Issued Patents 2022
Showing 25 most recent of 78 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 11538937 | Fin trim plug structures having an oxidation catalyst layer surrounded by a recessed dielectric material | Leonard P. GULER, Nick Lindert, Biswajeet Guha, Swaminathan Sivakumar | 2022-12-27 |
| 11538808 | Structures and methods for memory cells | Sean T. Ma, Aaron D. Lilak, Abhishek A. Sharma, Van H. Le, Seung Hoon Sung +3 more | 2022-12-27 |
| 11538806 | Gate-all-around integrated circuit structures having high mobility | Roza Kotlyar, Rishabh Mehandru, Stephen M. Cea, Biswajeet Guha, Dax M. Crum | 2022-12-27 |
| 11538905 | Nanowire transistors employing carbon-based layers | Glenn A. Glass, Anand S. Murthy, Nabil G. Mistkawi, Karthik Jambunathan | 2022-12-27 |
| 11527656 | Contact electrodes for vertical thin-film transistors | Van H. Le, Jack T. Kavalieros, Gilbert Dewey, Matthew V. Metz, Miriam Reshotko +4 more | 2022-12-13 |
| 11527612 | Gate-all-around integrated circuit structures having vertically discrete source or drain structures | Glenn A. Glass, Anand S. Murthy, Biswajeet Guha, Dax M. Crum, Sean T. Ma +3 more | 2022-12-13 |
| 11527640 | Wrap-around contact structures for semiconductor nanowires and nanoribbons | Rishabh Mehandru, Stephen M. Cea, Biswajeet Guha | 2022-12-13 |
| 11522059 | Metallic sealants in transistor arrangements | Abhishek A. Sharma, Jack T. Kavalieros, Gilbert Dewey, Van H. Le, Lawrence Wong +1 more | 2022-12-06 |
| 11522060 | Epitaxial layers on contact electrodes for thin- film transistors | Seung Hoon Sung, Justin R. Weber, Matthew V. Metz, Arnab Sen Gupta, Abhishek A. Sharma +8 more | 2022-12-06 |
| 11522072 | Vertical integration scheme and circuit elements architecture for area scaling of semiconductor devices | Rishabh Mehandru, Patrick Morrow, Ranjith Kumar, Cory E. Weber, Seiyon Kim +1 more | 2022-12-06 |
| 11522048 | Gate-all-around integrated circuit structures having source or drain structures with epitaxial nubs | Cory Bomberger, Anand S. Murthy, Mark Bohr, Biswajeet Guha | 2022-12-06 |
| 11521968 | Channel structures with sub-fin dopant diffusion blocking layers | Cory Bomberger, Anand S. Murthy, Stephen M. Cea, Biswajeet Guha, Anupama Bowonder | 2022-12-06 |
| 11508577 | Channel layer formation for III-V metal-oxide-semiconductor field effect transistors (MOSFETs) | Gilbert Dewey, Matthew V. Metz, Willy Rachmady, Sean T. Ma, Nicholas G. Minutillo +4 more | 2022-11-22 |
| 11495672 | Increased transistor source/drain contact area using sacrificial source/drain layer | Dax M. Crum, Biswajeet Guha, William Hsu, Stephen M. Cea | 2022-11-08 |
| 11495496 | Gate aligned contact and method to fabricate same | Oleg Golonzka, Swaminathan Sivakumar, Charles H. Wallace | 2022-11-08 |
| 11476344 | Contact resistance reduction employing germanium overlayer pre-contact metalization | Glenn A. Glass, Anand S. Murthy | 2022-10-18 |
| 11469299 | Gate-all-around integrated circuit structures having underlying dopant-diffusion blocking layers | Glenn A. Glass, Anand S. Murthy, Biswajeet Guha, Dax M. Crum, Patrick H. Keys +2 more | 2022-10-11 |
| 11469323 | Ferroelectric gate stack for band-to-band tunneling reduction | Gilbert Dewey, Willy Rachmady, Jack T. Kavalieros, Cheng-Ying Huang, Matthew V. Metz +2 more | 2022-10-11 |
| 11462541 | Memory cells based on vertical thin-film transistors | Juan G. Alzate Vinasco, Abhishek A. Sharma, Fatih Hamzaoglu, Bernhard Sell, Pei-Hua Wang +5 more | 2022-10-04 |
| 11462536 | Integrated circuit structures having asymmetric source and drain structures | Anupama Bowonder, Rishabh Mehandru, Mark Bohr | 2022-10-04 |
| 11456357 | Self-aligned gate edge architecture with alternate channel material | Biswajeet Guha, Anupama Bowonder, William Hsu, Szuya S. Liao, Mehmet O. Baykan | 2022-09-27 |
| 11456372 | Multi-height finfet device by selective oxidation | Seiyon Kim, Gopinath Bhimarasetti, Rafael Rios, Jack T. Kavalieros, Anand S. Murthy +1 more | 2022-09-27 |
| 11450669 | Stacked thin-film transistor based embedded dynamic random-access memory | Abhishek A. Sharma, Juan G. Alzate-Vinasco, Fatih Hamzaoglu, Bernhard Sell, Pei-Hua Wang +5 more | 2022-09-20 |
| 11450739 | Germanium-rich nanowire transistor with relaxed buffer layer | Glenn A. Glass, Anand S. Murthy, Cory Bomberger, Jack T. Kavalieros, Siddharth Chouksey +3 more | 2022-09-20 |
| 11450750 | Thin-film transistors with vertical channels | Nazila Haratipour, Jack T. Kavalieros, Gilbert Dewey, Benjamin Chu-Kung, Seung Hoon Sung +3 more | 2022-09-20 |