| 10153201 |
Method for making a dipole-based contact structure to reduce the metal-semiconductor contact resistance in MOSFETs |
Huiming Bu, Hui-feng Li, Hiroaki Niimi, Tenko Yamashita |
2018-12-11 |
| 10147782 |
Tapered metal nitride structure |
Martin M. Frank, Hiroyuki Miyazoe |
2018-12-04 |
| 10084055 |
Uniform threshold voltage for nanosheet devices |
Ruqiang Bao, Hemanth Jagannathan, Paul C. Jamison, Choonghyun Lee, Koji Watanabe |
2018-09-25 |
| 10079182 |
Field effect transistor gate stack |
Ruqiang Bao, Siddarth A. Krishnan, Unoh Kwon |
2018-09-18 |
| 10062694 |
Patterned gate dielectrics for III-V-based CMOS circuits |
Takashi Ando, Martin M. Frank, Renee T. Mo, John Rozen |
2018-08-28 |
| 10062693 |
Patterned gate dielectrics for III-V-based CMOS circuits |
Takashi Ando, Martin M. Frank, Renee T. Mo, John Rozen |
2018-08-28 |
| 10026041 |
Interoperable machine learning platform |
Sudarshan Raghunathan, Akshaya Annavajhala |
2018-07-17 |
| 10008386 |
Formation of pure silicon oxide interfacial layer on silicon-germanium channel field effect transistor device |
Takashi Ando, Pouya Hashemi, Hemanth Jagannathan, Choonghyun Lee |
2018-06-26 |
| 10002871 |
High-K gate dielectric and metal gate conductor stack for fin-type field effect transistors formed on type III-V semiconductor material and silicon germanium semiconductor material |
Takashi Ando, Martin M. Frank, Pranita Kerber |
2018-06-19 |
| 10002937 |
Shared metal gate stack with tunable work function |
Ruqiang Bao, Siddarth A. Krishnan, Unoh Kwon |
2018-06-19 |
| 9997519 |
Dual channel structures with multiple threshold voltages |
Ruqiang Bao, Michael A. Guillorn |
2018-06-12 |
| 9985206 |
Resistive switching memory stack for three-dimensional structure |
Takashi Ando, John Rozen |
2018-05-29 |
| 9984870 |
Combined reactive gas species for high-mobility channel passivation |
Takashi Ando, Yohei Ogawa, John Rozen |
2018-05-29 |
| 9984940 |
Selective and conformal passivation layer for 3D high-mobility channel devices |
Jack O. Chu, Stephen M. Gates, Masanobu Hatanaka, Deborah A. Neumayer, Yohei Ogawa +1 more |
2018-05-29 |
| 9972695 |
Binary metal oxide based interlayer for high mobility channels |
Yohei Ogawa, John Rozen |
2018-05-15 |
| 9972697 |
Method to improve reliability of replacement gate device |
Takashi Ando, Eduard A. Cartier, Kisik Choi |
2018-05-15 |
| 9960252 |
Method to improve reliability of replacement gate device |
Takashi Ando, Eduard A. Cartier, Kisik Choi |
2018-05-01 |
| 9960233 |
Expitaxially regrown heterostructure nanowire lateral tunnel field effect transistor |
Siddarth A. Krishnan, Unoh Kwon, Jeffrey W. Sleight |
2018-05-01 |
| 9941282 |
Integrated metal gate CMOS devices |
Ruqiang Bao, Dechao Guo |
2018-04-10 |
| 9911597 |
Trench metal insulator metal capacitor with oxygen gettering layer |
Takashi Ando, Eduard A. Cartier, Michael P. Chudzik, Aritra Dasgupta, Herbert L. Ho +3 more |
2018-03-06 |
| 9899264 |
Integrated metal gate CMOS devices |
Ruqiang Bao, Dechao Guo |
2018-02-20 |
| 9859279 |
High-k gate dielectric and metal gate conductor stack for fin-type field effect transistors formed on type III-V semiconductor material and silicon germanium semiconductor material |
Takashi Ando, Martin M. Frank, Pranita Kerber |
2018-01-02 |
| 9859169 |
Field effect transistor stack with tunable work function |
Ruqiang Bao, Siddarth A. Krishnan, Unoh Kwon |
2018-01-02 |
