Issued Patents 2018
Showing 25 most recent of 73 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 10164110 | Finfet including improved epitaxial topology | Zuoguang Liu, Tenko Yamashita, Chun-Chen Yeh | 2018-12-25 |
| 10157912 | CMOS compatible fuse or resistor using self-aligned contacts | Kangguo Cheng, Theodorus E. Standaert, Junli Wang | 2018-12-18 |
| 10157797 | FinFET devices | Kangguo Cheng, Theodorus E. Standaert, Junli Wang | 2018-12-18 |
| 10147679 | Electrical fuse and/or resistor structures | Kangguo Cheng, Ali Khakifirooz, Juntao Li | 2018-12-04 |
| 10141402 | FinFET devices | Kangguo Cheng, Theodorus E. Standaert, Junli Wang | 2018-11-27 |
| 10134864 | Nanowire semiconductor device including lateral-etch barrier region | Zuoguang Liu, Tenko Yamashita, Chun-Chen Yeh | 2018-11-20 |
| 10134763 | Gate top spacer for finFET | Oleg Gluschenkov, Shogo Mochizuki, Alexander Reznicek | 2018-11-20 |
| 10128335 | Nanowire semiconductor device including lateral-etch barrier region | Zuoguang Liu, Tenko Yamashita, Chun-Chen Yeh | 2018-11-13 |
| 10121703 | Contact structure and extension formation for III-V nFET | Alexander Reznicek | 2018-11-06 |
| 10109723 | Punch through stopper in bulk FinFET device | Zuoguang Liu, Tenko Yamashita, Chun-Chen Yeh | 2018-10-23 |
| 10103251 | Punch through stopper in bulk finFET device | Zuoguang Liu, Tenko Yamashita, Chun-Chen Yeh | 2018-10-16 |
| 10096484 | Vertical transistor with a body contact for back-biasing | Kangguo Cheng, Theodorus E. Standaert, Junli Wang | 2018-10-09 |
| 10090197 | Aggressive tip-to-tip scaling using subtractive integration | Wilfried Haensch | 2018-10-02 |
| 10090411 | Air-gap top spacer and self-aligned metal gate for vertical fets | Kangguo Cheng, Theodorus E. Standaert, Junli Wang | 2018-10-02 |
| 10083972 | Hybrid logic and SRAM contacts | Kangguo Cheng, Ali Khakifirooz | 2018-09-25 |
| 10084070 | Punch through stopper in bulk finFET device | Zuoguang Liu, Tenko Yamashita, Chun-Chen Yeh | 2018-09-25 |
| 10079232 | FinFET CMOS with silicon fin n-channel FET and silicon germanium fin p-channel FET | Kangguo Cheng, Theodorus E. Standaert, Junli Wang | 2018-09-18 |
| 10068920 | Silicon germanium fins on insulator formed by lateral recrystallization | Alexander Reznicek, Shogo Mochizuki, Nicolas L. Breil, Oleg Gluschenkov | 2018-09-04 |
| 10062785 | Fin field-effect transistor (FinFET) with reduced parasitic capacitance | Kangguo Cheng, Theodorus E. Standaert, Junli Wang | 2018-08-28 |
| 10056367 | Gate stack integrated metal resistors | Kangguo Cheng, Theodorus E. Standaert, Junli Wang | 2018-08-21 |
| 10056489 | Replacement metal gate structures | Kangguo Cheng, Theodorus E. Standaert, Junli Wang | 2018-08-21 |
| 10056366 | Gate stack integrated metal resistors | Kangguo Cheng, Theodorus E. Standaert, Junli Wang | 2018-08-21 |
| 10049985 | Contact line having insulating spacer therein and method of forming same | Keith H. Tabakman, Patrick Carpenter, Guillaume Bouche, Michael V. Aquilino | 2018-08-14 |
| 10050141 | Precise control of vertical transistor gate length | Kangguo Cheng, Theodorus E. Standaert, Junli Wang | 2018-08-14 |
| 10050121 | Replacement metal gate structures | Kangguo Cheng, Theodorus E. Standaert, Junli Wang | 2018-08-14 |