| 11522011 |
Selector element with ballast for low voltage bipolar memory devices |
Ravi Pillarisetty, Elijah V. Karpov, Brian S. Doyle, Abhishek A. Sharma |
2022-12-06 |
| 11488978 |
Ferroelectric gate oxide based tunnel feFET memory |
Brian S. Doyle, Ravi Pillarisetty, Abhishek A. Sharma, Elijah V. Karpov |
2022-11-01 |
| 11430949 |
Metal filament memory cells |
Ravi Pillarisetty, Elijah V. Karpov, Niloy Mukherjee |
2022-08-30 |
| 11417705 |
RRAM memory cell and process to increase RRAM material area in an RRAM memory cell |
Brian S. Doyle, Elijah V. Karpov, Ravi Pillarisetty, Ashishek Sharma |
2022-08-16 |
| 11404639 |
Selector devices with integrated barrier materials |
Elijah V. Karpov, Brian S. Doyle, Abhishek A. Sharma, Ravi Pillarisetty |
2022-08-02 |
| 11393526 |
Thin film based 1T-1R cell with resistive random access memory below a bitline |
Ravi Pillarisetty, Elijah V. Karpov, Abhishek A. Sharma, Brian S. Doyle |
2022-07-19 |
| 11393874 |
Independently scaling selector and memory in memory cell |
Brian S. Doyle, Abhishek A. Sharma, Ravi Pillarisetty, Elijah V. Karpov |
2022-07-19 |
| 11374056 |
Selector devices |
Elijah V. Karpov, Brian S. Doyle, Ravi Pillarisetty, Abhishek A. Sharma |
2022-06-28 |
| 11362140 |
Word line with air-gap for non-volatile memories |
Brian S. Doyle, Ravi Pillarisetty, Abhishek A. Sharma, Elijah V. Karpov |
2022-06-14 |
| 11342457 |
Strained thin film transistors |
Willy Rachmady, Brian S. Doyle, Abhishek A. Sharma, Elijah V. Karpov, Ravi Pillarisetty +1 more |
2022-05-24 |
| 11335705 |
Thin film tunnel field effect transistors having relatively increased width |
Brian S. Doyle, Ravi Pillarisetty, Abhishek A. Sharma, Elijah V. Karpov |
2022-05-17 |
| 11289509 |
Double-gated ferroelectric field-effect transistor |
Abhishek A. Sharma, Brian S. Doyle, Ravi Pillarisetty, Elijah V. Karpov |
2022-03-29 |
| 11250899 |
1S-1T ferroelectric memory |
Abhishek A. Sharma, Brian S. Doyle, Ravi Pillarisetty, Elijah V. Karpov |
2022-02-15 |
| 11233040 |
Integration of high density cross-point memory and CMOS logic for high density low latency eNVM and eDRAM applications |
Elijah V. Karpov, Brian S. Doyle, Ravi Pillarisetty, Yih Wang |
2022-01-25 |
| 11233090 |
Double selector element for low voltage bipolar memory devices |
Ravi Pillarisetty, Elijah V. Karpov, Brian S. Doyle, Abhishek A. Sharma |
2022-01-25 |
| 11222885 |
Backend electrostatic discharge diode apparatus and method of fabricating the same |
Ilya V. Karpov, Brian S. Doyle, Ravi Pillarisetty, Abhishek A. Sharma |
2022-01-11 |