Issued Patents 2018
Showing 1–25 of 101 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 10164110 | Finfet including improved epitaxial topology | Veeraraghavan S. Basker, Zuoguang Liu, Chun-Chen Yeh | 2018-12-25 |
| 10157798 | Uniform bottom spacers in vertical field effect transistors | Cheng Chi, Min Gyu Sung, Ruilong Xie | 2018-12-18 |
| 10157908 | Electrostatic discharge devices and methods of manufacture | Huiming Bu, Junjun Li, Theodorus E. Standaert | 2018-12-18 |
| 10158003 | Epitaxial and silicide layer formation at top and bottom surfaces of semiconductor fins | Kangguo Cheng, Zuoguang Liu, Ruilong Xie | 2018-12-18 |
| 10158021 | Vertical pillar-type field effect transistor and method | Ruilong Xie, Kangguo Cheng | 2018-12-18 |
| 10153201 | Method for making a dipole-based contact structure to reduce the metal-semiconductor contact resistance in MOSFETs | Huiming Bu, Hui-feng Li, Vijay Narayanan, Hiroaki Niimi | 2018-12-11 |
| 10147815 | Fully silicided linerless middle-of-line (MOL) contact | Joshua M. Rubin | 2018-12-04 |
| 10141308 | Low resistance source/drain contacts for complementary metal oxide semiconductor (CMOS) devices | Praneet Adusumilli, Oleg Gluschenkov, Dechao Guo, Zuoguang Liu, Rajasekhar Venigalla | 2018-11-27 |
| 10134864 | Nanowire semiconductor device including lateral-etch barrier region | Veeraraghavan S. Basker, Zuoguang Liu, Chun-Chen Yeh | 2018-11-20 |
| 10128335 | Nanowire semiconductor device including lateral-etch barrier region | Veeraraghavan S. Basker, Zuoguang Liu, Chun-Chen Yeh | 2018-11-13 |
| 10128377 | Independent gate FinFET with backside gate contact | Terence B. Hook, Joshua M. Rubin | 2018-11-13 |
| 10128347 | Gate-all-around field effect transistor having multiple threshold voltages | Ruqiang Bao, Michael A. Guillorn, Terence B. Hook, Robert R. Robison, Reinaldo Vega | 2018-11-13 |
| 10121877 | Vertical field effect transistor with metallic bottom region | Terence B. Hook, Joshua M. Rubin | 2018-11-06 |
| 10115629 | Air gap spacer formation for nano-scale semiconductor devices | Kangguo Cheng, Thomas J. Haigh, Jr., Juntao Li, Eric G. Liniger, Sanjay C. Mehta +2 more | 2018-10-30 |
| 10109723 | Punch through stopper in bulk FinFET device | Veeraraghavan S. Basker, Zuoguang Liu, Chun-Chen Yeh | 2018-10-23 |
| 10109533 | Nanosheet devices with CMOS epitaxy and method of forming | Ruilong Xie, Cheng Chi, Pietro Montanini, Nicolas Loubet | 2018-10-23 |
| 10103247 | Vertical transistor having buried contact, and contacts using work function metals and silicides | Ruilong Xie, Hui Zang, Kangguo Cheng, Chun-Chen Yeh | 2018-10-16 |
| 10103251 | Punch through stopper in bulk finFET device | Veeraraghavan S. Basker, Zuoguang Liu, Chun-Chen Yeh | 2018-10-16 |
| 10096692 | Vertical field effect transistor with reduced parasitic capacitance | Kangguo Cheng, Ruilong Xie, Chun-Chen Yeh | 2018-10-09 |
| 10096674 | Stacked nanowire device width adjustment by gas cluster ion beam (GCIB) | Kangguo Cheng, Xin Miao, Ruilong Xie | 2018-10-09 |
| 10090410 | Forming a combination of long channel devices and vertical transport fin field effect transistors on the same substrate | Cheng Chi, Chen Zhang | 2018-10-02 |
| 10090165 | Method to improve finFET cut overlay | Effendi Leobandung | 2018-10-02 |
| 10084041 | Method and structure for improving FinFET with epitaxy source/drain | Kangguo Cheng, Ali Khakifirooz, Alexander Reznicek | 2018-09-25 |
| 10084070 | Punch through stopper in bulk finFET device | Veeraraghavan S. Basker, Zuoguang Liu, Chun-Chen Yeh | 2018-09-25 |
| 10079249 | Finfet devices with multiple channel lengths | Effendi Leobandung | 2018-09-18 |