| 11538905 |
Nanowire transistors employing carbon-based layers |
Anand S. Murthy, Nabil G. Mistkawi, Karthik Jambunathan, Tahir Ghani |
2022-12-27 |
| 11527612 |
Gate-all-around integrated circuit structures having vertically discrete source or drain structures |
Anand S. Murthy, Biswajeet Guha, Dax M. Crum, Sean T. Ma, Tahir Ghani +3 more |
2022-12-13 |
| 11515407 |
High breakdown voltage structure for high performance GaN-based HEMT and MOS devices to enable GaN C-MOS |
Sansaptak Dasgupta, Han Wui Then, Marko Radosavljevic, Paul B. Fischer, Anand S. Murthy +1 more |
2022-11-29 |
| 11515304 |
Integrated circuit devices with non-collapsed fins and methods of treating the fins to prevent fin collapse |
Nabil G. Mistkawi |
2022-11-29 |
| 11508813 |
Column IV transistors for PMOS integration |
Anand S. Murthy |
2022-11-22 |
| 11482618 |
Methods of forming dislocation enhanced strain in NMOS and PMOS structures |
Michael Jackson, Anand S. Murthy, Saurabh Morarka, Chandra S. Mohapatra |
2022-10-25 |
| 11476344 |
Contact resistance reduction employing germanium overlayer pre-contact metalization |
Anand S. Murthy, Tahir Ghani |
2022-10-18 |
| 11469299 |
Gate-all-around integrated circuit structures having underlying dopant-diffusion blocking layers |
Anand S. Murthy, Biswajeet Guha, Dax M. Crum, Patrick H. Keys, Tahir Ghani +2 more |
2022-10-11 |
| 11450739 |
Germanium-rich nanowire transistor with relaxed buffer layer |
Anand S. Murthy, Cory Bomberger, Tahir Ghani, Jack T. Kavalieros, Siddharth Chouksey +3 more |
2022-09-20 |
| 11450738 |
Source/drain regions in integrated circuit structures |
Sean T. Ma, Anand S. Murthy, Biswajeet Guha |
2022-09-20 |
| 11444166 |
Backside source/drain replacement for semiconductor devices with metallization on both sides |
Karthik Jambunathan, Anand S. Murthy, Chandra S. Mohapatra, Patrick Morrow, Mauro J. Kobrinsky |
2022-09-13 |
| 11437472 |
Integrated circuit structures having germanium-based channels |
Siddharth Chouksey, Anand S. Murthy, Harold W. Kennel, Jack T. Kavalieros, Tahir Ghani +2 more |
2022-09-06 |
| 11417655 |
High-mobility semiconductor source/drain spacer |
Gilbert Dewey, Matthew V. Metz, Anand S. Murthy, Tahir Ghani, Willy Rachmady +2 more |
2022-08-16 |
| 11411110 |
Methods of forming dislocation enhanced strain in NMOS and PMOS structures |
Michael Jackson, Anand S. Murthy, Saurabh Morarka, Chandra S. Mohapatra |
2022-08-09 |
| 11404575 |
Diverse transistor channel materials enabled by thin, inverse-graded, germanium-based layer |
Karthik Jambunathan, Cory Bomberger, Anand S. Murthy, Ju H. Nam, Tahir Ghani |
2022-08-02 |
| 11387320 |
Transistors with high concentration of germanium |
Anand S. Murthy, Tahir Ghani, Ravi Pillarisetty, Niloy Mukherjee, Jack T. Kavalieros +3 more |
2022-07-12 |
| 11335600 |
Integration method for finfet with tightly controlled multiple fin heights |
Seiyon Kim, Jack T. Kavalieros, Anand S. Murthy, Karthik Jambunathan |
2022-05-17 |
| 11296079 |
PMOS and NMOS contacts in common trench |
Anand S. Murthy |
2022-04-05 |
| 11251281 |
Contact resistance reduction employing germanium overlayer pre-contact metalization |
Anand S. Murthy, Tahir Ghani |
2022-02-15 |
| 11232948 |
Layered substrate for microelectronic devices |
Anand S. Murthy |
2022-01-25 |
| 11233148 |
Reducing band-to-band tunneling in semiconductor devices |
Benjamin Chu-Kung, Jack T. Kavalieros, Seung Hoon Sung, Siddharth Chouksey, Harold W. Kennel +4 more |
2022-01-25 |
| 11222977 |
Source/drain diffusion barrier for germanium NMOS transistors |
Anand S. Murthy, Karthik Jambunathan, Cory Bomberger, Tahir Ghani, Jack T. Kavalieros +3 more |
2022-01-11 |