Issued Patents 2022
Showing 25 most recent of 28 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 11538808 | Structures and methods for memory cells | Aaron D. Lilak, Abhishek A. Sharma, Van H. Le, Seung Hoon Sung, Gilbert Dewey +3 more | 2022-12-27 |
| 11527613 | Removal of a bottom-most nanowire from a nanowire device stack | Aaron D. Lilak, Patrick H. Keys, Stephen M. Cea, Rishabh Mehandru | 2022-12-13 |
| 11527612 | Gate-all-around integrated circuit structures having vertically discrete source or drain structures | Glenn A. Glass, Anand S. Murthy, Biswajeet Guha, Dax M. Crum, Tahir Ghani +3 more | 2022-12-13 |
| 11522060 | Epitaxial layers on contact electrodes for thin- film transistors | Seung Hoon Sung, Justin R. Weber, Matthew V. Metz, Arnab Sen Gupta, Abhishek A. Sharma +8 more | 2022-12-06 |
| 11508847 | Transistor arrangements with metal gate cuts and recessed power rails | Andy Wei, Piyush Mohan Sinha | 2022-11-22 |
| 11508577 | Channel layer formation for III-V metal-oxide-semiconductor field effect transistors (MOSFETs) | Gilbert Dewey, Matthew V. Metz, Willy Rachmady, Nicholas G. Minutillo, Cheng-Ying Huang +4 more | 2022-11-22 |
| 11482524 | Gate spacing in integrated circuit structures | Guillaume Bouche, Andy Wei | 2022-10-25 |
| 11476366 | Transistor including wrap around source and drain contacts | Abhishek A. Sharma, Gilbert Dewey, Jack T. Kavalieros, Van H. Le | 2022-10-18 |
| 11469323 | Ferroelectric gate stack for band-to-band tunneling reduction | Gilbert Dewey, Willy Rachmady, Jack T. Kavalieros, Cheng-Ying Huang, Matthew V. Metz +2 more | 2022-10-11 |
| 11450738 | Source/drain regions in integrated circuit structures | Anand S. Murthy, Glenn A. Glass, Biswajeet Guha | 2022-09-20 |
| 11450736 | Source/drain regions in integrated circuit structures | Andy Wei, Guillaume Bouche | 2022-09-20 |
| 11444204 | Transistor device with channel recess structure and method of providing same | Abhishek A. Sharma, Van H. Le, Jack T. Kavalieros, Benjamin Chu-Kung | 2022-09-13 |
| 11444159 | Field effect transistors with wide bandgap materials | Gilbert Dewey, Willy Rachmady, Matthew V. Metz, Cheng-Ying Huang, Harold W. Kennel +3 more | 2022-09-13 |
| 11430866 | Device contact sizing in integrated circuit structures | Guillaume Bouche, Andy Wei | 2022-08-30 |
| 11424335 | Group III-V semiconductor devices having dual workfunction gate electrodes | Willy Rachmady, Gilbert Dewey, Cheng-Ying Huang, Dipanjan Basu | 2022-08-23 |
| 11404319 | Vertically stacked finFETs and shared gate patterning | Aaron D. Lilak, Justin R. Weber, Rishabh Mehandru, Stephen M. Cea, Patrick Morrow +1 more | 2022-08-02 |
| 11398560 | Contact electrodes and dielectric structures for thin film transistors | Gilbert Dewey, Van H. Le, Abhishek A. Sharma, Jack T. Kavalieros, Seung Hoon Sung +4 more | 2022-07-26 |
| 11367789 | Source/drain recess etch stop layers and bottom wide-gap cap for III-V MOSFETs | Cheng-Ying Huang, Willy Rachmady, Matthew V. Metz, Gilbert Dewey, Jack T. Kavalieros +1 more | 2022-06-21 |
| 11367722 | Stacked nanowire transistor structure with different channel geometries for stress | Aaron D. Lilak, Stephen M. Cea, Gilbert Dewey, Willy Rachmady, Roza Kotlyar +4 more | 2022-06-21 |
| 11362188 | Field effect transistors with reduced electric field by thickening dielectric on the drain side | Dipanjan Basu, Willy Rachmady, Jack T. Kavalieros | 2022-06-14 |
| 11362215 | Top-gate doped thin film transistor | Abhishek A. Sharma, Van H. Le, Jack T. Kavalieros, Gilbert Dewey | 2022-06-14 |
| 11355621 | Non-planar semiconductor device including a replacement channel structure | Gilbert Dewey, Willy Rachmady, Nicholas G. Minutillo, Tahir Ghani, Matthew V. Metz +2 more | 2022-06-07 |
| 11342409 | Isolation regions in integrated circuit structures | Guillaume Bouche, Andy Wei | 2022-05-24 |
| 11335789 | Channel structures for thin-film transistors | Abhishek A. Sharma, Cory E. Weber, Van H. Le | 2022-05-17 |
| 11335796 | Source to channel junction for III-V metal-oxide-semiconductor field effect transistors (MOSFETs) | Cheng-Ying Huang, Willy Rachmady, Matthew V. Metz, Gilbert Dewey, Jack T. Kavalieros | 2022-05-17 |