Issued Patents 2022
Showing 26–50 of 83 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 11476261 | High-density low voltage non-volatile memory with unidirectional plate-line and bit-line and pillar capacitor | Rajeev Kumar Dokania, Ramamoorthy Ramesh | 2022-10-18 |
| 11476412 | Perpendicular exchange bias with antiferromagnet for spin orbit coupling based memory | Tanay Gosavi, Kaan Oguz, Noriyuki Sato, Kevin P. O'Brien, Benjamin Buford +4 more | 2022-10-18 |
| 11476408 | Spin orbit torque (SOT) memory devices with enhanced magnetic anisotropy and methods of fabrication | Angeline Smith, Christopher J. Wiegand, Tofizur Rahman, Noriyuki Sato, Benjamin Buford | 2022-10-18 |
| 11476260 | High-density low voltage non-volatile memory with unidirectional plate-line and bit-line and pillar capacitor | Rajeev Kumar Dokania, Ramamoorthy Ramesh | 2022-10-18 |
| 11469327 | Doped polar layers and semiconductor device incorporating same | Ramesh Ramamoorthy, Gaurav Thareja | 2022-10-11 |
| 11451232 | Majority logic gate based flip-flop with non-linear polar material | Yuan-Sheng Fang, Robert Menezes, Rajeev Kumar Dokania, Ramamoorthy Ramesh, Amrita Mathuriya | 2022-09-20 |
| 11444237 | Spin orbit torque (SOT) memory devices and methods of fabrication | Noriyuki Sato, Tanay Gosavi, Gary Allen, Kaan Oguz, Kevin P. O'Brien +5 more | 2022-09-13 |
| 11444203 | Doped polar layers and semiconductor device incorporating same | Ramesh Ramamoorthy, Gaurav Thareja | 2022-09-13 |
| 11430861 | Ferroelectric capacitor and method of patterning such | Gaurav Thareja, Rajeev Kumar Dokania, Ramamoorthy Ramesh, Amrita Mathuriya | 2022-08-30 |
| 11430942 | Multilayer free magnetic layer structure for spin-based magnetic memory | Kaan Oguz, Tanay Gosavi, Chia-Ching Lin, Gary Allen | 2022-08-30 |
| 11423967 | Stacked ferroelectric non-planar capacitors in a memory bit-cell | Rajeev Kumar Dokania, Noriyuki Sato, Tanay Gosavi, Pratyush Pandey, Debo Olaosebikan +1 more | 2022-08-23 |
| 11417768 | Doped polar layers and semiconductor device incorporating same | Ramesh Ramamoorthy, Gaurav Thareja | 2022-08-16 |
| 11418197 | Majority logic gate having paraelectric input capacitors and a local conditioning mechanism | Rajeev Kumar Dokania, Amrita Mathuriya, Rafael Rios, Ikenna Odinaka, Robert Menezes +1 more | 2022-08-16 |
| 11416165 | Low synch dedicated accelerator with in-memory computation capability | Amrita Mathuriya, Victor W. Lee, Huseyin Ekin Sumbul, Gregory K. Chen, Raghavan Kumar +4 more | 2022-08-16 |
| 11417830 | Magnetically doped spin orbit torque electrode for perpendicular magnetic random access memory | Tanay Gosavi, Chia-Ching Lin, Gary Allen, Kaan Oguz, Kevin P. O'Brien +3 more | 2022-08-16 |
| 11411116 | Doped polar layers and semiconductor device incorporating same | Ramesh Ramamoorthy, Gaurav Thareja | 2022-08-09 |
| 11410021 | Recurrent neuron implementation based on magneto-electric spin orbit logic | Dmitri E. Nikonov, Ian A. Young | 2022-08-09 |
| 11411046 | Semiconductor device heat extraction by spin thermoelectrics | Tanay Gosavi, Dmitri E. Nikonov, Ian A. Young | 2022-08-09 |
| 11411047 | Stacked transistor bit-cell for magnetic random access memory | Christopher J. Wiegand, Tanay Gosavi, Ian A. Young | 2022-08-09 |
| 11411172 | Magnetoelectric spin orbit logic based full adder | Huichu Liu, Daniel H. Morris, Kaushik Vaidyanathan, Tanay Karnik, Ian A. Young | 2022-08-09 |
| 11398562 | Magnetoelectric spin orbit logic transistor with a spin filter | Chia-Ching Lin, Tanay Gosavi, Sou-Chi Chang, Dmitri E. Nikonov, Ian A. Young | 2022-07-26 |
| 11398596 | Magnetic tunnel junction (MTJ) integration on backside of silicon | Tanay Gosavi, Ian A. Young, Dmitri E. Nikonov | 2022-07-26 |
| 11398570 | Doped polar layers and semiconductor device incorporating same | Ramesh Ramamoorthy, Gaurav Thareja | 2022-07-26 |
| 11394387 | 2-input NAND gate with non-linear input capacitors | Rafael Rios, Neal Reynolds, Ikenna Odinaka, Robert Menezes, Rajeev Kumar Dokania +2 more | 2022-07-19 |
| 11393515 | Transition metal dichalcogenide based spin orbit torque memory device | Chia-Ching Lin, Tanay Gosavi, Dmitri E. Nikonov, Benjamin Buford, Kaan Oguz +2 more | 2022-07-19 |