Issued Patents 2022
Showing 1–10 of 10 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 11538905 | Nanowire transistors employing carbon-based layers | Glenn A. Glass, Anand S. Murthy, Nabil G. Mistkawi, Tahir Ghani | 2022-12-27 |
| 11482457 | Substrate defect blocking layers for strained channel semiconductor devices | Cory Bomberger, Anand S. Murthy | 2022-10-25 |
| 11444166 | Backside source/drain replacement for semiconductor devices with metallization on both sides | Glenn A. Glass, Anand S. Murthy, Chandra S. Mohapatra, Patrick Morrow, Mauro J. Kobrinsky | 2022-09-13 |
| 11430787 | Forming crystalline source/drain contacts on semiconductor devices | Scott Maddox, Cory Bomberger, Anand S. Murthy | 2022-08-30 |
| 11411096 | Source electrode and drain electrode protection for nanowire transistors | Biswajeet Guha, Anand S. Murthy, Tahir Ghani | 2022-08-09 |
| 11404575 | Diverse transistor channel materials enabled by thin, inverse-graded, germanium-based layer | Cory Bomberger, Glenn A. Glass, Anand S. Murthy, Ju H. Nam, Tahir Ghani | 2022-08-02 |
| 11335600 | Integration method for finfet with tightly controlled multiple fin heights | Seiyon Kim, Jack T. Kavalieros, Anand S. Murthy, Glenn A. Glass | 2022-05-17 |
| 11264501 | Device, method and system for promoting channel stress in a NMOS transistor | Rishabh Mehandru, Anand S. Murthy, Cory Bomberger | 2022-03-01 |
| 11251302 | Epitaxial oxide plug for strained transistors | Biswajeet Guha, Anupama Bowonder, Anand S. Murthy, Tahir Ghani | 2022-02-15 |
| 11222977 | Source/drain diffusion barrier for germanium NMOS transistors | Glenn A. Glass, Anand S. Murthy, Cory Bomberger, Tahir Ghani, Jack T. Kavalieros +3 more | 2022-01-11 |