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Spin orbit torque device with insertion layer between spin orbit torque electrode and free layer for improved performance |
Angeline Smith, Ian A. Young, Kaan Oguz, Sasikanth Manipatruni, Christopher J. Wiegand +4 more |
2022-11-22 |
| 11476412 |
Perpendicular exchange bias with antiferromagnet for spin orbit coupling based memory |
Tanay Gosavi, Sasikanth Manipatruni, Kaan Oguz, Noriyuki Sato, Benjamin Buford +4 more |
2022-10-18 |
| 11462678 |
Perpendicular spin transfer torque memory (pSTTM) devices with enhanced thermal stability and methods to form the same |
Kaan Oguz, Charles C. Kuo, Mark L. Doczy, Noriyuki Sato |
2022-10-04 |
| 11444237 |
Spin orbit torque (SOT) memory devices and methods of fabrication |
Noriyuki Sato, Tanay Gosavi, Gary Allen, Sasikanth Manipatruni, Kaan Oguz +5 more |
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| 11437567 |
Perpendicular spin transfer torque magnetic mechanism |
Justin S. Brockman, Christopher J. Wiegand, MD Tofizur Rahman, Daniel Ouelette, Angeline Smith +7 more |
2022-09-06 |
| 11430943 |
Magnetic tunnel junction (MTJ) devices with a synthetic antiferromagnet (SAF) structure including a magnetic skyrmion |
Kaan Oguz, Noriyuki Sato, Charles C. Kuo, Mark L. Doczy |
2022-08-30 |
| 11417830 |
Magnetically doped spin orbit torque electrode for perpendicular magnetic random access memory |
Tanay Gosavi, Sasikanth Manipatruni, Chia-Ching Lin, Gary Allen, Kaan Oguz +3 more |
2022-08-16 |
| 11404630 |
Perpendicular spin transfer torque memory (pSTTM) devices with enhanced stability and method to form same |
MD Tofizur Rahman, Christopher J. Wiegand, Kaan Oguz, Justin S. Brockman, Daniel G. Ouellette +5 more |
2022-08-02 |
| 11404482 |
Self-aligned repeatedly stackable 3D vertical RRAM |
Noriyuki Sato, Eungnak Han, Manish Chandhok, Gurpreet Singh, Nafees Kabir +4 more |
2022-08-02 |
| 11386951 |
Multi-level magnetic tunnel junction (MTJ) devices including mobile magnetic skyrmions or ferromagnetic domains |
Brian S. Doyle, Kaan Oguz, Noriyuki Sato, Charles C. Kuo, Mark L. Doczy |
2022-07-12 |
| 11374164 |
Multi-layer spin orbit torque electrodes for perpendicular magnetic random access memory |
Tanay Gosavi, Sasikanth Manipatruni, Chia-Ching Lin, Kaan Oguz, Christopher J. Wiegand +5 more |
2022-06-28 |
| 11367749 |
Spin orbit torque (SOT) memory devices and their methods of fabrication |
Noriyuki Sato, Angeline Smith, Tanay Gosavi, Sasikanth Manipatruni, Kaan Oguz +7 more |
2022-06-21 |
| 11362263 |
Spin orbit torque (SOT) memory devices and methods of fabrication |
Noriyuki Sato, Tanay Gosavi, Justin S. Brockman, Sasikanth Manipatruni, Kaan Oguz +4 more |
2022-06-14 |
| 11348970 |
Spin orbit torque (SOT) memory device with self-aligned contacts and their methods of fabrication |
Benjamin Buford, Kaan Oguz, Noriyuki Sato, Charles C. Kuo, Mark L. Doczy |
2022-05-31 |
| 11295884 |
Perpendicular STTM multi-layer insert free layer |
Kaan Oguz, Brian S. Doyle, Charles C. Kuo, Mark L. Doczy |
2022-04-05 |
| 11276730 |
Spin orbit torque memory devices and methods of fabrication |
Christopher J. Wiegand, Tofizur Rahman, Noriyuki Sato, Gary Allen, James Pellegren +6 more |
2022-03-15 |
| 11257613 |
Spin orbit torque (SOT) memory devices with enhanced tunnel magnetoresistance ratio and their methods of fabrication |
Kaan Oguz, Tanay Gosavi, Sasikanth Manipatruni, Charles C. Kuo, Mark L. Doczy |
2022-02-22 |
| 11251365 |
High blocking temperature spin orbit torque electrode |
Tanay Gosavi, Sasikanth Manipatruni, Kaan Oguz, Ian A. Young, Gary Allen +1 more |
2022-02-15 |
| 11227644 |
Self-aligned spin orbit torque (SOT) memory devices and their methods of fabrication |
Noriyuki Sato, Kaan Oguz, Mark L. Doczy, Charles C. Kuo |
2022-01-18 |