| 11532734 |
Gate-all-around integrated circuit structures having germanium nanowire channel structures |
Anand S. Murthy, Susmita Ghose, Zachary Geiger |
2022-12-20 |
| 11532706 |
Gate-all-around integrated circuit structures having embedded GeSnB source or drain structures |
Anand S. Murthy, Susmita Ghose, Siddharth Chouksey |
2022-12-20 |
| 11522048 |
Gate-all-around integrated circuit structures having source or drain structures with epitaxial nubs |
Anand S. Murthy, Mark Bohr, Tahir Ghani, Biswajeet Guha |
2022-12-06 |
| 11521968 |
Channel structures with sub-fin dopant diffusion blocking layers |
Anand S. Murthy, Stephen M. Cea, Biswajeet Guha, Anupama Bowonder, Tahir Ghani |
2022-12-06 |
| 11482457 |
Substrate defect blocking layers for strained channel semiconductor devices |
Karthik Jambunathan, Anand S. Murthy |
2022-10-25 |
| 11450739 |
Germanium-rich nanowire transistor with relaxed buffer layer |
Glenn A. Glass, Anand S. Murthy, Tahir Ghani, Jack T. Kavalieros, Siddharth Chouksey +3 more |
2022-09-20 |
| 11430787 |
Forming crystalline source/drain contacts on semiconductor devices |
Karthik Jambunathan, Scott Maddox, Anand S. Murthy |
2022-08-30 |
| 11404575 |
Diverse transistor channel materials enabled by thin, inverse-graded, germanium-based layer |
Karthik Jambunathan, Glenn A. Glass, Anand S. Murthy, Ju H. Nam, Tahir Ghani |
2022-08-02 |
| 11374100 |
Source or drain structures with contact etch stop layer |
Rishabh Mehandru, Anupama Bowonder, Biswajeet Guha, Anand S. Murthy, Tahir Ghani |
2022-06-28 |
| 11328988 |
Top gate recessed channel CMOS thin film transistor in the back end of line and methods of fabrication |
Gilbert Dewey, Ryan Keech, Cheng-Ying Huang, Ashish Agrawal, Willy Rachmady +1 more |
2022-05-10 |
| 11264501 |
Device, method and system for promoting channel stress in a NMOS transistor |
Rishabh Mehandru, Anand S. Murthy, Karthik Jambunathan |
2022-03-01 |
| 11244943 |
Three-dimensional integrated circuits (3DICs) including bottom gate MOS transistors with monocrystalline channel material |
Cheng-Ying Huang, Gilbert Dewey, Ashish Agrawal, Kimin Jun, Willy Rachmady +5 more |
2022-02-08 |
| 11222977 |
Source/drain diffusion barrier for germanium NMOS transistors |
Glenn A. Glass, Anand S. Murthy, Karthik Jambunathan, Tahir Ghani, Jack T. Kavalieros +3 more |
2022-01-11 |