasma etch apparatus with heated scavenging surfaces | Michael R. Rice, Jeffrey Marks, Nicolas Bright | 2000-07-04 |
| 6077384 | Plasma reactor having an inductive antenna coupling power through a parallel plate electrode | Kenneth S. Collins, Michael R. Rice, John Trow, Douglas A. Buchberger, Jr., Eric Askarinam +2 more | 2000-06-20 |
| 6068784 | Process used in an RF coupled plasma reactor | Kenneth S. Collins, Craig A. Roderick, John Trow, Chan-Lon Yang, Jerry Wong +6 more | 2000-05-30 |
| 6053801 | Substrate polishing with reduced contamination | Jay D. Pinson, II, Nitin Shah, Joe Waidl | 2000-04-25 |
| 6054013 | Parallel plate electrode plasma reactor having an inductive antenna and adjustable radial distribution of plasma ion density | Kenneth S. Collins, Michael R. Rice, John Trow, Douglas A. Buchberger, Jr., Eric Askarinam +2 more | 2000-04-25 |
| 6036877 | Plasma reactor with heated source of a polymer-hardening precursor material | Kenneth S. Collins, Michael R. Rice, Gerald Yin, Jon Mohn, Craig A. Roderick +5 more | 2000-03-14 |
| 6024826 | Plasma reactor with heated source of a polymer-hardening precursor material | Kenneth S. Collins, Michael R. Rice, Gerald Yin, Jon Mohn, Craig A. Roderick +5 more | 2000-02-15 |
| 5990017 | Plasma reactor with heated source of a polymer-hardening precursor material | Kenneth S. Collins, Michael R. Rice, Gerald Yin, Jon Mohn, Craig A. Roderick +5 more | 1999-11-23 |
| 5925212 | Apparatus and method for attaining repeatable temperature versus time profiles for plasma heated interactive parts used in mass production plasma processing | Michael R. Rice, James P. Cruse, Kenneth S. Collins | 1999-07-20 |
| 5888414 | Plasma reactor and processes using RF inductive coupling and scavenger temperature control | Kenneth S. Collins, Chan-Lon Yang, Jerry Wong, Jeffrey Marks, Peter Keswick | 1999-03-30 |
| 5770099 | Plasma etch apparatus with heated scavenging surfaces | Michael R. Rice, Jeffrey Marks, Nicolas Bright | 1998-06-23 |
| 5556501 | Silicon scavenger in an inductively coupled RF plasma reactor | Kenneth S. Collins, Craig A. Roderick, John Trow, Chan-Lon Yang, Jerry Wong +7 more | 1996-09-17 |
| 5477975 | Plasma etch apparatus with heated scavenging surfaces | Michael R. Rice, Jeffrey Marks, Nicolas Bright | 1995-12-26 |
| 5423945 | Selectivity for etching an oxide over a nitride | Jeffrey Marks, Kenneth S. Collins, Chan-Lon Yang, Peter Keswick | 1995-06-13 |
| 5308417 | Uniformity for magnetically enhanced plasma chambers | Masato Toshima, Robert Steger, Jerry Wong, Tetsuya Ishikawa, Regga Tekeste +2 more | 1994-05-03 |
| 5292399 | Plasma etching apparatus with conductive means for inhibiting arcing | Terrance Y. Lee, Fred C. Redeker, Petru N. Nitescu, Robert Steger, Semyon Sherstinsky +2 more | 1994-03-08 |
| 5021121 | Process for RIE etching silicon dioxide | Brad Taylor, John R. Henri, Naomi Obinata | 1991-06-04 |