Issued Patents 2020
Showing 251–275 of 332 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 10586858 | Fabrication of vertical field effect transistor structure with strained channels | Juntao Li | 2020-03-10 |
| 10586843 | Tunable on-chip nanosheet resistor | Zhenxing Bi, Wei Wang, Zheng Xu | 2020-03-10 |
| 10586800 | Anti-fuse with reduced programming voltage | Juntao Li, Chengwen Pei, Geng Wang | 2020-03-10 |
| 10586799 | Multiple-bit electrical fuses | Ramachandra Divakaruni | 2020-03-10 |
| 10586741 | Gate height and spacer uniformity | Lawrence A. Clevenger, Balasubramanian S. Pranatharthi Haran, John H. Zhang | 2020-03-10 |
| 10586739 | Self-aligned punch through stopper liner for bulk FinFET | Veeraraghavan S. Basker, Theodorus E. Standaert, Junli Wang | 2020-03-10 |
| 10586737 | Method and structure for forming vertical transistors with shared gates and separate gates | Zhenxing Bi, Juntao Li, Peng Xu | 2020-03-10 |
| 10580692 | Integration of air spacer with self-aligned contact in transistor | Chanro Park, Ruilong Xie, Julien Frougier | 2020-03-03 |
| 10580880 | Replacement metal gate structures | Veeraraghavan S. Basker, Theodorus E. Standaert, Junli Wang | 2020-03-03 |
| 10580855 | High thermal budget compatible punch through stop integration using doped glass | Sanjay C. Mehta, Xin Miao, Chun-Chen Yeh | 2020-03-03 |
| 10580854 | High thermal budget compatible punch through stop integration using doped glass | Sanjay C. Mehta, Xin Miao, Chun-Chen Yeh | 2020-03-03 |
| 10580770 | Vertical transistors with different gate lengths | Xin Miao, Chen Zhang, Juntao Li | 2020-03-03 |
| 10580743 | Prevention of reverse engineering of security chips | Qing Cao, Zhengwen Li, Fei Liu | 2020-03-03 |
| 10580709 | Flipped vertical field-effect-transistor | Xin Miao, Wenyu Xu, Chen Zhang | 2020-03-03 |
| 10580704 | Semiconductor devices with sidewall spacers of equal thickness | Balasubramanian Pranatharthiharan, Soon-Cheon Seo | 2020-03-03 |
| 10573561 | Formation of stacked nanosheet semiconductor devices | Juntao Li, Heng Wu, Peng Xu | 2020-02-25 |
| 10573755 | Nanosheet FET with box isolation on substrate | Julien Frougier, Nicolas Loubet, Ruilong Xie | 2020-02-25 |
| 10573745 | Super long channel device within VFET architecture | Marc A. Bergendahl, Gauri Karve, Fee Li Lie, Eric R. Miller, John R. Sporre +1 more | 2020-02-25 |
| 10573726 | Replacement metal gate structures | Veeraraghavan S. Basker, Theodorus E. Standaert, Junli Wang | 2020-02-25 |
| 10573724 | Contact over active gate employing a stacked spacer | — | 2020-02-25 |
| 10573566 | Fabrication of fin field effect transistor complementary metal-oxide-semiconductor devices with uniform hybrid channels | Zhenxing Bi, Peng Xu, Jie Yang | 2020-02-25 |
| 10573482 | Piezoelectric vacuum transistor | Qing Cao, Zhengwen Li, Fei Liu | 2020-02-25 |
| 10566240 | Wimpy device by selective laser annealing | Nicolas Loubet, Xin Miao, Alexander Reznicek | 2020-02-18 |
| 10566445 | Gate spacer and inner spacer formation for nanosheet transistors having relatively small space between gates | Zhenxing Bi, Nicolas Loubet, Xin Miao, Wenyu Xu, Chen Zhang | 2020-02-18 |
| 10566444 | Vertical fin field effect transistor with a reduced gate-to-bottom source/drain parasitic capacitance | Chen Zhang, Xin Miao, Wenyu Xu | 2020-02-18 |