| 10164060 |
Work function metal fill for replacement gate fin field effect transistor process |
Hong He, Yongan Xu, Yunpeng Yin |
2018-12-25 |
|
| 10157912 |
CMOS compatible fuse or resistor using self-aligned contacts |
Veeraraghavan S. Basker, Kangguo Cheng, Theodorus E. Standaert |
2018-12-18 |
$3,830,000 |
| 10157797 |
FinFET devices |
Veeraraghavan S. Basker, Kangguo Cheng, Theodorus E. Standaert |
2018-12-18 |
$3,830,000 |
| 10147803 |
Work function metal fill for replacement gate fin field effect transistor process |
Hong He, Yongan Xu, Yunpeng Yin |
2018-12-04 |
$4,080,000 |
| 10141402 |
FinFET devices |
Veeraraghavan S. Basker, Kangguo Cheng, Theodorus E. Standaert |
2018-11-27 |
$2,773,000 |
| 10141426 |
Vertical transistor device |
Brent A. Anderson, Huiming Bu, Fee Li Lie, Shogo Mochizuki |
2018-11-27 |
|
| 10103065 |
Gate metal patterning for tight pitch applications |
Shogo Mochizuki, Alexander Reznicek, Joshua M. Rubin |
2018-10-16 |
$2,674,000 |
| 10096484 |
Vertical transistor with a body contact for back-biasing |
Veeraraghavan S. Basker, Kangguo Cheng, Theodorus E. Standaert |
2018-10-09 |
$3,566,000 |
| 10090202 |
Source and drain epitaxial semiconductor material integration for high voltage semiconductor devices |
Balasubramanian Pranatharthiharan, Ruilong Xie |
2018-10-02 |
$3,730,000 |
| 10090411 |
Air-gap top spacer and self-aligned metal gate for vertical fets |
Veeraraghavan S. Basker, Kangguo Cheng, Theodorus E. Standaert |
2018-10-02 |
$3,730,000 |
| 10090302 |
Self-aligned shallow trench isolation and doping for vertical fin transistors |
Brent A. Anderson, Fee Li Lie |
2018-10-02 |
$3,730,000 |
| 10083862 |
Protective liner between a gate dielectric and a gate contact |
Lawrence A. Clevenger, Baozhen Li, Kirk D. Peterson |
2018-09-25 |
$2,527,000 |
| 10084065 |
Reducing resistance of bottom source/drain in vertical channel devices |
Shogo Mochizuki |
2018-09-25 |
$2,527,000 |
| 10079232 |
FinFET CMOS with silicon fin n-channel FET and silicon germanium fin p-channel FET |
Veeraraghavan S. Basker, Kangguo Cheng, Theodorus E. Standaert |
2018-09-18 |
$3,379,000 |
| 10074577 |
Silicon germanium and silicon fins on oxide from bulk wafer |
Hong He, James Kuss, Nicolas Loubet |
2018-09-11 |
$4,894,000 |
| 10068807 |
Uniform shallow trench isolation |
Kangguo Cheng, Peng Xu, Chen Zhang |
2018-09-04 |
$2,923,000 |
| 10068970 |
Nanowire isolation scheme to reduce parasitic capacitance |
Kangguo Cheng, Bruce B. Doris |
2018-09-04 |
$2,923,000 |
| 10062785 |
Fin field-effect transistor (FinFET) with reduced parasitic capacitance |
Veeraraghavan S. Basker, Kangguo Cheng, Theodorus E. Standaert |
2018-08-28 |
$3,847,000 |
| 10062783 |
Silicon germanium fin channel formation |
Hong He, Nicolas Loubet |
2018-08-28 |
$3,847,000 |
| 10056366 |
Gate stack integrated metal resistors |
Veeraraghavan S. Basker, Kangguo Cheng, Theodorus E. Standaert |
2018-08-21 |
$2,787,000 |
| 10056367 |
Gate stack integrated metal resistors |
Veeraraghavan S. Basker, Kangguo Cheng, Theodorus E. Standaert |
2018-08-21 |
$2,787,000 |
| 10056489 |
Replacement metal gate structures |
Veeraraghavan S. Basker, Kangguo Cheng, Theodorus E. Standaert |
2018-08-21 |
$2,787,000 |
| 10050141 |
Precise control of vertical transistor gate length |
Veeraraghavan S. Basker, Kangguo Cheng, Theodorus E. Standaert |
2018-08-14 |
$4,051,000 |
| 10050121 |
Replacement metal gate structures |
Veeraraghavan S. Basker, Kangguo Cheng, Theodorus E. Standaert |
2018-08-14 |
$4,051,000 |
| 10043747 |
Vertical fuse structures |
Juntao Li, Chih-Chao Yang |
2018-08-07 |
$1,950,000 |
