| 11527656 |
Contact electrodes for vertical thin-film transistors |
Van H. Le, Tahir Ghani, Jack T. Kavalieros, Gilbert Dewey, Miriam Reshotko +4 more |
2022-12-13 |
| 11522060 |
Epitaxial layers on contact electrodes for thin- film transistors |
Seung Hoon Sung, Justin R. Weber, Arnab Sen Gupta, Abhishek A. Sharma, Benjamin Chu-Kung +8 more |
2022-12-06 |
| 11508577 |
Channel layer formation for III-V metal-oxide-semiconductor field effect transistors (MOSFETs) |
Gilbert Dewey, Willy Rachmady, Sean T. Ma, Nicholas G. Minutillo, Cheng-Ying Huang +4 more |
2022-11-22 |
| 11476338 |
Aluminum indium phosphide subfin germanium channel transistors |
Willy Rachmady, Harold W. Kennel, Van H. Le, Benjamin Chu-Kung, Jack T. Kavalieros +1 more |
2022-10-18 |
| 11469323 |
Ferroelectric gate stack for band-to-band tunneling reduction |
Gilbert Dewey, Willy Rachmady, Jack T. Kavalieros, Cheng-Ying Huang, Sean T. Ma +2 more |
2022-10-11 |
| 11450527 |
Engineering tensile strain buffer in art for high quality Ge channel |
Van H. Le, Benjamin Chu-Kung, Willy Rachmady, Marc C. French, Seung Hoon Sung +2 more |
2022-09-20 |
| 11444024 |
Subtractively patterned interconnect structures for integrated circuits |
Kevin Lin, Noriyuki Sato, Tristan A. Tronic, Michael Christenson, Christopher J. Jezewski +10 more |
2022-09-13 |
| 11444205 |
Contact stacks to reduce hydrogen in thin film transistor |
Arnab Sen Gupta, Benjamin Chu-Kung, Abhishek A. Sharma, Van H. Le, Miriam Reshotko +7 more |
2022-09-13 |
| 11444159 |
Field effect transistors with wide bandgap materials |
Sean T. Ma, Gilbert Dewey, Willy Rachmady, Cheng-Ying Huang, Harold W. Kennel +3 more |
2022-09-13 |
| 11417770 |
Vertical thin-film transistors between metal layers |
Abhishek A. Sharma, Nazila Haratipour, Seung Hoon Sung, Benjamin Chu-Kung, Gilbert Dewey +5 more |
2022-08-16 |
| 11417655 |
High-mobility semiconductor source/drain spacer |
Gilbert Dewey, Anand S. Murthy, Tahir Ghani, Willy Rachmady, Chandra S. Mohapatra +2 more |
2022-08-16 |
| 11404562 |
Tunneling field effect transistors |
Cheng-Ying Huang, Willy Rachmady, Ashish Agrawal, Benjamin Chu-Kung, Uygar E. Avci +2 more |
2022-08-02 |
| 11367789 |
Source/drain recess etch stop layers and bottom wide-gap cap for III-V MOSFETs |
Cheng-Ying Huang, Willy Rachmady, Gilbert Dewey, Jack T. Kavalieros, Sean T. Ma +1 more |
2022-06-21 |
| 11355621 |
Non-planar semiconductor device including a replacement channel structure |
Gilbert Dewey, Willy Rachmady, Sean T. Ma, Nicholas G. Minutillo, Tahir Ghani +2 more |
2022-06-07 |
| 11335796 |
Source to channel junction for III-V metal-oxide-semiconductor field effect transistors (MOSFETs) |
Cheng-Ying Huang, Willy Rachmady, Gilbert Dewey, Sean T. Ma, Jack T. Kavalieros |
2022-05-17 |
| 11335793 |
Vertical tunneling field-effect transistors |
Cheng-Ying Huang, Jack T. Kavalieros, Ian A. Young, Willy Rachmady, Uygar E. Avci +2 more |
2022-05-17 |
| 11296229 |
Vertical thin film transistors having self-aligned contacts |
Abhishek A. Sharma, Yih Wang, Van H. Le, Jack T. Kavalieros, Tahir Ghani +5 more |
2022-04-05 |
| 11276694 |
Transistor structure with indium phosphide channel |
Willy Rachmady, Gilbert Dewey, Nicholas G. Minutillo, Cheng-Ying Huang, Jack T. Kavalieros +2 more |
2022-03-15 |
| 11276755 |
Field effect transistors with gate electrode self-aligned to semiconductor fin |
Sean T. Ma, Willy Rachmady, Gilbert Dewey, Chandra S. Mohapatra, Jack T. Kavalieros +2 more |
2022-03-15 |
| 11257904 |
Source-channel junction for III-V metal-oxide-semiconductor field effect transistors (MOSFETs) |
Cheng-Ying Huang, Tahir Ghani, Jack T. Kavalieros, Anand S. Murthy, Harold W. Kennel +4 more |
2022-02-22 |