Issued Patents 2022
Showing 1–25 of 83 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 11538514 | Writing scheme for 1TnC ferroelectric memory bit-cell with plate-lines parallel to a bit-line and with individual switches on the plate-lines of the bit-cell | Rajeev Kumar Dokania, Amrita Mathuriya | 2022-12-27 |
| 11539368 | Majority logic gate with input paraelectric capacitors | Rafael Rios, Ikenna Odinaka, Robert Menezes, Rajeev Kumar Dokania, Ramamoorthy Ramesh +1 more | 2022-12-27 |
| 11532342 | Non-linear polar material based differential multi-memory element bit-cell | Rajeev Kumar Dokania, Noriyuki Sato, Tanay Gosavi, Pratyush Pandey, Debo Olaosebikan +1 more | 2022-12-20 |
| 11532344 | Reading scheme for 1TNC ferroelectric memory bit-cell with plate-line parallel to bit-line and with individual switches on plate-lines of the bit-cell | Rajeev Kumar Dokania, Amrita Mathuriya | 2022-12-20 |
| 11532635 | High-density low voltage multi-element ferroelectric gain memory bit-cell with pillar capacitors | Rajeev Kumar Dokania, Noriyuki Sato, Tanay Gosavi, Pratyush Pandey, Debo Olaosebikan +1 more | 2022-12-20 |
| 11527278 | Non-linear polar material based memory bit-cell with multi-level storage by applying different time pulse widths | Rajeev Kumar Dokania, Noriyuki Sato, Tanay Gosavi, Pratyush Pandey, Debo Olaosebikan +1 more | 2022-12-13 |
| 11527277 | High-density low voltage ferroelectric memory bit-cell | Rajeev Kumar Dokania, Noriyuki Sato, Tanay Gosavi, Pratyush Pandey, Debo Olaosebikan +1 more | 2022-12-13 |
| 11521667 | Stacked ferroelectric planar capacitors in a memory bit-cell | Rajeev Kumar Dokania, Noriyuki Sato, Tanay Gosavi, Pratyush Pandey, Debo Olaosebikan +1 more | 2022-12-06 |
| 11521953 | 3D stacked ferroelectric compute and memory | Rajeev Kumar Dokania, Amrita Mathuriya, Ramamoorthy Ramesh | 2022-12-06 |
| 11522012 | Deep in memory architecture using resistive switches | Jack T. Kavalieros, Ian A. Young, Ram Krishnamurthy, Ravi Pillarisetty, Gregory K. Chen +7 more | 2022-12-06 |
| 11522044 | Ferroelectric capacitor integrated with logic | Gaurav Thareja, Rajeev Kumar Dokania, Ramamoorthy Ramesh, Amrita Mathuriya | 2022-12-06 |
| 11521668 | Pulsing scheme for a ferroelectric memory bit-cell with plate-line parallel to word-line to minimize read or write disturb effects | Rajeev Kumar Dokania, Amrita Mathuriya | 2022-12-06 |
| 11521666 | High-density low voltage multi-element ferroelectric gain memory bit-cell with planar capacitors | Rajeev Kumar Dokania, Noriyuki Sato, Tanay Gosavi, Pratyush Pandey, Debo Olaosebikan +1 more | 2022-12-06 |
| 11514967 | Non-linear polar material based differential multi-memory element gain bit-cell | Rajeev Kumar Dokania, Noriyuki Sato, Tanay Gosavi, Pratyush Pandey, Debo Olaosebikan +1 more | 2022-11-29 |
| 11514966 | Non-linear polar material based multi-memory element bit-cell with multi-level storage | Rajeev Kumar Dokania, Noriyuki Sato, Tanay Gosavi, Pratyush Pandey, Debo Olaosebikan +1 more | 2022-11-29 |
| 11508903 | Spin orbit torque device with insertion layer between spin orbit torque electrode and free layer for improved performance | Angeline Smith, Ian A. Young, Kaan Oguz, Christopher J. Wiegand, Kevin P. O'Brien +4 more | 2022-11-22 |
| 11509308 | Sequential circuit without feedback or memory element | Amrita Mathuriya, Ikenna Odinaka, Rajeev Kumar Dokania, Rafael Rios | 2022-11-22 |
| 11502691 | Method for using and forming low power ferroelectric based majority logic gate adder | Yuan-Sheng Fang, Robert Menezes, Rajeev Kumar Dokania, Gaurav Thareja, Ramamoorthy Ramesh +1 more | 2022-11-15 |
| 11502188 | Apparatus and method for boosting signal in magnetoelectric spin orbit logic | Chia-Ching Lin, Dmitri E. Nikonov, Ian A. Young, Benjamin Buford, Tanay Gosavi +2 more | 2022-11-15 |
| 11501813 | Method of forming stacked ferroelectric non- planar capacitors in a memory bit-cell | Rajeev Kumar Dokania, Noriyuki Sato, Tanay Gosavi, Pratyush Pandey, Debo Olaosebikan +1 more | 2022-11-15 |
| 11502696 | In-memory analog neural cache | Amrita Mathuriya, Victor W. Lee, Huseyin Ekin Sumbul, Gregory K. Chen, Raghavan Kumar +4 more | 2022-11-15 |
| 11482528 | Pillar capacitor and method of fabricating such | Gaurav Thareja, Rajeev Kumar Dokania, Ramamoorthy Ramesh, Amrita Mathuriya | 2022-10-25 |
| 11482529 | High-density low voltage non-volatile memory with unidirectional plate-line and bit-line and pillar capacitor | Rajeev Kumar Dokania, Ramamoorthy Ramesh | 2022-10-25 |
| 11482990 | Vectored sequential circuit with ferroelectric or paraelectric material | Amrita Mathuriya, Ikenna Odinaka, Rajeev Kumar Dokania, Rafael Rios | 2022-10-25 |
| 11482270 | Pulsing scheme for a ferroelectric memory bit-cell to minimize read or write disturb effect and refresh logic | Rajeev Kumar Dokania, Amrita Mathuriya | 2022-10-25 |