| 11538806 |
Gate-all-around integrated circuit structures having high mobility |
Roza Kotlyar, Rishabh Mehandru, Biswajeet Guha, Dax M. Crum, Tahir Ghani |
2022-12-27 |
$12,365,000 |
| 11527640 |
Wrap-around contact structures for semiconductor nanowires and nanoribbons |
Rishabh Mehandru, Tahir Ghani, Biswajeet Guha |
2022-12-13 |
$11,573,000 |
| 11527613 |
Removal of a bottom-most nanowire from a nanowire device stack |
Aaron D. Lilak, Patrick H. Keys, Sean T. Ma, Rishabh Mehandru |
2022-12-13 |
$11,573,000 |
| 11527612 |
Gate-all-around integrated circuit structures having vertically discrete source or drain structures |
Glenn A. Glass, Anand S. Murthy, Biswajeet Guha, Dax M. Crum, Sean T. Ma +3 more |
2022-12-13 |
$11,573,000 |
| 11521968 |
Channel structures with sub-fin dopant diffusion blocking layers |
Cory Bomberger, Anand S. Murthy, Biswajeet Guha, Anupama Bowonder, Tahir Ghani |
2022-12-06 |
$14,727,000 |
| 11522072 |
Vertical integration scheme and circuit elements architecture for area scaling of semiconductor devices |
Rishabh Mehandru, Patrick Morrow, Ranjith Kumar, Cory E. Weber, Seiyon Kim +1 more |
2022-12-06 |
$14,727,000 |
| 11495672 |
Increased transistor source/drain contact area using sacrificial source/drain layer |
Dax M. Crum, Biswajeet Guha, William Hsu, Tahir Ghani |
2022-11-08 |
$15,080,000 |
| 11495683 |
Multiple strain states in epitaxial transistor channel through the incorporation of stress-relief defects within an underlying seed material |
Aaron D. Lilak, Patrick H. Keys, Sayed Hasan, Anupama Bowonder |
2022-11-08 |
$15,080,000 |
| 11430868 |
Buried etch-stop layer to help control transistor source/drain depth |
Rishabh Mehandru, Biswajeet Guha, Anupama Bowonder, Anand S. Murthy, Tahir Ghani |
2022-08-30 |
$13,077,000 |
| 11404319 |
Vertically stacked finFETs and shared gate patterning |
Aaron D. Lilak, Sean T. Ma, Justin R. Weber, Rishabh Mehandru, Patrick Morrow +1 more |
2022-08-02 |
$13,520,000 |
| 11374004 |
Pedestal fin structure for stacked transistor integration |
Aaron D. Lilak, Rishabh Mehandru, Anh Phan, Gilbert Dewey, Willy Rachmady +5 more |
2022-06-28 |
$15,065,000 |
| 11367722 |
Stacked nanowire transistor structure with different channel geometries for stress |
Aaron D. Lilak, Gilbert Dewey, Willy Rachmady, Roza Kotlyar, Rishabh Mehandru +4 more |
2022-06-21 |
$17,814,000 |
| 11335807 |
Isolation schemes for gate-all-around transistor devices |
Rishabh Mehandru, Biswajeet Guha, Tahir Ghani, William Hsu |
2022-05-17 |
$14,251,000 |
| 11276780 |
Transistor contact area enhancement |
Rishabh Mehandru, Tahir Ghani |
2022-03-15 |
$18,336,000 |
| 11276691 |
Gate-all-around integrated circuit structures having self-aligned source or drain undercut for varied widths |
Biswajeet Guha, Jun Sung Kang, Bruce Beattie, Tahir Ghani |
2022-03-15 |
$18,336,000 |
| 11264500 |
Device isolation |
Rishabh Mehandru, Tahir Ghani |
2022-03-01 |
$16,941,000 |
