| 11532635 |
High-density low voltage multi-element ferroelectric gain memory bit-cell with pillar capacitors |
Rajeev Kumar Dokania, Tanay Gosavi, Pratyush Pandey, Debo Olaosebikan, Amrita Mathuriya +1 more |
2022-12-20 |
|
| 11532342 |
Non-linear polar material based differential multi-memory element bit-cell |
Rajeev Kumar Dokania, Tanay Gosavi, Pratyush Pandey, Debo Olaosebikan, Amrita Mathuriya +1 more |
2022-12-20 |
|
| 11527278 |
Non-linear polar material based memory bit-cell with multi-level storage by applying different time pulse widths |
Rajeev Kumar Dokania, Tanay Gosavi, Pratyush Pandey, Debo Olaosebikan, Amrita Mathuriya +1 more |
2022-12-13 |
|
| 11527277 |
High-density low voltage ferroelectric memory bit-cell |
Rajeev Kumar Dokania, Tanay Gosavi, Pratyush Pandey, Debo Olaosebikan, Amrita Mathuriya +1 more |
2022-12-13 |
|
| 11521666 |
High-density low voltage multi-element ferroelectric gain memory bit-cell with planar capacitors |
Rajeev Kumar Dokania, Tanay Gosavi, Pratyush Pandey, Debo Olaosebikan, Amrita Mathuriya +1 more |
2022-12-06 |
|
| 11521667 |
Stacked ferroelectric planar capacitors in a memory bit-cell |
Rajeev Kumar Dokania, Tanay Gosavi, Pratyush Pandey, Debo Olaosebikan, Amrita Mathuriya +1 more |
2022-12-06 |
|
| 11514967 |
Non-linear polar material based differential multi-memory element gain bit-cell |
Rajeev Kumar Dokania, Tanay Gosavi, Pratyush Pandey, Debo Olaosebikan, Amrita Mathuriya +1 more |
2022-11-29 |
|
| 11514966 |
Non-linear polar material based multi-memory element bit-cell with multi-level storage |
Rajeev Kumar Dokania, Tanay Gosavi, Pratyush Pandey, Debo Olaosebikan, Amrita Mathuriya +1 more |
2022-11-29 |
|
| 11508903 |
Spin orbit torque device with insertion layer between spin orbit torque electrode and free layer for improved performance |
Angeline Smith, Ian A. Young, Kaan Oguz, Sasikanth Manipatruni, Christopher J. Wiegand +4 more |
2022-11-22 |
$12,862,000 |
| 11501813 |
Method of forming stacked ferroelectric non- planar capacitors in a memory bit-cell |
Rajeev Kumar Dokania, Tanay Gosavi, Pratyush Pandey, Debo Olaosebikan, Amrita Mathuriya +1 more |
2022-11-15 |
|
| 11487599 |
Information processing apparatus and information processing method |
Takuo Kanamitsu |
2022-11-01 |
|
| 11476408 |
Spin orbit torque (SOT) memory devices with enhanced magnetic anisotropy and methods of fabrication |
Angeline Smith, Sasikanth Manipatruni, Christopher J. Wiegand, Tofizur Rahman, Benjamin Buford |
2022-10-18 |
$11,317,000 |
| 11476412 |
Perpendicular exchange bias with antiferromagnet for spin orbit coupling based memory |
Tanay Gosavi, Sasikanth Manipatruni, Kaan Oguz, Kevin P. O'Brien, Benjamin Buford +4 more |
2022-10-18 |
$11,317,000 |
| 11462678 |
Perpendicular spin transfer torque memory (pSTTM) devices with enhanced thermal stability and methods to form the same |
Kevin P. O'Brien, Kaan Oguz, Charles C. Kuo, Mark L. Doczy |
2022-10-04 |
$13,460,000 |
| 11444237 |
Spin orbit torque (SOT) memory devices and methods of fabrication |
Tanay Gosavi, Gary Allen, Sasikanth Manipatruni, Kaan Oguz, Kevin P. O'Brien +5 more |
2022-09-13 |
$14,653,000 |
| 11444024 |
Subtractively patterned interconnect structures for integrated circuits |
Kevin Lin, Tristan A. Tronic, Michael Christenson, Christopher J. Jezewski, Jiun-Ruey Chen +10 more |
2022-09-13 |
$14,653,000 |
| 11430943 |
Magnetic tunnel junction (MTJ) devices with a synthetic antiferromagnet (SAF) structure including a magnetic skyrmion |
Kevin P. O'Brien, Kaan Oguz, Charles C. Kuo, Mark L. Doczy |
2022-08-30 |
$13,077,000 |
| 11423967 |
Stacked ferroelectric non-planar capacitors in a memory bit-cell |
Rajeev Kumar Dokania, Tanay Gosavi, Pratyush Pandey, Debo Olaosebikan, Amrita Mathuriya +1 more |
2022-08-23 |
|
| 11417830 |
Magnetically doped spin orbit torque electrode for perpendicular magnetic random access memory |
Tanay Gosavi, Sasikanth Manipatruni, Chia-Ching Lin, Gary Allen, Kaan Oguz +3 more |
2022-08-16 |
$17,788,000 |
| 11404482 |
Self-aligned repeatedly stackable 3D vertical RRAM |
Kevin P. O'Brien, Eungnak Han, Manish Chandhok, Gurpreet Singh, Nafees Kabir +4 more |
2022-08-02 |
$13,520,000 |
| 11386951 |
Multi-level magnetic tunnel junction (MTJ) devices including mobile magnetic skyrmions or ferromagnetic domains |
Kevin P. O'Brien, Brian S. Doyle, Kaan Oguz, Charles C. Kuo, Mark L. Doczy |
2022-07-12 |
$13,106,000 |
| 11374164 |
Multi-layer spin orbit torque electrodes for perpendicular magnetic random access memory |
Tanay Gosavi, Sasikanth Manipatruni, Chia-Ching Lin, Kaan Oguz, Christopher J. Wiegand +5 more |
2022-06-28 |
$15,065,000 |
| 11367749 |
Spin orbit torque (SOT) memory devices and their methods of fabrication |
Angeline Smith, Tanay Gosavi, Sasikanth Manipatruni, Kaan Oguz, Kevin P. O'Brien +7 more |
2022-06-21 |
$17,814,000 |
| 11362263 |
Spin orbit torque (SOT) memory devices and methods of fabrication |
Tanay Gosavi, Justin S. Brockman, Sasikanth Manipatruni, Kaan Oguz, Kevin P. O'Brien +4 more |
2022-06-14 |
$16,878,000 |
| 11348970 |
Spin orbit torque (SOT) memory device with self-aligned contacts and their methods of fabrication |
Kevin P. O'Brien, Benjamin Buford, Kaan Oguz, Charles C. Kuo, Mark L. Doczy |
2022-05-31 |
$16,893,000 |
