Issued Patents 2018
Showing 1–25 of 71 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 10141277 | Monolithic decoupling capacitor between solder bumps | — | 2018-11-27 |
| 10141719 | Resonant cavity strained group III-V photodetector and LED on silicon substrate and method to fabricate same | Cheng-Wei Cheng, Ning Li, Devendra K. Sadana, Kuen-Ting Shiu | 2018-11-27 |
| 10141048 | Stack capacitor for neural network | — | 2018-11-27 |
| 10135226 | Resonant cavity strained Group III-V photodetector and LED on silicon substrate and method to fabricate same | Cheng-Wei Cheng, Ning Li, Devendra K. Sadana, Kuen-Ting Shiu | 2018-11-20 |
| 10134472 | Floating gate architecture for deep neural network application | Yulong Li, Paul M. Solomon, Chun-Chen Yeh | 2018-11-20 |
| 10128199 | Interchip backside connection | — | 2018-11-13 |
| 10122153 | Resonant cavity strained group III-V photodetector and LED on silicon substrate and method to fabricate same | Cheng-Wei Cheng, Ning Li, Devendra K. Sadana, Kuen-Ting Shiu | 2018-11-06 |
| 10109575 | Non-planar metal-insulator-metal capacitor formation | — | 2018-10-23 |
| 10103218 | Densely stacked metal-insulator-metal capacitor and method of forming the same | — | 2018-10-16 |
| 10103237 | Inverted MOSFET with scaling advantage | — | 2018-10-16 |
| 10103242 | Growing groups III-V lateral nanowire channels | Sanghoon Lee, Renee T. Mo, Brent A. Wacaser | 2018-10-16 |
| 10096975 | Laterally grown edge emitting laser | Ning Li | 2018-10-09 |
| 10096689 | Low end parasitic capacitance FinFET | — | 2018-10-09 |
| 10096697 | III-V FIN generation by lateral growth on silicon sidewall | Sanghoon Lee, Brent A. Wacaser, Devendra K. Sadana | 2018-10-09 |
| 10090429 | Integrated on chip detector and zero waveguide module structure for use in DNA sequencing | — | 2018-10-02 |
| 10090562 | Thin film lithium ion battery | Ghavam G. Shahidi | 2018-10-02 |
| 10090340 | Optoelectronic devices with back contact | Ning Li, Tak H. Ning, Jean-Olivier Plouchart, Devendra K. Sadana | 2018-10-02 |
| 10090165 | Method to improve finFET cut overlay | Tenko Yamashita | 2018-10-02 |
| 10083987 | CMOS with middle of line processing of III-V material on mandrel | Cheng-Wei Cheng, Sanghoon Lee, Renee T. Mo | 2018-09-25 |
| 10083986 | CMOS with middle of line processing of III-V material on mandrel | Cheng-Wei Cheng, Sanghoon Lee, Renee T. Mo | 2018-09-25 |
| 10079249 | Finfet devices with multiple channel lengths | Tenko Yamashita | 2018-09-18 |
| 10079234 | Metal-insulator-metal capacitor analog memory unit cell | Yulong Li, Paul M. Solomon, Chun-Chen Yeh | 2018-09-18 |
| 10068994 | III-V fin generation by lateral growth on silicon sidewall | Sanghoon Lee, Brent A. Wacaser, Devendra K. Sadana | 2018-09-04 |
| 10068967 | Self-forming spacers using oxidation | Kevin K. Chan, Masaharu Kobayashi | 2018-09-04 |
| 10068922 | FinFET devices with multiple channel lengths | Tenko Yamashita | 2018-09-04 |