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Channel structures with sub-fin dopant diffusion blocking layers |
Cory Bomberger, Anand S. Murthy, Stephen M. Cea, Biswajeet Guha, Tahir Ghani |
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| 11495683 |
Multiple strain states in epitaxial transistor channel through the incorporation of stress-relief defects within an underlying seed material |
Aaron D. Lilak, Patrick H. Keys, Sayed Hasan, Stephen M. Cea |
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| 11462536 |
Integrated circuit structures having asymmetric source and drain structures |
Rishabh Mehandru, Mark Bohr, Tahir Ghani |
2022-10-04 |
| 11456357 |
Self-aligned gate edge architecture with alternate channel material |
Biswajeet Guha, William Hsu, Szuya S. Liao, Mehmet O. Baykan, Tahir Ghani |
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| 11430868 |
Buried etch-stop layer to help control transistor source/drain depth |
Rishabh Mehandru, Biswajeet Guha, Anand S. Murthy, Tahir Ghani, Stephen M. Cea |
2022-08-30 |
| 11374100 |
Source or drain structures with contact etch stop layer |
Cory Bomberger, Rishabh Mehandru, Biswajeet Guha, Anand S. Murthy, Tahir Ghani |
2022-06-28 |
| 11251302 |
Epitaxial oxide plug for strained transistors |
Karthik Jambunathan, Biswajeet Guha, Anand S. Murthy, Tahir Ghani |
2022-02-15 |