Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Multilayer free magnetic layer structure for spin-based magnetic memory

Multilayer free magnetic layer structure for spin-based magnetic memory

US Patent 11430942 · Granted Aug 30, 2022

Estimated economic value: $13,077,000 ⓘ

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Ferroelectrically modulated spin orbit logic device2025
Memory comprising conductive ferroelectric material in series with dielectric ma2025
Doped polar layers and semiconductor device incorporating same2025
Capacitor with dual dielectric layers2025
Asynchronous carry-ripple adder with majority or minority gates2025
Differentially programmable magnetic tunnel junction device and system including2025
Differentially programmable magnetic tunnel junction device and system including2025
Perovskite-based magnetoelectric spin-orbit logic devices2025
Perovskite-based magnetoelectric spin-orbit logic devices2025
Integrating embedded memory with logic interconnects2025
Integrating embedded memory with logic interconnects2025
Method of forming capacitors through wafer bonding2025