| 10147680 |
Method to reduce variability in contact resistance |
Praneet Adusumilli, Christian Lavoie, Jean L. Sweet |
2018-12-04 |
| 10128372 |
Bottom contact resistance reduction on VFET |
Ruqiang Bao, Choonghyun Lee, Shogo Mochizuki |
2018-11-13 |
| 10096713 |
FinFET with sigma recessed source/drain and un-doped buffer layer epitaxy for uniform junction formation |
Dechao Guo, Shogo Mochizuki, Gen Tsutsui, Chun-Chen Yeh |
2018-10-09 |
| 10090378 |
Efficient metal-insulator-metal capacitor |
Kisup Chung, Isabel C. Estrada-Raygoza, Chi-Chun Liu, Yann Mignot, Hao Tang |
2018-10-02 |
| 10084055 |
Uniform threshold voltage for nanosheet devices |
Ruqiang Bao, Paul C. Jamison, Choonghyun Lee, Vijay Narayanan, Koji Watanabe |
2018-09-25 |
| 10084082 |
Bottom contact resistance reduction on VFET |
Ruqiang Bao, Choonghyun Lee, Shogo Mochizuki |
2018-09-25 |
| 10079233 |
Semiconductor device and method of forming the semiconductor device |
Robin Hsin Kuo Chao, Choonghyun Lee, Chun Wing Yeung, Jingyun Zhang |
2018-09-18 |
| 10056484 |
VTFET devices utilizing low temperature selective epitaxy |
Shogo Mochizuki |
2018-08-21 |
| 10020359 |
Leakage current reduction in stacked metal-insulator-metal capacitors |
Takashi Ando, Paul C. Jamison, John Rozen |
2018-07-10 |
| 10008386 |
Formation of pure silicon oxide interfacial layer on silicon-germanium channel field effect transistor device |
Takashi Ando, Pouya Hashemi, Choonghyun Lee, Vijay Narayanan |
2018-06-26 |
| 10002791 |
Multi-layer work function metal gates with similar gate thickness to achieve multi-Vt for vFETS |
Ruqiang Bao, Paul C. Jamison, Choonghyun Lee |
2018-06-19 |
| 9984263 |
Simplified gate stack process to improve dual channel CMOS performance |
Choonghyun Lee, Richard Southwick |
2018-05-29 |
| 9978748 |
Method of cutting fins to create diffusion breaks for finFETs |
Sivananda K. Kanakasabapathy, Alexander Reznicek |
2018-05-22 |
| 9960272 |
Bottom contact resistance reduction on VFET |
Ruqiang Bao, Choonghyun Lee, Shogo Mochizuki |
2018-05-01 |
| 9954106 |
III-V fin on insulator |
Kangguo Cheng, Alexander Reznicek |
2018-04-24 |
| 9941371 |
Selective thickening of pFET dielectric |
Takashi Ando, Barry P. Linder |
2018-04-10 |
| 9917089 |
III-V semiconductor CMOS FinFET device |
Alexander Reznicek, Devendra K. Sadana, Charan V. Surisetty |
2018-03-13 |
| 9881797 |
Replacement gate electrode with multi-thickness conductive metallic nitride layers |
Vamsi K. Paruchuri |
2018-01-30 |
| 9876091 |
Divot-free planarization dielectric layer for replacement gate |
Sanjay C. Mehta |
2018-01-23 |
| 9865730 |
VTFET devices utilizing low temperature selective epitaxy |
Shogo Mochizuki |
2018-01-09 |
| 9865703 |
High-K layer chamfering to prevent oxygen ingress in replacement metal gate (RMG) process |
Takashi Ando, Veeraraghavan S. Basker, Johnathan E. Faltermeier, Tenko Yamashita |
2018-01-09 |
