Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Gate-all-around integrated circuit structures having embedded GeSnB source or drain structures

Gate-all-around integrated circuit structures having embedded GeSnB source or drain structures

US Patent 11532706 · Granted Dec 20, 2022

Estimated economic value: $12,719,000 ⓘ

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Package architecture of photonic system with vertically stacked dies having plan2025
System for replacing elements in content2025
Gate-all-around integrated circuit structures having underlying dopant-diffusion2025
Gate-all-around integrated circuit structures having underlying dopant-diffusion2025
Source or drain structures with relatively high germanium content2025
Source or drain structures with relatively high germanium content2025
Integrated circuit devices with angled transistors formed based on angled wafers2025
Integrated circuit structures having ultra-high conductivity global routing2025
Staircase-based metal-insulator-metal (MIM) capacitors2025
Multi-channel attribution based on timing and number of exposures relative to co2025
Reduced contact resistivity with PMOS germanium and silicon doped with boron gat2025
Reduced contact resistivity with PMOS germanium and silicon doped with boron gat2025