| 11522011 |
Selector element with ballast for low voltage bipolar memory devices |
Prashant Majhi, Ravi Pillarisetty, Elijah V. Karpov, Abhishek A. Sharma |
2022-12-06 |
$14,727,000 |
| 11488978 |
Ferroelectric gate oxide based tunnel feFET memory |
Prashant Majhi, Ravi Pillarisetty, Abhishek A. Sharma, Elijah V. Karpov |
2022-11-01 |
$18,130,000 |
| 11437567 |
Perpendicular spin transfer torque magnetic mechanism |
Justin S. Brockman, Christopher J. Wiegand, MD Tofizur Rahman, Daniel Ouelette, Angeline Smith +7 more |
2022-09-06 |
$12,766,000 |
| 11417705 |
RRAM memory cell and process to increase RRAM material area in an RRAM memory cell |
Prashant Majhi, Elijah V. Karpov, Ravi Pillarisetty, Ashishek Sharma |
2022-08-16 |
$17,788,000 |
| 11404630 |
Perpendicular spin transfer torque memory (pSTTM) devices with enhanced stability and method to form same |
MD Tofizur Rahman, Christopher J. Wiegand, Kaan Oguz, Justin S. Brockman, Daniel G. Ouellette +5 more |
2022-08-02 |
$13,520,000 |
| 11404639 |
Selector devices with integrated barrier materials |
Elijah V. Karpov, Prashant Majhi, Abhishek A. Sharma, Ravi Pillarisetty |
2022-08-02 |
$13,520,000 |
| 11393526 |
Thin film based 1T-1R cell with resistive random access memory below a bitline |
Ravi Pillarisetty, Elijah V. Karpov, Abhishek A. Sharma, Prashant Majhi |
2022-07-19 |
$11,394,000 |
| 11393874 |
Independently scaling selector and memory in memory cell |
Abhishek A. Sharma, Ravi Pillarisetty, Elijah V. Karpov, Prashant Majhi |
2022-07-19 |
$11,394,000 |
| 11386951 |
Multi-level magnetic tunnel junction (MTJ) devices including mobile magnetic skyrmions or ferromagnetic domains |
Kevin P. O'Brien, Kaan Oguz, Noriyuki Sato, Charles C. Kuo, Mark L. Doczy |
2022-07-12 |
$13,106,000 |
| 11374056 |
Selector devices |
Elijah V. Karpov, Ravi Pillarisetty, Prashant Majhi, Abhishek A. Sharma |
2022-06-28 |
$15,065,000 |
| 11362140 |
Word line with air-gap for non-volatile memories |
Prashant Majhi, Ravi Pillarisetty, Abhishek A. Sharma, Elijah V. Karpov |
2022-06-14 |
$16,878,000 |
| 11342457 |
Strained thin film transistors |
Prashant Majhi, Willy Rachmady, Abhishek A. Sharma, Elijah V. Karpov, Ravi Pillarisetty +1 more |
2022-05-24 |
$18,289,000 |
| 11335705 |
Thin film tunnel field effect transistors having relatively increased width |
Prashant Majhi, Ravi Pillarisetty, Abhishek A. Sharma, Elijah V. Karpov |
2022-05-17 |
$14,251,000 |
| 11295884 |
Perpendicular STTM multi-layer insert free layer |
Kaan Oguz, Kevin P. O'Brien, Charles C. Kuo, Mark L. Doczy |
2022-04-05 |
$18,322,000 |
| 11289509 |
Double-gated ferroelectric field-effect transistor |
Abhishek A. Sharma, Ravi Pillarisetty, Prashant Majhi, Elijah V. Karpov |
2022-03-29 |
$28,068,000 |
| 11250899 |
1S-1T ferroelectric memory |
Abhishek A. Sharma, Ravi Pillarisetty, Prashant Majhi, Elijah V. Karpov |
2022-02-15 |
$14,138,000 |
| 11233040 |
Integration of high density cross-point memory and CMOS logic for high density low latency eNVM and eDRAM applications |
Elijah V. Karpov, Prashant Majhi, Ravi Pillarisetty, Yih Wang |
2022-01-25 |
$21,146,000 |
| 11233090 |
Double selector element for low voltage bipolar memory devices |
Prashant Majhi, Ravi Pillarisetty, Elijah V. Karpov, Abhishek A. Sharma |
2022-01-25 |
$21,146,000 |
| 11222885 |
Backend electrostatic discharge diode apparatus and method of fabricating the same |
Prashant Majhi, Ilya V. Karpov, Ravi Pillarisetty, Abhishek A. Sharma |
2022-01-11 |
$33,310,000 |
