| 11538905 |
Nanowire transistors employing carbon-based layers |
Glenn A. Glass, Nabil G. Mistkawi, Karthik Jambunathan, Tahir Ghani |
2022-12-27 |
$12,365,000 |
| 11532734 |
Gate-all-around integrated circuit structures having germanium nanowire channel structures |
Cory Bomberger, Susmita Ghose, Zachary Geiger |
2022-12-20 |
$12,719,000 |
| 11532706 |
Gate-all-around integrated circuit structures having embedded GeSnB source or drain structures |
Cory Bomberger, Susmita Ghose, Siddharth Chouksey |
2022-12-20 |
$12,719,000 |
| 11527612 |
Gate-all-around integrated circuit structures having vertically discrete source or drain structures |
Glenn A. Glass, Biswajeet Guha, Dax M. Crum, Sean T. Ma, Tahir Ghani +3 more |
2022-12-13 |
$11,573,000 |
| 11522048 |
Gate-all-around integrated circuit structures having source or drain structures with epitaxial nubs |
Cory Bomberger, Mark Bohr, Tahir Ghani, Biswajeet Guha |
2022-12-06 |
$14,727,000 |
| 11521968 |
Channel structures with sub-fin dopant diffusion blocking layers |
Cory Bomberger, Stephen M. Cea, Biswajeet Guha, Anupama Bowonder, Tahir Ghani |
2022-12-06 |
$14,727,000 |
| 11515407 |
High breakdown voltage structure for high performance GaN-based HEMT and MOS devices to enable GaN C-MOS |
Glenn A. Glass, Sansaptak Dasgupta, Han Wui Then, Marko Radosavljevic, Paul B. Fischer +1 more |
2022-11-29 |
$14,086,000 |
| 11508813 |
Column IV transistors for PMOS integration |
Glenn A. Glass |
2022-11-22 |
|
| 11508577 |
Channel layer formation for III-V metal-oxide-semiconductor field effect transistors (MOSFETs) |
Gilbert Dewey, Matthew V. Metz, Willy Rachmady, Sean T. Ma, Nicholas G. Minutillo +4 more |
2022-11-22 |
$12,862,000 |
| 11482618 |
Methods of forming dislocation enhanced strain in NMOS and PMOS structures |
Michael Jackson, Glenn A. Glass, Saurabh Morarka, Chandra S. Mohapatra |
2022-10-25 |
|
| 11482457 |
Substrate defect blocking layers for strained channel semiconductor devices |
Karthik Jambunathan, Cory Bomberger |
2022-10-25 |
$11,792,000 |
| 11476344 |
Contact resistance reduction employing germanium overlayer pre-contact metalization |
Glenn A. Glass, Tahir Ghani |
2022-10-18 |
|
| 11476334 |
Silicide structure of an integrated transistor device and method of providing same |
Orb Acton, Joseph M. Steigerwald, Scott Maddox, Jenny Hu |
2022-10-18 |
$11,317,000 |
| 11469299 |
Gate-all-around integrated circuit structures having underlying dopant-diffusion blocking layers |
Glenn A. Glass, Biswajeet Guha, Dax M. Crum, Patrick H. Keys, Tahir Ghani +2 more |
2022-10-11 |
$16,542,000 |
| 11456372 |
Multi-height finfet device by selective oxidation |
Seiyon Kim, Gopinath Bhimarasetti, Rafael Rios, Jack T. Kavalieros, Tahir Ghani +1 more |
2022-09-27 |
$23,391,000 |
| 11450739 |
Germanium-rich nanowire transistor with relaxed buffer layer |
Glenn A. Glass, Cory Bomberger, Tahir Ghani, Jack T. Kavalieros, Siddharth Chouksey +3 more |
2022-09-20 |
$15,654,000 |
| 11450738 |
Source/drain regions in integrated circuit structures |
Sean T. Ma, Glenn A. Glass, Biswajeet Guha |
2022-09-20 |
$15,654,000 |
| 11444159 |
Field effect transistors with wide bandgap materials |
Sean T. Ma, Gilbert Dewey, Willy Rachmady, Matthew V. Metz, Cheng-Ying Huang +3 more |
2022-09-13 |
$14,653,000 |
| 11444166 |
Backside source/drain replacement for semiconductor devices with metallization on both sides |
Glenn A. Glass, Karthik Jambunathan, Chandra S. Mohapatra, Patrick Morrow, Mauro J. Kobrinsky |
2022-09-13 |
$14,653,000 |
| 11437472 |
Integrated circuit structures having germanium-based channels |
Siddharth Chouksey, Glenn A. Glass, Harold W. Kennel, Jack T. Kavalieros, Tahir Ghani +2 more |
2022-09-06 |
$12,766,000 |
| 11430787 |
Forming crystalline source/drain contacts on semiconductor devices |
Karthik Jambunathan, Scott Maddox, Cory Bomberger |
2022-08-30 |
$13,077,000 |
| 11430868 |
Buried etch-stop layer to help control transistor source/drain depth |
Rishabh Mehandru, Biswajeet Guha, Anupama Bowonder, Tahir Ghani, Stephen M. Cea |
2022-08-30 |
$13,077,000 |
| 11417655 |
High-mobility semiconductor source/drain spacer |
Gilbert Dewey, Matthew V. Metz, Tahir Ghani, Willy Rachmady, Chandra S. Mohapatra +2 more |
2022-08-16 |
$17,788,000 |
| 11411110 |
Methods of forming dislocation enhanced strain in NMOS and PMOS structures |
Michael Jackson, Glenn A. Glass, Saurabh Morarka, Chandra S. Mohapatra |
2022-08-09 |
$13,688,000 |
| 11411096 |
Source electrode and drain electrode protection for nanowire transistors |
Karthik Jambunathan, Biswajeet Guha, Tahir Ghani |
2022-08-09 |
$13,688,000 |
