| 11532635 |
High-density low voltage multi-element ferroelectric gain memory bit-cell with pillar capacitors |
Rajeev Kumar Dokania, Noriyuki Sato, Pratyush Pandey, Debo Olaosebikan, Amrita Mathuriya +1 more |
2022-12-20 |
|
| 11532342 |
Non-linear polar material based differential multi-memory element bit-cell |
Rajeev Kumar Dokania, Noriyuki Sato, Pratyush Pandey, Debo Olaosebikan, Amrita Mathuriya +1 more |
2022-12-20 |
|
| 11527278 |
Non-linear polar material based memory bit-cell with multi-level storage by applying different time pulse widths |
Rajeev Kumar Dokania, Noriyuki Sato, Pratyush Pandey, Debo Olaosebikan, Amrita Mathuriya +1 more |
2022-12-13 |
|
| 11527277 |
High-density low voltage ferroelectric memory bit-cell |
Rajeev Kumar Dokania, Noriyuki Sato, Pratyush Pandey, Debo Olaosebikan, Amrita Mathuriya +1 more |
2022-12-13 |
|
| 11521666 |
High-density low voltage multi-element ferroelectric gain memory bit-cell with planar capacitors |
Rajeev Kumar Dokania, Noriyuki Sato, Pratyush Pandey, Debo Olaosebikan, Amrita Mathuriya +1 more |
2022-12-06 |
|
| 11521667 |
Stacked ferroelectric planar capacitors in a memory bit-cell |
Rajeev Kumar Dokania, Noriyuki Sato, Pratyush Pandey, Debo Olaosebikan, Amrita Mathuriya +1 more |
2022-12-06 |
|
| 11514966 |
Non-linear polar material based multi-memory element bit-cell with multi-level storage |
Rajeev Kumar Dokania, Noriyuki Sato, Pratyush Pandey, Debo Olaosebikan, Amrita Mathuriya +1 more |
2022-11-29 |
|
| 11514967 |
Non-linear polar material based differential multi-memory element gain bit-cell |
Rajeev Kumar Dokania, Noriyuki Sato, Pratyush Pandey, Debo Olaosebikan, Amrita Mathuriya +1 more |
2022-11-29 |
|
| 11508903 |
Spin orbit torque device with insertion layer between spin orbit torque electrode and free layer for improved performance |
Angeline Smith, Ian A. Young, Kaan Oguz, Sasikanth Manipatruni, Christopher J. Wiegand +4 more |
2022-11-22 |
$12,862,000 |
| 11502188 |
Apparatus and method for boosting signal in magnetoelectric spin orbit logic |
Chia-Ching Lin, Sasikanth Manipatruni, Dmitri E. Nikonov, Ian A. Young, Benjamin Buford +2 more |
2022-11-15 |
$16,955,000 |
| 11501813 |
Method of forming stacked ferroelectric non- planar capacitors in a memory bit-cell |
Rajeev Kumar Dokania, Noriyuki Sato, Pratyush Pandey, Debo Olaosebikan, Amrita Mathuriya +1 more |
2022-11-15 |
|
| 11476412 |
Perpendicular exchange bias with antiferromagnet for spin orbit coupling based memory |
Sasikanth Manipatruni, Kaan Oguz, Noriyuki Sato, Kevin P. O'Brien, Benjamin Buford +4 more |
2022-10-18 |
$11,317,000 |
| 11444237 |
Spin orbit torque (SOT) memory devices and methods of fabrication |
Noriyuki Sato, Gary Allen, Sasikanth Manipatruni, Kaan Oguz, Kevin P. O'Brien +5 more |
2022-09-13 |
$14,653,000 |
| 11430942 |
Multilayer free magnetic layer structure for spin-based magnetic memory |
Kaan Oguz, Sasikanth Manipatruni, Chia-Ching Lin, Gary Allen |
2022-08-30 |
$13,077,000 |
| 11423967 |
Stacked ferroelectric non-planar capacitors in a memory bit-cell |
Rajeev Kumar Dokania, Noriyuki Sato, Pratyush Pandey, Debo Olaosebikan, Amrita Mathuriya +1 more |
2022-08-23 |
|
| 11417830 |
Magnetically doped spin orbit torque electrode for perpendicular magnetic random access memory |
Sasikanth Manipatruni, Chia-Ching Lin, Gary Allen, Kaan Oguz, Kevin P. O'Brien +3 more |
2022-08-16 |
$17,788,000 |
| 11411046 |
Semiconductor device heat extraction by spin thermoelectrics |
Sasikanth Manipatruni, Dmitri E. Nikonov, Ian A. Young |
2022-08-09 |
$13,688,000 |
| 11411047 |
Stacked transistor bit-cell for magnetic random access memory |
Sasikanth Manipatruni, Christopher J. Wiegand, Ian A. Young |
2022-08-09 |
$13,688,000 |
| 11398596 |
Magnetic tunnel junction (MTJ) integration on backside of silicon |
Sasikanth Manipatruni, Ian A. Young, Dmitri E. Nikonov |
2022-07-26 |
$27,041,000 |
| 11398562 |
Magnetoelectric spin orbit logic transistor with a spin filter |
Chia-Ching Lin, Sasikanth Manipatruni, Sou-Chi Chang, Dmitri E. Nikonov, Ian A. Young |
2022-07-26 |
$27,041,000 |
| 11393515 |
Transition metal dichalcogenide based spin orbit torque memory device |
Chia-Ching Lin, Sasikanth Manipatruni, Dmitri E. Nikonov, Benjamin Buford, Kaan Oguz +2 more |
2022-07-19 |
$11,394,000 |
| 11374164 |
Multi-layer spin orbit torque electrodes for perpendicular magnetic random access memory |
Sasikanth Manipatruni, Chia-Ching Lin, Kaan Oguz, Christopher J. Wiegand, Angeline Smith +5 more |
2022-06-28 |
$15,065,000 |
| 11374163 |
Spin orbit memory with multiferroic material |
Chia-Ching Lin, Sasikanth Manipatruni, Dmitri E. Nikonov, Ian A. Young |
2022-06-28 |
$15,065,000 |
| 11367749 |
Spin orbit torque (SOT) memory devices and their methods of fabrication |
Noriyuki Sato, Angeline Smith, Sasikanth Manipatruni, Kaan Oguz, Kevin P. O'Brien +7 more |
2022-06-21 |
$17,814,000 |
| 11362263 |
Spin orbit torque (SOT) memory devices and methods of fabrication |
Noriyuki Sato, Justin S. Brockman, Sasikanth Manipatruni, Kaan Oguz, Kevin P. O'Brien +4 more |
2022-06-14 |
$16,878,000 |
