| 11532719 |
Transistors on heterogeneous bonding layers |
Kimin Jun, Jack T. Kavalieros, Gilbert Dewey, Willy Rachmady, Aaron D. Lilak +5 more |
2022-12-20 |
| 11532619 |
Transistor structures including a non-planar body having variable and complementary semiconductor and insulator portions |
Willy Rachmady, Gilbert Dewey, Jack T. Kavalieros, Caleb BARRETT, Jay P. Gupta +7 more |
2022-12-20 |
| 11508577 |
Channel layer formation for III-V metal-oxide-semiconductor field effect transistors (MOSFETs) |
Gilbert Dewey, Matthew V. Metz, Willy Rachmady, Sean T. Ma, Nicholas G. Minutillo +4 more |
2022-11-22 |
| 11482621 |
Vertically stacked CMOS with upfront M0 interconnect |
Willy Rachmady, Patrick Morrow, Aaron D. Lilak, Rishabh Mehandru, Gilbert Dewey +4 more |
2022-10-25 |
| 11469323 |
Ferroelectric gate stack for band-to-band tunneling reduction |
Gilbert Dewey, Willy Rachmady, Jack T. Kavalieros, Matthew V. Metz, Sean T. Ma +2 more |
2022-10-11 |
| 11444159 |
Field effect transistors with wide bandgap materials |
Sean T. Ma, Gilbert Dewey, Willy Rachmady, Matthew V. Metz, Harold W. Kennel +3 more |
2022-09-13 |
| 11437405 |
Transistors stacked on front-end p-type transistors |
Gilbert Dewey, Patrick Morrow, Aaron D. Lilak, Willy Rachmady, Anh Phan +4 more |
2022-09-06 |
| 11424335 |
Group III-V semiconductor devices having dual workfunction gate electrodes |
Sean T. Ma, Willy Rachmady, Gilbert Dewey, Dipanjan Basu |
2022-08-23 |
| 11404562 |
Tunneling field effect transistors |
Willy Rachmady, Matthew V. Metz, Ashish Agrawal, Benjamin Chu-Kung, Uygar E. Avci +2 more |
2022-08-02 |
| 11398479 |
Heterogeneous Ge/III-V CMOS transistor structures |
Willy Rachmady, Abhishek A. Sharma, Ravi Pillarisetty, Patrick Morrow, Rishabh Mehandru +2 more |
2022-07-26 |
| 11393818 |
Stacked transistors with Si PMOS and high mobility thin film transistor NMOS |
Gilbert Dewey, Ravi Pillarisetty, Abhishek A. Sharma, Aaron D. Lilak, Willy Rachmady +5 more |
2022-07-19 |
| 11387238 |
Non-silicon N-Type and P-Type stacked transistors for integrated circuit devices |
Gilbert Dewey, Patrick Morrow, Ravi Pillarisetty, Rishabh Mehandru, Willy Rachmady +1 more |
2022-07-12 |
| 11380684 |
Stacked transistor architecture including nanowire or nanoribbon thin film transistors |
Gilbert Dewey, Aaron D. Lilak, Jack T. Kavalieros, Willy Rachmady, Anh Phan +4 more |
2022-07-05 |
| 11367789 |
Source/drain recess etch stop layers and bottom wide-gap cap for III-V MOSFETs |
Willy Rachmady, Matthew V. Metz, Gilbert Dewey, Jack T. Kavalieros, Sean T. Ma +1 more |
2022-06-21 |
| 11367722 |
Stacked nanowire transistor structure with different channel geometries for stress |
Aaron D. Lilak, Stephen M. Cea, Gilbert Dewey, Willy Rachmady, Roza Kotlyar +4 more |
2022-06-21 |
| 11355621 |
Non-planar semiconductor device including a replacement channel structure |
Gilbert Dewey, Willy Rachmady, Sean T. Ma, Nicholas G. Minutillo, Tahir Ghani +2 more |
2022-06-07 |
| 11348916 |
Leave-behind protective layer having secondary purpose |
Aaron D. Lilak, Anh Phan, Ehren Mannebach, Stephanie A. Bojarski, Gilbert Dewey +2 more |
2022-05-31 |
| 11348919 |
Gate-all-around integrated circuit structures having depopulated channel structures using selective bottom-up approach |
Nicole K. Thomas, Ehren Mannebach, Marko Radosavljevic |
2022-05-31 |
| 11335793 |
Vertical tunneling field-effect transistors |
Jack T. Kavalieros, Ian A. Young, Matthew V. Metz, Willy Rachmady, Uygar E. Avci +2 more |
2022-05-17 |
| 11335796 |
Source to channel junction for III-V metal-oxide-semiconductor field effect transistors (MOSFETs) |
Willy Rachmady, Matthew V. Metz, Gilbert Dewey, Sean T. Ma, Jack T. Kavalieros |
2022-05-17 |
| 11328988 |
Top gate recessed channel CMOS thin film transistor in the back end of line and methods of fabrication |
Gilbert Dewey, Ryan Keech, Cory Bomberger, Ashish Agrawal, Willy Rachmady +1 more |
2022-05-10 |
| 11296203 |
Switching device having gate stack with low oxide growth |
Willy Rachmady, Gilbert Dewey |
2022-04-05 |
| 11276694 |
Transistor structure with indium phosphide channel |
Willy Rachmady, Matthew V. Metz, Gilbert Dewey, Nicholas G. Minutillo, Jack T. Kavalieros +2 more |
2022-03-15 |
| 11257904 |
Source-channel junction for III-V metal-oxide-semiconductor field effect transistors (MOSFETs) |
Tahir Ghani, Jack T. Kavalieros, Anand S. Murthy, Harold W. Kennel, Gilbert Dewey +4 more |
2022-02-22 |
| 11244943 |
Three-dimensional integrated circuits (3DICs) including bottom gate MOS transistors with monocrystalline channel material |
Gilbert Dewey, Ashish Agrawal, Kimin Jun, Willy Rachmady, Zachary Geiger +5 more |
2022-02-08 |