Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Backside source/drain replacement for semiconductor devices with metallization on both sides

Backside source/drain replacement for semiconductor devices with metallization on both sides

US Patent 11444166 · Granted Sep 13, 2022

Estimated economic value: $14,653,000 ⓘ

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Double-sided integrated circuit transistor structures with depopulated bottom ch2025
Vertically spaced intra-level interconnect line metallization for integrated cir2025
Vertically spaced intra-level interconnect line metallization for integrated cir2025
Epitaxial source/drain back-side device contact structures with wrap around meta2025
Package architecture of photonic system with vertically stacked dies having plan2025
Integrated circuit structures with backside self-aligned penetrating conductive 2025
Gate-all-around integrated circuit structures having backside contact with enhan2025
Gate-all-around integrated circuit structures having underlying dopant-diffusion2025
Gate-all-around integrated circuit structures having underlying dopant-diffusion2025
Source or drain structures with relatively high germanium content2025
Methods of correlating zones of processing chambers, and related systems and met2025
Integrated circuit devices with angled transistors formed based on angled wafers2025