Issued Patents 2022
Showing 1–10 of 10 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 11522130 | Metal insulator transition field programmable routing block | Uygar E. Avci, Ian A. Young | 2022-12-06 |
| 11502103 | Memory cell with a ferroelectric capacitor integrated with a transtor gate | Seiyon Kim, Uygar E. Avci, Ian A. Young | 2022-11-15 |
| 11495596 | Logic-embedded diode/tunnel diode coupled to floating gate with I-V characteristics suitable for logic state retention | Uygar E. Avci, Ian A. Young | 2022-11-08 |
| 11450675 | One transistor and one ferroelectric capacitor memory cells in diagonal arrangements | Uygar E. Avci, Ian A. Young | 2022-09-20 |
| 11411172 | Magnetoelectric spin orbit logic based full adder | Huichu Liu, Sasikanth Manipatruni, Kaushik Vaidyanathan, Tanay Karnik, Ian A. Young | 2022-08-09 |
| 11387404 | Magnetoelectric spin orbit logic based minority gate | Huichu Liu, Tanay Karnik, Sasikanth Manipatruni, Kaushik Vaidyanathan, Ian A. Young | 2022-07-12 |
| 11355505 | Vertical backend transistor with ferroelectric material | Uygar E. Avci, Ian A. Young | 2022-06-07 |
| 11355504 | Anti-ferroelectric capacitor memory cell | Uygar E. Avci, Ian A. Young | 2022-06-07 |
| 11322504 | Ferroelectric-capacitor integration using novel multi-metal-level interconnect with replaced dielectric for ultra-dense embedded SRAM in state-of-the-art CMOS technology | Uygar E. Avci, Seiyon Kim, Yih Wang, Ruth A. Brain, Ian A. Young | 2022-05-03 |
| 11232832 | Polarization gate stack SRAM | Uygar E. Avci, Ian A. Young | 2022-01-25 |