| 11538804 |
Stacked integration of III-N transistors and thin-film transistors |
Han Wui Then, Marko Radosavljevic, Sansaptak Dasgupta, Walid M. Hafez |
2022-12-27 |
| 11527532 |
Enhancement-depletion cascode arrangements for enhancement mode III-N transistors |
Nidhi Nidhi, Han Wui Then, Marko Radosavljevic, Sansaptak Dasgupta, Rahul Ramaswamy +2 more |
2022-12-13 |
| 11521964 |
Schottky diode structures and integration with III-V transistors |
Han Wui Then, Walid M. Hafez, Marko Radosavljevic, Sansaptak Dasgupta |
2022-12-06 |
| 11515407 |
High breakdown voltage structure for high performance GaN-based HEMT and MOS devices to enable GaN C-MOS |
Glenn A. Glass, Sansaptak Dasgupta, Han Wui Then, Marko Radosavljevic, Anand S. Murthy +1 more |
2022-11-29 |
| 11502124 |
Filter-centric III-N films enabling RF filter integration with III-N transistors |
Han Wui Then, Zdravko Boos, Marko Radosavljevic, Sansaptak Dasgupta |
2022-11-15 |
| 11489061 |
Integrated programmable gate radio frequency (RF) switch |
Han Wui Then, Marko Radosavljevic, Sansaptak Dusgupta, Walid M. Hafez |
2022-11-01 |
| 11450617 |
Transmission line structures for III-N devices |
Han Wui Then, Marko Radosavljevic, Sansaptak Dasgupta, Nidhi Nidhi, Rahul Ramaswamy +2 more |
2022-09-20 |
| 11437255 |
Epitaxial III-N nanoribbon structures for device fabrication |
Sansaptak Dasgupta, Marko Radosavljevic, Han Wui Then, Kevin Lin |
2022-09-06 |
| 11430873 |
Self aligned gate connected plates for group III-Nitride devices and methods of fabrication |
Walid M. Hafez, Han Wui Then, Sansaptak Dasgupta, Marko Radosavljevic |
2022-08-30 |
| 11404407 |
Implants to enlarge Schottky diode cross-sectional area for lateral current conduction |
Han Wui Then, Sansaptak Dasgupta, Marko Radosavljevic, Walid M. Hafez |
2022-08-02 |
| 11393777 |
Microelectronic assemblies |
Adel A. Elsherbini, Patrick Morrow, Henning Braunisch, Kimin Jun, Brennen Mueller +2 more |
2022-07-19 |
| 11387329 |
Tri-gate architecture multi-nanowire confined transistor |
Han Wui Then, Marko Radosavljevic, Sansaptak Dasgupta, Walid M. Hafez |
2022-07-12 |
| 11387327 |
Silicide for group III-Nitride devices and methods of fabrication |
Sansaptak Dasgupta, Marko Radosavljevic, Han Wui Then, Walid M. Hafez |
2022-07-12 |
| 11380679 |
FET capacitor circuit architectures for tunable load and input matching |
Han Wui Then, Marko Radosavljevic, Sansaptak Dasgupta, Walid M. Hafez, Nicholas James Harold McKubre |
2022-07-05 |
| 11362082 |
Implanted substrate contact for in-process charging control |
Han Wui Then, Walid M. Hafez, Marko Radosavljevic, Sansaptak Dasgupta |
2022-06-14 |
| 11348897 |
Microelectronic assemblies |
Adel A. Elsherbini, Henning Braunisch, Aleksandar Aleksov, Shawna M. Liff, Johanna M. Swan +3 more |
2022-05-31 |
| 11342232 |
Fabrication of Schottky barrier diode using lateral epitaxial overgrowth |
Sansaptak Dasgupta, Marko Radosavljevic, Han Wui Then, Walid M. Hafez |
2022-05-24 |
| 11335777 |
Integrated circuit components with substrate cavities |
Kevin Lin, Han Wui Then, Sansaptak Dasgupta, Marko Radosavljevic, Ibrahim Ban |
2022-05-17 |
| 11335800 |
Work function based approaches to transistor threshold voltage tuning |
Han Wui Then, Marko Radosavljevic, Sansaptak Dasgupta, Walid M. Hafez |
2022-05-17 |
| 11329132 |
Transistor with polarization layer superlattice for target threshold voltage tuning |
Marko Radosavljevic, Han Wui Then, Sansaptak Dasgupta, Walid M. Hafez |
2022-05-10 |
| 11251156 |
Fabrication and use of through silicon vias on double sided interconnect device |
Brennen Mueller, Patrick Morrow, Kimin Jun, Daniel Pantuso |
2022-02-15 |
| 11218133 |
Film bulk acoustic resonator (FBAR) devices for high frequency RF filters |
Sansaptak Dasgupta, Bruce A. Block, Han Wui Then, Marko Radosavljevic |
2022-01-04 |