Issued Patents 2018
Showing 25 most recent of 50 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 10157832 | Integrated circuit structure including via interconnect structure abutting lateral ends of metal lines and methods of forming same | John H. Zhang, Carl Radens | 2018-12-18 |
| 10153202 | Neutral atom beam nitridation for copper interconnect | Benjamin D. Briggs, Michael Rizzolo, Chih-Chao Yang | 2018-12-11 |
| 10150323 | Structure, system, method, and recording medium of implementing a directed self-assembled security pattern | Benjamin D. Briggs, Bartlet H. DeProspo, Michael Rizzolo | 2018-12-11 |
| 10128147 | Interconnect structure | Roger A. Quon, Terry A. Spooner, Wei Wang, Chih-Chao Yang | 2018-11-13 |
| 10121661 | Self aligned pattern formation post spacer etchback in tight pitch configurations | Sean D. Burns, Matthew E. Colburn, Nelson Felix, Sivananda K. Kanakasabapathy, Christopher J. Penny +2 more | 2018-11-06 |
| 10115633 | Method for producing self-aligned line end vias and related device | John H. Zhang, Carl Radens | 2018-10-30 |
| 10109579 | Semiconductor device including a porous dielectric layer, and method of forming the semiconductor device | Benjamin D. Briggs, Bartlet H. DeProspo, Huai Huang, Christopher J. Penny, Michael Rizzolo | 2018-10-23 |
| 10099108 | Dynamic rigidity mechanism | Benjamin D. Briggs, Bartlet H. DeProspo, Michael Rizzolo | 2018-10-16 |
| 10083862 | Protective liner between a gate dielectric and a gate contact | Baozhen Li, Kirk D. Peterson, Junli Wang | 2018-09-25 |
| 10083905 | Skip-vias bypassing a metallization level at minimum pitch | Benjamin D. Briggs, Bartlet H. DeProspo, Huai Huang, Christopher J. Penny, Michael Rizzolo | 2018-09-25 |
| 10083864 | Self aligned conductive lines with relaxed overlay | Sean D. Burns, Matthew E. Colburn, Sivananda K. Kanakasabapathy, Yann Mignot, Christopher J. Penny +2 more | 2018-09-25 |
| 10083272 | Integrated circuit design layout optimizer based on process variation and failure mechanism | Jason D. Hibbeler, Dongbing Shao, Robert C. Wong | 2018-09-25 |
| 10068846 | Surface nitridation in metal interconnects | Roger A. Quon, Terry A. Spooner, Wei Wang, Chih-Chao Yang | 2018-09-04 |
| 10056290 | Self-aligned pattern formation for a semiconductor device | Sean D. Burns, Nelson Felix, Sivananda K. Kanakasabapathy, Christopher J. Penny, Nicole Saulnier | 2018-08-21 |
| 10046698 | Smartwatch blackbox | Benjamin D. Briggs, Leigh Anne H. Clevenger, Jonathan H. Connell, II, Nalini K. Ratha, Michael Rizzolo | 2018-08-14 |
| 10046601 | Smartwatch blackbox | Benjamin D. Briggs, Leigh Anne H. Clevenger, Jonathan H. Connell, II, Nalini K. Ratha, Michael Rizzolo | 2018-08-14 |
| 10045096 | Social media modification of behavior and mobile screening for impairment | Benjamin D. Briggs, Leigh Anne H. Clevenger, Jonathan H. Connell, II, Nalini K. Ratha, Michael Rizzolo | 2018-08-07 |
| 10026849 | Structure and process for overturned thin film device with self-aligned gate and S/D contacts | Carl Radens, Yiheng Xu, John H. Zhang | 2018-07-17 |
| 10014255 | Contacts having a geometry to reduce resistance | Baozhen Li, Kirk D. Peterson, Terry A. Spooner, Junli Wang | 2018-07-03 |
| 10002762 | Multi-angled deposition and masking for custom spacer trim and selected spacer removal | Marc A. Bergendahl, Sean D. Burns, Christopher J. Penny, Michael Rizzolo | 2018-06-19 |
| 9997408 | Method of optimizing wire RC for device performance and reliability | Baozhen Li, Kirk D. Peterson, John E. Sheets, II, Terry A. Spooner | 2018-06-12 |
| 9997451 | Semiconductor device including a porous dielectric layer, and method of forming the semiconductor device | Benjamin D. Briggs, Bartlet H. DeProspo, Huai Huang, Christopher J. Penny, Michael Rizzolo | 2018-06-12 |
| 9991156 | Self-aligned quadruple patterning (SAQP) for routing layouts including multi-track jogs | Sean D. Burns, Matthew E. Colburn, Sivananda K. Kanakasabapathy, Yann Mignot, Christopher J. Penny +2 more | 2018-06-05 |
| 9984935 | Uniform dielectric recess depth during fin reveal | Benjamin D. Briggs, Michael Rizzolo, Jay William Strane | 2018-05-29 |
| 9984916 | Uniform dielectric recess depth during fin reveal | Benjamin D. Briggs, Michael Rizzolo, Jay William Strane | 2018-05-29 |