Issued Patents 2018
Showing 1–25 of 34 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 10163721 | Hybridization fin reveal for uniform fin reveal depth across different fin pitches | Zhenxing Bi, Donald F. Canaperi, Thamarai S. Devarajan, Fee Li Lie, Peng Xu | 2018-12-25 |
| 10157745 | High aspect ratio gates | Kangguo Cheng, Peng Xu | 2018-12-18 |
| 10134595 | High aspect ratio gates | Kangguo Cheng, Peng Xu | 2018-11-20 |
| 10121785 | Pitch scalable active area patterning structure and process for multi-channel fin FET technologies | Fee Li Lie, Eric R. Miller, Stuart A. Sieg | 2018-11-06 |
| 10121661 | Self aligned pattern formation post spacer etchback in tight pitch configurations | Sean D. Burns, Lawrence A. Clevenger, Matthew E. Colburn, Nelson Felix, Christopher J. Penny +2 more | 2018-11-06 |
| 10121853 | Structure and process to tuck fin tips self-aligned to gates | Bruce B. Doris, Hong He, Gauri Karve, Fee Li Lie, Derrick Liu +2 more | 2018-11-06 |
| 10121852 | Structure and process to tuck fin tips self-aligned to gates | Bruce B. Doris, Hong He, Gauri Karve, Fee Li Lie, Derrick Liu +2 more | 2018-11-06 |
| 10115724 | Double diffusion break gate structure without vestigial antenna capacitance | Alexander Reznicek | 2018-10-30 |
| 10083864 | Self aligned conductive lines with relaxed overlay | Sean D. Burns, Lawrence A. Clevenger, Matthew E. Colburn, Yann Mignot, Christopher J. Penny +2 more | 2018-09-25 |
| 10083964 | Double diffusion break gate structure without vestigial antenna capacitance | Alexander Reznicek | 2018-09-25 |
| 10079148 | Material removal process for self-aligned contacts | Ahmet S. Ozcan | 2018-09-18 |
| 10056290 | Self-aligned pattern formation for a semiconductor device | Sean D. Burns, Lawrence A. Clevenger, Nelson Felix, Christopher J. Penny, Nicole Saulnier | 2018-08-21 |
| 10050039 | Semiconductor structures with deep trench capacitor and methods of manufacture | Kevin K. Chan, Babar A. Khan, Masaharu Kobayashi, Effendi Leobandung, Theodorus E. Standaert +1 more | 2018-08-14 |
| 10042968 | Semiconductor structures with deep trench capacitor and methods of manufacture | Kevin K. Chan, Babar A. Khan, Masaharu Kobayashi, Effendi Leobandung, Theodorus E. Standaert +1 more | 2018-08-07 |
| 10043760 | Registration mark formation during sidewall image transfer process | David J. Conklin, Allen H. Gabor, Byeong Y. Kim, Fee Li Lie, Stuart A. Sieg | 2018-08-07 |
| 10032680 | Strained finFET device fabrication | Bruce B. Doris, Hong He, Gauri Karve, Fee Li Lie, Stuart A. Sieg | 2018-07-24 |
| 9997419 | Confined eptaxial growth for continued pitch scaling | Balasubramanian Pranatharthiharan | 2018-06-12 |
| 9991156 | Self-aligned quadruple patterning (SAQP) for routing layouts including multi-track jogs | Sean D. Burns, Lawrence A. Clevenger, Matthew E. Colburn, Yann Mignot, Christopher J. Penny +2 more | 2018-06-05 |
| 9985109 | FinFET with reduced parasitic capacitance | Emre Alptekin, Veeraraghavan S. Basker | 2018-05-29 |
| 9985027 | Stable multiple threshold voltage devices on replacement metal gate CMOS devices | Su Chen Fan, Injo Ok, Tenko Yamashita | 2018-05-29 |
| 9978748 | Method of cutting fins to create diffusion breaks for finFETs | Hemanth Jagannathan, Alexander Reznicek | 2018-05-22 |
| 9972533 | Aligning conductive vias with trenches | Sean D. Burns, Lawrence A. Clevenger, Matthew E. Colburn, Yann Mignot, Christopher J. Penny +2 more | 2018-05-15 |
| 9941142 | Tunable TiOxNy hardmask for multilayer patterning | Abraham Arceo de la Pena, Ekmini Anuja De Silva, Nelson Felix | 2018-04-10 |
| 9935015 | Hybridization fin reveal for uniform fin reveal depth across different fin pitches | Zhenxing Bi, Donald F. Canaperi, Thamarai S. Devarajan, Fee Li Lie, Peng Xu | 2018-04-03 |
| 9934970 | Self aligned pattern formation post spacer etchback in tight pitch configurations | Sean D. Burns, Lawrence A. Clevenger, Matthew E. Colburn, Nelson Felix, Christopher J. Penny +2 more | 2018-04-03 |