Issued Patents 2022
Showing 1–9 of 9 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 11462678 | Perpendicular spin transfer torque memory (pSTTM) devices with enhanced thermal stability and methods to form the same | Kevin P. O'Brien, Kaan Oguz, Charles C. Kuo, Noriyuki Sato | 2022-10-04 |
| 11437567 | Perpendicular spin transfer torque magnetic mechanism | Justin S. Brockman, Christopher J. Wiegand, MD Tofizur Rahman, Daniel Ouelette, Angeline Smith +7 more | 2022-09-06 |
| 11430943 | Magnetic tunnel junction (MTJ) devices with a synthetic antiferromagnet (SAF) structure including a magnetic skyrmion | Kevin P. O'Brien, Kaan Oguz, Noriyuki Sato, Charles C. Kuo | 2022-08-30 |
| 11404630 | Perpendicular spin transfer torque memory (pSTTM) devices with enhanced stability and method to form same | MD Tofizur Rahman, Christopher J. Wiegand, Kaan Oguz, Justin S. Brockman, Daniel G. Ouellette +5 more | 2022-08-02 |
| 11386951 | Multi-level magnetic tunnel junction (MTJ) devices including mobile magnetic skyrmions or ferromagnetic domains | Kevin P. O'Brien, Brian S. Doyle, Kaan Oguz, Noriyuki Sato, Charles C. Kuo | 2022-07-12 |
| 11348970 | Spin orbit torque (SOT) memory device with self-aligned contacts and their methods of fabrication | Kevin P. O'Brien, Benjamin Buford, Kaan Oguz, Noriyuki Sato, Charles C. Kuo | 2022-05-31 |
| 11295884 | Perpendicular STTM multi-layer insert free layer | Kaan Oguz, Kevin P. O'Brien, Brian S. Doyle, Charles C. Kuo | 2022-04-05 |
| 11257613 | Spin orbit torque (SOT) memory devices with enhanced tunnel magnetoresistance ratio and their methods of fabrication | Kaan Oguz, Tanay Gosavi, Sasikanth Manipatruni, Charles C. Kuo, Kevin P. O'Brien | 2022-02-22 |
| 11227644 | Self-aligned spin orbit torque (SOT) memory devices and their methods of fabrication | Kevin P. O'Brien, Noriyuki Sato, Kaan Oguz, Charles C. Kuo | 2022-01-18 |