| 11522072 |
Vertical integration scheme and circuit elements architecture for area scaling of semiconductor devices |
Rishabh Mehandru, Patrick Morrow, Ranjith Kumar, Seiyon Kim, Stephen M. Cea +1 more |
2022-12-06 |
| 11515420 |
Contacts to n-type transistors with X-valley layer over L-valley channels |
Dax M. Crum, Rishabh Mehandru, Harold W. Kennel, Benjamin Chu-Kung |
2022-11-29 |
| 11398478 |
Semiconductor nanowire device having (111)-plane channel sidewalls |
Harold W. Kennel, Willy Rachmady, Gilbert Dewey |
2022-07-26 |
| 11342432 |
Gate-all-around integrated circuit structures having insulator fin on insulator substrate |
Aaron D. Lilak, Rishabh Mehandru, Willy Rachmady, Varun MISHRA |
2022-05-24 |
| 11335789 |
Channel structures for thin-film transistors |
Abhishek A. Sharma, Van H. Le, Sean T. Ma |
2022-05-17 |
| 11264453 |
Methods of doping fin structures of non-planar transistor devices |
Aaron D. Lilak, Szuya S. Liao, Aaron A. Budrevich |
2022-03-01 |
| 11222947 |
Methods of doping fin structures of non-planar transistor devices |
Aaron D. Lilak, Szuya S. Liao, Aaron A. Budrevich |
2022-01-11 |