Issued Patents 2022
Showing 1–25 of 43 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 11538905 | Nanowire transistors employing carbon-based layers | Glenn A. Glass, Nabil G. Mistkawi, Karthik Jambunathan, Tahir Ghani | 2022-12-27 |
| 11532734 | Gate-all-around integrated circuit structures having germanium nanowire channel structures | Cory Bomberger, Susmita Ghose, Zachary Geiger | 2022-12-20 |
| 11532706 | Gate-all-around integrated circuit structures having embedded GeSnB source or drain structures | Cory Bomberger, Susmita Ghose, Siddharth Chouksey | 2022-12-20 |
| 11527612 | Gate-all-around integrated circuit structures having vertically discrete source or drain structures | Glenn A. Glass, Biswajeet Guha, Dax M. Crum, Sean T. Ma, Tahir Ghani +3 more | 2022-12-13 |
| 11522048 | Gate-all-around integrated circuit structures having source or drain structures with epitaxial nubs | Cory Bomberger, Mark Bohr, Tahir Ghani, Biswajeet Guha | 2022-12-06 |
| 11521968 | Channel structures with sub-fin dopant diffusion blocking layers | Cory Bomberger, Stephen M. Cea, Biswajeet Guha, Anupama Bowonder, Tahir Ghani | 2022-12-06 |
| 11515407 | High breakdown voltage structure for high performance GaN-based HEMT and MOS devices to enable GaN C-MOS | Glenn A. Glass, Sansaptak Dasgupta, Han Wui Then, Marko Radosavljevic, Paul B. Fischer +1 more | 2022-11-29 |
| 11508813 | Column IV transistors for PMOS integration | Glenn A. Glass | 2022-11-22 |
| 11508577 | Channel layer formation for III-V metal-oxide-semiconductor field effect transistors (MOSFETs) | Gilbert Dewey, Matthew V. Metz, Willy Rachmady, Sean T. Ma, Nicholas G. Minutillo +4 more | 2022-11-22 |
| 11482618 | Methods of forming dislocation enhanced strain in NMOS and PMOS structures | Michael Jackson, Glenn A. Glass, Saurabh Morarka, Chandra S. Mohapatra | 2022-10-25 |
| 11482457 | Substrate defect blocking layers for strained channel semiconductor devices | Karthik Jambunathan, Cory Bomberger | 2022-10-25 |
| 11476344 | Contact resistance reduction employing germanium overlayer pre-contact metalization | Glenn A. Glass, Tahir Ghani | 2022-10-18 |
| 11476334 | Silicide structure of an integrated transistor device and method of providing same | Orb Acton, Joseph M. Steigerwald, Scott Maddox, Jenny Hu | 2022-10-18 |
| 11469299 | Gate-all-around integrated circuit structures having underlying dopant-diffusion blocking layers | Glenn A. Glass, Biswajeet Guha, Dax M. Crum, Patrick H. Keys, Tahir Ghani +2 more | 2022-10-11 |
| 11456372 | Multi-height finfet device by selective oxidation | Seiyon Kim, Gopinath Bhimarasetti, Rafael Rios, Jack T. Kavalieros, Tahir Ghani +1 more | 2022-09-27 |
| 11450739 | Germanium-rich nanowire transistor with relaxed buffer layer | Glenn A. Glass, Cory Bomberger, Tahir Ghani, Jack T. Kavalieros, Siddharth Chouksey +3 more | 2022-09-20 |
| 11450738 | Source/drain regions in integrated circuit structures | Sean T. Ma, Glenn A. Glass, Biswajeet Guha | 2022-09-20 |
| 11444159 | Field effect transistors with wide bandgap materials | Sean T. Ma, Gilbert Dewey, Willy Rachmady, Matthew V. Metz, Cheng-Ying Huang +3 more | 2022-09-13 |
| 11444166 | Backside source/drain replacement for semiconductor devices with metallization on both sides | Glenn A. Glass, Karthik Jambunathan, Chandra S. Mohapatra, Patrick Morrow, Mauro J. Kobrinsky | 2022-09-13 |
| 11437472 | Integrated circuit structures having germanium-based channels | Siddharth Chouksey, Glenn A. Glass, Harold W. Kennel, Jack T. Kavalieros, Tahir Ghani +2 more | 2022-09-06 |
| 11430787 | Forming crystalline source/drain contacts on semiconductor devices | Karthik Jambunathan, Scott Maddox, Cory Bomberger | 2022-08-30 |
| 11430868 | Buried etch-stop layer to help control transistor source/drain depth | Rishabh Mehandru, Biswajeet Guha, Anupama Bowonder, Tahir Ghani, Stephen M. Cea | 2022-08-30 |
| 11417655 | High-mobility semiconductor source/drain spacer | Gilbert Dewey, Matthew V. Metz, Tahir Ghani, Willy Rachmady, Chandra S. Mohapatra +2 more | 2022-08-16 |
| 11411110 | Methods of forming dislocation enhanced strain in NMOS and PMOS structures | Michael Jackson, Glenn A. Glass, Saurabh Morarka, Chandra S. Mohapatra | 2022-08-09 |
| 11411096 | Source electrode and drain electrode protection for nanowire transistors | Karthik Jambunathan, Biswajeet Guha, Tahir Ghani | 2022-08-09 |