Issued Patents 2018
Showing 25 most recent of 73 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 10164007 | Transistor with improved air spacer | Zhenxing Bi, Kangguo Cheng, Peng Xu | 2018-12-25 |
| 10157935 | Nanosheet capacitor | Kangguo Cheng, Geng Wang, Qintao Zhang | 2018-12-18 |
| 10147679 | Electrical fuse and/or resistor structures | Veeraraghavan S. Basker, Kangguo Cheng, Ali Khakifirooz | 2018-12-04 |
| 10147808 | Techniques for forming vertical tunneling FETS | Kangguo Cheng, Xin Miao, Peng Xu | 2018-12-04 |
| 10147804 | High density vertical nanowire stack for field effect transistor | Kangguo Cheng, Ali Khakifirooz | 2018-12-04 |
| 10141313 | FinFET with uniform shallow trench isolation recess | Zhenxing Bi, Kangguo Cheng, Peng Xu | 2018-11-27 |
| 10141420 | Transistors with dielectric-isolated source and drain regions | Kangguo Cheng, Choonghyun Lee, Peng Xu | 2018-11-27 |
| 10141403 | Integrating thin and thick gate dielectric nanosheet transistors on same chip | Kangguo Cheng, Geng Wang, Qintao Zhang | 2018-11-27 |
| 10141338 | Strained CMOS on strain relaxation buffer substrate | Kangguo Cheng, Balasubramanian Pranatharthiharan | 2018-11-27 |
| 10128235 | Asymmetrical vertical transistor | Zhenxing Bi, Kangguo Cheng, Peng Xu | 2018-11-13 |
| 10128122 | Stacked nanowires | Zhenxing Bi, Kangguo Cheng, Xin Miao | 2018-11-13 |
| 10115629 | Air gap spacer formation for nano-scale semiconductor devices | Kangguo Cheng, Thomas J. Haigh, Jr., Eric G. Liniger, Sanjay C. Mehta, Son V. Nguyen +2 more | 2018-10-30 |
| 10115805 | Extremely thin silicon-on-insulator silicon germanium device without edge strain relaxation | Kangguo Cheng, Zuoguang Liu, Xin Miao | 2018-10-30 |
| 10096698 | Method and structure for forming dielectric isolated FinFET with improved source/drain epitaxy | Kangguo Cheng | 2018-10-09 |
| 10096695 | Closely packed vertical transistors with reduced contact resistance | Zhenxing Bi, Kangguo Cheng, Peng Xu | 2018-10-09 |
| 10096524 | Semiconductor fin patterning techniques to achieve uniform fin profiles for fin field effect transistors | Zhenxing Bi, Kangguo Cheng, Peng Xu | 2018-10-09 |
| 10090293 | Integrated device with P-I-N diodes and vertical field effect transistors | Kangguo Cheng, Geng Wang, Qintao Zhang | 2018-10-02 |
| 10079229 | Resistor fins | Zhenxing Bi, Kangguo Cheng, Peng Xu | 2018-09-18 |
| 10079302 | Silicon germanium fin immune to epitaxy defect | Kangguo Cheng, Xin Miao | 2018-09-18 |
| 10079280 | Asymmetric FET | Kangguo Cheng, Joseph Ervin, Chengwen Pei, Geng Wang | 2018-09-18 |
| 10079304 | Silicon germanium fin immune to epitaxy defect | Kangguo Cheng, Xin Miao | 2018-09-18 |
| 10062615 | Stacked nanowire devices | Kangguo Cheng, Ramachandra Divakaruni | 2018-08-28 |
| 10056255 | Method and structure for forming dielectric isolated FinFET with improved source/drain epitaxy | Kangguo Cheng | 2018-08-21 |
| 10056382 | Modulating transistor performance | Dechao Guo, Sanjay C. Mehta, Robert R. Robison, Huimei Zhou | 2018-08-21 |
| 10043874 | Uniform vertical field effect transistor spacers | Kangguo Cheng | 2018-08-07 |