Issued Patents 2022
Showing 1–25 of 30 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 11532635 | High-density low voltage multi-element ferroelectric gain memory bit-cell with pillar capacitors | Rajeev Kumar Dokania, Tanay Gosavi, Pratyush Pandey, Debo Olaosebikan, Amrita Mathuriya +1 more | 2022-12-20 |
| 11532342 | Non-linear polar material based differential multi-memory element bit-cell | Rajeev Kumar Dokania, Tanay Gosavi, Pratyush Pandey, Debo Olaosebikan, Amrita Mathuriya +1 more | 2022-12-20 |
| 11527278 | Non-linear polar material based memory bit-cell with multi-level storage by applying different time pulse widths | Rajeev Kumar Dokania, Tanay Gosavi, Pratyush Pandey, Debo Olaosebikan, Amrita Mathuriya +1 more | 2022-12-13 |
| 11527277 | High-density low voltage ferroelectric memory bit-cell | Rajeev Kumar Dokania, Tanay Gosavi, Pratyush Pandey, Debo Olaosebikan, Amrita Mathuriya +1 more | 2022-12-13 |
| 11521666 | High-density low voltage multi-element ferroelectric gain memory bit-cell with planar capacitors | Rajeev Kumar Dokania, Tanay Gosavi, Pratyush Pandey, Debo Olaosebikan, Amrita Mathuriya +1 more | 2022-12-06 |
| 11521667 | Stacked ferroelectric planar capacitors in a memory bit-cell | Rajeev Kumar Dokania, Tanay Gosavi, Pratyush Pandey, Debo Olaosebikan, Amrita Mathuriya +1 more | 2022-12-06 |
| 11514967 | Non-linear polar material based differential multi-memory element gain bit-cell | Rajeev Kumar Dokania, Tanay Gosavi, Pratyush Pandey, Debo Olaosebikan, Amrita Mathuriya +1 more | 2022-11-29 |
| 11514966 | Non-linear polar material based multi-memory element bit-cell with multi-level storage | Rajeev Kumar Dokania, Tanay Gosavi, Pratyush Pandey, Debo Olaosebikan, Amrita Mathuriya +1 more | 2022-11-29 |
| 11508903 | Spin orbit torque device with insertion layer between spin orbit torque electrode and free layer for improved performance | Angeline Smith, Ian A. Young, Kaan Oguz, Sasikanth Manipatruni, Christopher J. Wiegand +4 more | 2022-11-22 |
| 11501813 | Method of forming stacked ferroelectric non- planar capacitors in a memory bit-cell | Rajeev Kumar Dokania, Tanay Gosavi, Pratyush Pandey, Debo Olaosebikan, Amrita Mathuriya +1 more | 2022-11-15 |
| 11487599 | Information processing apparatus and information processing method | Takuo Kanamitsu | 2022-11-01 |
| 11476408 | Spin orbit torque (SOT) memory devices with enhanced magnetic anisotropy and methods of fabrication | Angeline Smith, Sasikanth Manipatruni, Christopher J. Wiegand, Tofizur Rahman, Benjamin Buford | 2022-10-18 |
| 11476412 | Perpendicular exchange bias with antiferromagnet for spin orbit coupling based memory | Tanay Gosavi, Sasikanth Manipatruni, Kaan Oguz, Kevin P. O'Brien, Benjamin Buford +4 more | 2022-10-18 |
| 11462678 | Perpendicular spin transfer torque memory (pSTTM) devices with enhanced thermal stability and methods to form the same | Kevin P. O'Brien, Kaan Oguz, Charles C. Kuo, Mark L. Doczy | 2022-10-04 |
| 11444237 | Spin orbit torque (SOT) memory devices and methods of fabrication | Tanay Gosavi, Gary Allen, Sasikanth Manipatruni, Kaan Oguz, Kevin P. O'Brien +5 more | 2022-09-13 |
| 11444024 | Subtractively patterned interconnect structures for integrated circuits | Kevin Lin, Tristan A. Tronic, Michael Christenson, Christopher J. Jezewski, Jiun-Ruey Chen +10 more | 2022-09-13 |
| 11430943 | Magnetic tunnel junction (MTJ) devices with a synthetic antiferromagnet (SAF) structure including a magnetic skyrmion | Kevin P. O'Brien, Kaan Oguz, Charles C. Kuo, Mark L. Doczy | 2022-08-30 |
| 11423967 | Stacked ferroelectric non-planar capacitors in a memory bit-cell | Rajeev Kumar Dokania, Tanay Gosavi, Pratyush Pandey, Debo Olaosebikan, Amrita Mathuriya +1 more | 2022-08-23 |
| 11417830 | Magnetically doped spin orbit torque electrode for perpendicular magnetic random access memory | Tanay Gosavi, Sasikanth Manipatruni, Chia-Ching Lin, Gary Allen, Kaan Oguz +3 more | 2022-08-16 |
| 11404482 | Self-aligned repeatedly stackable 3D vertical RRAM | Kevin P. O'Brien, Eungnak Han, Manish Chandhok, Gurpreet Singh, Nafees Kabir +4 more | 2022-08-02 |
| 11386951 | Multi-level magnetic tunnel junction (MTJ) devices including mobile magnetic skyrmions or ferromagnetic domains | Kevin P. O'Brien, Brian S. Doyle, Kaan Oguz, Charles C. Kuo, Mark L. Doczy | 2022-07-12 |
| 11374164 | Multi-layer spin orbit torque electrodes for perpendicular magnetic random access memory | Tanay Gosavi, Sasikanth Manipatruni, Chia-Ching Lin, Kaan Oguz, Christopher J. Wiegand +5 more | 2022-06-28 |
| 11367749 | Spin orbit torque (SOT) memory devices and their methods of fabrication | Angeline Smith, Tanay Gosavi, Sasikanth Manipatruni, Kaan Oguz, Kevin P. O'Brien +7 more | 2022-06-21 |
| 11362263 | Spin orbit torque (SOT) memory devices and methods of fabrication | Tanay Gosavi, Justin S. Brockman, Sasikanth Manipatruni, Kaan Oguz, Kevin P. O'Brien +4 more | 2022-06-14 |
| 11348970 | Spin orbit torque (SOT) memory device with self-aligned contacts and their methods of fabrication | Kevin P. O'Brien, Benjamin Buford, Kaan Oguz, Charles C. Kuo, Mark L. Doczy | 2022-05-31 |