Issued Patents 2022
Showing 26–43 of 43 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 11404575 | Diverse transistor channel materials enabled by thin, inverse-graded, germanium-based layer | Karthik Jambunathan, Cory Bomberger, Glenn A. Glass, Ju H. Nam, Tahir Ghani | 2022-08-02 |
| 11387320 | Transistors with high concentration of germanium | Glenn A. Glass, Tahir Ghani, Ravi Pillarisetty, Niloy Mukherjee, Jack T. Kavalieros +3 more | 2022-07-12 |
| 11374100 | Source or drain structures with contact etch stop layer | Cory Bomberger, Rishabh Mehandru, Anupama Bowonder, Biswajeet Guha, Tahir Ghani | 2022-06-28 |
| 11355621 | Non-planar semiconductor device including a replacement channel structure | Gilbert Dewey, Willy Rachmady, Sean T. Ma, Nicholas G. Minutillo, Tahir Ghani +2 more | 2022-06-07 |
| 11335600 | Integration method for finfet with tightly controlled multiple fin heights | Seiyon Kim, Jack T. Kavalieros, Glenn A. Glass, Karthik Jambunathan | 2022-05-17 |
| 11328988 | Top gate recessed channel CMOS thin film transistor in the back end of line and methods of fabrication | Gilbert Dewey, Ryan Keech, Cory Bomberger, Cheng-Ying Huang, Ashish Agrawal +1 more | 2022-05-10 |
| 11302777 | Integration methods to fabricate internal spacers for nanowire devices | Seiyon Kim, Kelin J. Kuhn, Tahir Ghani, Mark Armstrong, Rafael Rios +2 more | 2022-04-12 |
| 11296079 | PMOS and NMOS contacts in common trench | Glenn A. Glass | 2022-04-05 |
| 11276755 | Field effect transistors with gate electrode self-aligned to semiconductor fin | Sean T. Ma, Matthew V. Metz, Willy Rachmady, Gilbert Dewey, Chandra S. Mohapatra +2 more | 2022-03-15 |
| 11276694 | Transistor structure with indium phosphide channel | Willy Rachmady, Matthew V. Metz, Gilbert Dewey, Nicholas G. Minutillo, Cheng-Ying Huang +2 more | 2022-03-15 |
| 11264501 | Device, method and system for promoting channel stress in a NMOS transistor | Rishabh Mehandru, Karthik Jambunathan, Cory Bomberger | 2022-03-01 |
| 11257904 | Source-channel junction for III-V metal-oxide-semiconductor field effect transistors (MOSFETs) | Cheng-Ying Huang, Tahir Ghani, Jack T. Kavalieros, Harold W. Kennel, Gilbert Dewey +4 more | 2022-02-22 |
| 11251281 | Contact resistance reduction employing germanium overlayer pre-contact metalization | Glenn A. Glass, Tahir Ghani | 2022-02-15 |
| 11251302 | Epitaxial oxide plug for strained transistors | Karthik Jambunathan, Biswajeet Guha, Anupama Bowonder, Tahir Ghani | 2022-02-15 |
| 11244943 | Three-dimensional integrated circuits (3DICs) including bottom gate MOS transistors with monocrystalline channel material | Cheng-Ying Huang, Gilbert Dewey, Ashish Agrawal, Kimin Jun, Willy Rachmady +5 more | 2022-02-08 |
| 11232948 | Layered substrate for microelectronic devices | Glenn A. Glass | 2022-01-25 |
| 11233148 | Reducing band-to-band tunneling in semiconductor devices | Benjamin Chu-Kung, Jack T. Kavalieros, Seung Hoon Sung, Siddharth Chouksey, Harold W. Kennel +4 more | 2022-01-25 |
| 11222977 | Source/drain diffusion barrier for germanium NMOS transistors | Glenn A. Glass, Karthik Jambunathan, Cory Bomberger, Tahir Ghani, Jack T. Kavalieros +3 more | 2022-01-11 |